| Impact of RTN on Pattern Recognition Accuracy of RRAM-based Synaptic Neural Network Z Chai, P Freitas, W Zhang, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters, 2018 | 50 | 2018 |
| Endurance improvement of more than five orders in GexSe1-x OTS selectors by using a novel refreshing program scheme F Hatem, Z Chai, W Zhang, A Fantini, R Degraeve, S Clima, D Garbin, ... IEEE International Electron Device Meeting (IEDM), San Francisco, USA, Dec. 2019, 2019 | 31 | 2019 |
| Evidence of filamentary switching and relaxation mechanisms in GexSe1-x OTS selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... 2019 Symposia on VLSI Technology and Circuits (VLSI), Kyoto, Japan., 2019 | 31 | 2019 |
| Dependence of switching probability on operation conditions in GexSe1-x ovonic threshold switching selectors Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang, P Freitas, ... IEEE Electron Device Letters, 2019 | 30 | 2019 |
| Modeling of bipolar resistive switching of a nonlinear MISM memristor FO Hatem, PWC Ho, TN Kumar, HAF Almurib Semiconductor Science and Technology 30 (11), 115009, 2015 | 25 | 2015 |
| GeSe-based ovonic threshold switching volatile true random number generator Z Chai, W Shao, W Zhang, J Brown, R Degraeve, FD Salim, S Clima, ... IEEE Electron Device Letters 41 (2), 228-231, 2019 | 24 | 2019 |
| A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM FO Hatem, TN Kumar, HAF Almurib IEEE International Symposium on Circuits & Systems, Baltimore, Maryland, USA, 2017 | 22* | 2017 |
| A SPICE Model of the Ta2O5/TaOx Bi-Layered RRAM FO Hatem, TN Kumar, HAF Almurib IEEE Transactions on Circuits and Systems I: Regular Papers 63 (9), 1487-1498, 2016 | 22* | 2016 |
| Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices PWC Ho, FO Hatem, HAF Almurib, TN Kumar Journal of Semiconductors 37 (6), 064001-1 - 064001-13, 2016 | 21 | 2016 |
| Enhanced SPICE memristor model with dynamic ground PWC Ho, FO Hatem, HAF Almurib, TN Kumar 2015 IEEE International Circuits and Systems Symposium (ICSyS), 130-132, 2015 | 21 | 2015 |
| The over-reset phenomenon in Ta2O5 RRAM device investigated by the RTN-based defect probing technique Z Chai, W Zhang, P Freitas, F Hatem, JF Zhang, J Marsland, B Govoreanu, ... IEEE Electron Device Letters, 2018 | 18 | 2018 |
| Cycling induced metastable degradation in GeSe Ovonic threshold switching selector Z Chai, W Zhang, S Clima, F Hatem, R Degraeve, Q Diao, JF Zhang, ... IEEE Electron Device Letters 42 (10), 1448-1451, 2021 | 15 | 2021 |
| Endurance improvement of more than five orders in Ge F Hatem, JF Zhang, J Marsland, P Freitas, L Goux, GS Kar IEDM Tech. Dig 35, 1-35.2, 2019 | 10 | 2019 |
| Evidence of filamentary switching and relaxation mechanisms in Ge Z Chai, W Zhang, R Degraeve, S Clima, F Hatem, JF Zhang Proc. Symp. VLSI Technol, T238-T239, 0 | 9 | |
| Comparison on TiO2 and TaO2 based bipolar resistive switching devices PWC Ho, FO Hatem, HAF Almurib, TN Kumar 2014 2nd International Conference on Electronic Design (ICED), 249-254, 2014 | 8 | 2014 |
| Compact SPICE modeling of STT-MTJ device CJ Yee, FO Hatem, TN Kumar, HAF Almurib 2015 IEEE Student Conference on Research and Development (SCOReD), 625 - 628, 2015 | 4 | 2015 |
| Stochastic computing based on volatile GeSe ovonic threshold switching selectors Z Chai, P Freitas, WD Zhang, F Hatem, R Degraeve, S Clima, JF Zhang, ... IEEE Electron Device Letters 41 (10), 1496-1499, 2020 | 3 | 2020 |
| A low-area asynchronous router for clock-less network-on-chip on a FPGA FO Hatem, TN Kumar 2013 IEEE Symposium on Computers & Informatics (ISCI), 152-158, 2013 | 3 | 2013 |
| @ articleInfo {064001, title=" Comparison between Pt/TiO< sub> 2</sub>/Pt and Pt/TaO< sub>< i> X</i></sub>/TaO< sub>< i> Y</i></sub>/Pt based bipolar resistive switching … PWC Ho, FO Hatem, HAF Almurib, TN Kumar Journal of Semiconductors 37 (064001), 13, 2016 | 2 | 2016 |
| Bipolar resistive switching of bi-layered Pt/Ta2O5/TaOx/Pt RRAM: physics-based modelling, circuit design and testing FO Hatem University of Nottingham, 2017 | 1 | 2017 |
John MarslandLiverpool John Moores University在 ljmu.ac.uk 的电子邮件经过验证
