| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1103 | 2018 |
| A study of dislocations in AlN and GaN films grown on sapphire substrates J Bai, T Wang, PJ Parbrook, KB Lee, AG Cullis Journal of crystal growth 282 (3), 290-296, 2005 | 104 | 2005 |
| III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same L Yuan, PGQ Lo, H Sun, KB Lee, W Wang, SL Selvaraj US Patent 20,150,255,547, 2015 | 51 | 2015 |
| Optical investigation of exciton localization in AlxGa1-xN KB Lee, PJ Parbrook, T Wang, F Ranalli, T Martin, RS Balmer, DJ Wallis Journal of Applied Physics 101 (5), 3513, 2007 | 46 | 2007 |
| Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer T Wang, KB Lee, J Bai, PJ Parbrook, RJ Airey, Q Wang, G Hill, F Ranalli, ... Applied physics letters 89 (8), 1126, 2006 | 42 | 2006 |
| The origin of the high ideality factor in AlGaN‐based quantum well ultraviolet light emitting diodes KB Lee, PJ Parbrook, T Wang, J Bai, F Ranalli, RJ Airey, G Hill physica status solidi (b) 247 (7), 1761-1763, 2010 | 37 | 2010 |
| InGaN/GaN quantum wells with low growth temperature GaN cap layers ST Pendlebury, PJ Parbrook, DJ Mowbray, DA Wood, KB Lee Journal of Crystal Growth 307 (2), 363-366, 2007 | 37 | 2007 |
| Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers FS Choi, JT Griffiths, C Ren, KB Lee, ZH Zaidi, PA Houston, I Guiney, ... Journal of Applied Physics 124 (5), 055702, 2018 | 34 | 2018 |
| All-GaN Integrated Cascode Heterojunction Field Effect Transistors S Jiang, KB Lee, I Guiney, PF Miaja, ZH Zaidi, H Qian, DJ Wallis, ... IEEE Transactions on Power Electronics, 2017 | 30 | 2017 |
| Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes KB Lee, PJ Parbrook, T Wang, J Bai, F Ranalli, RJ Airey, G Hill Journal of Crystal Growth 311 (10), 2857-2859, 2009 | 28 | 2009 |
| High-Performance Enhancement-Mode p-channel GaN MISFETs with Steep Subthreshold Swing Y Yin, KB Lee IEEE Electron Device Letters, 2022 | 25 | 2022 |
| Interface State Artefact in Long Gate-Length AlGaN/GaN HEMTs WM Waller, S Karboyan, MJ Uren, KB Lee, P Houston, DJ Wallis, I Guiney, ... IEEE, 2015 | 24 | 2015 |
| Enhancement mode operation in AlInN/GaN (MIS) HEMTs on Si substrates using a fluorine implant ZH Zaidi, KB Lee, I Guiney, H Qian, S Jiang, DJ Wallis, CJ Humphreys, ... Semiconductor Science and Technology 30 (10), 105007, 2015 | 23 | 2015 |
| Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer … JW Roberts, PR Chalker, KB Lee, PA Houston, SJ Cho, IG Thayne, ... Applied Physics Letters 108 (7), 072901, 2016 | 20 | 2016 |
| Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer J Bai, T Wang, PJ Parbrook, Q Wang, KB Lee, AG Cullis Applied Physics Letters 91 (13), 131903, 2007 | 20 | 2007 |
| Exploring an Approach toward the Intrinsic Limits of GaN Electronics S Jiang, Y Cai, P Feng, S Shen, X Zhao, P Fletcher, V Esendag, KB Lee, ... ACS applied materials & interfaces 12 (11), 12949-12954, 2020 | 16 | 2020 |
| Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth H Qian, KB Lee, SH Vajargah, SV Novikov, I Guiney, ZH Zaidi, S Jiang, ... Journal of Crystal Growth 459, 185-188, 2017 | 16 | 2017 |
| Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of+ 3.0 V and blocking voltage above 1000 V KB Lee, I Guiney, S Jiang, ZH Zaidi, H Qian, DJ Wallis, MJ Uren, M Kuball, ... Applied Physics Express 8 (3), 036502, 2015 | 16 | 2015 |
| Analysis of gain variation with changing supply voltages in GaN HEMTs for envelope tracking power amplifiers A Alt, H Hirshy, S Jiang, KB Lee, MA Casbon, P Chen, PA Houston, ... IEEE Transactions on Microwave Theory and Techniques 67 (7), 2495-2504, 2019 | 15 | 2019 |
| Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices Y Cai, Y Gong, J Bai, X Yu, C Zhu, V Esendag, KB Lee, T Wang IEEE Photonics Journal 10 (5), 1-7, 2018 | 14 | 2018 |
