All-optical flip-flop multimode interference bistable laser diode M Takenaka, M Raburn, Y Nakano IEEE Photonics Technology Letters 17 (5), 968-970, 2005 | 164* | 2005 |
Effect of CO2 Bubbling into Aqueous Solutions Used for Electrochemical Reduction of CO2 for Energy Conversion and Storage H Zhong, K Fujii, Y Nakano, F Jin The Journal of Physical Chemistry C 119 (1), 55-61, 2015 | 163 | 2015 |
Facet reflection independent, single longitudinal mode oscillation in a GaAlAs/GaAs distributed feedback laser equipped with a gain‐coupling mechanism Y Nakano, Y Luo, K Tada Applied physics letters 55 (16), 1606-1608, 1989 | 161 | 1989 |
Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift H Yokoi, T Mizumoto, N Shinjo, N Futakuchi, Y Nakano Applied optics 39 (33), 6158-6164, 2000 | 155 | 2000 |
Purely gain‐coupled distributed feedback semiconductor lasers Y Luo, Y Nakano, K Tada, T Inoue, H Hosomatsu, H Iwaoka Applied physics letters 56 (17), 1620-1622, 1990 | 136 | 1990 |
Fabrication and characterization of an InGaAsP/InP active waveguide optical isolator with 14.7 dB/mm TE mode nonreciprocal attenuation H Shimizu, Y Nakano Journal of lightwave technology 24 (1), 38, 2006 | 134 | 2006 |
Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping M Takenaka, K Morii, M Sugiyama, Y Nakano, S Takagi Optics Express 20 (8), 8718-8725, 2012 | 111 | 2012 |
Preparation of low-dielectric-constant F-doped SiO2 films by plasma-enhanced chemical vapor deposition SW Lim, Y Shimogaki, Y Nakano, K Tada, HKH Komiyama Japanese journal of applied physics 35 (2S), 1468, 1996 | 110 | 1996 |
100‐period, 1.23‐eV bandgap InGaAs/GaAsP quantum wells for high‐efficiency GaAs solar cells: toward current‐matched Ge‐based tandem cells H Fujii, K Toprasertpong, Y Wang, K Watanabe, M Sugiyama, Y Nakano Progress in Photovoltaics: Research and Applications 22 (7), 784-795, 2014 | 109 | 2014 |
Characteristics of hydrogen generation from water splitting by polymer electrolyte electrochemical cell directly connected with concentrated photovoltaic cell K Fujii, S Nakamura, M Sugiyama, K Watanabe, B Bagheri, Y Nakano International journal of hydrogen energy 38 (34), 14424-14432, 2013 | 106 | 2013 |
Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential H Feng, JP Pang, M Sugiyama, K Tada, Y Nakano IEEE journal of quantum electronics 34 (7), 1197-1208, 1998 | 100 | 1998 |
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier … M Yokoyama, T Yasuda, H Takagi, N Miyata, Y Urabe, H Ishii, H Yamada, ... Applied Physics Letters 96 (14), 2010 | 84 | 2010 |
Reduction of excess intensity noise induced by external reflection in a gain-coupled distributed feedback semiconductor laser Y Nakano, Y Deguchi, K Ikeda, Y Luo, K Tada IEEE journal of quantum electronics 27 (6), 1732-1735, 1991 | 82 | 1991 |
Fabrication and characteristics of gain-coupled distributed feedback semiconductor lasers with a corrugated active layer Y Luo, Y Nakano, K Tada, T Inoue, H Hosomatsu, H Iwaoka IEEE journal of quantum electronics 27 (6), 1724-1731, 1991 | 81 | 1991 |
Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over‐50%‐efficient lattice‐matched quad‐junction solar cells K Toprasertpong, H Fujii, T Thomas, M Führer, D Alonso‐Álvarez, ... Progress in Photovoltaics: research and applications 24 (4), 533-542, 2016 | 80 | 2016 |
Propagation loss measurement for surface plasmon-polariton modes at metal waveguides on semiconductor substrates T Goto, Y Katagiri, H Fukuda, H Shinojima, Y Nakano, I Kobayashi, ... Applied physics letters 84 (6), 852-854, 2004 | 78 | 2004 |
Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Buried Oxide Layers M Yokoyama, R Iida, S Kim, N Taoka, Y Urabe, H Takagi, T Yasuda, ... IEEE electron device letters 32 (9), 1218-1220, 2011 | 74 | 2011 |
Surface reaction kinetics in metalorganic vapor phase epitaxy of GaAs through analyses of growth rate profile in wide-gap selective-area growth H Oh, M Sugiyama, Y Shimogaki Japanese journal of applied physics 42 (10R), 6284, 2003 | 73 | 2003 |
From sewing thread to sensor: Nylon® fiber strain and pressure sensors YA Samad, K Komatsu, D Yamashita, Y Li, L Zheng, SM Alhassan, ... Sensors and Actuators B: Chemical 240, 1083-1090, 2017 | 69 | 2017 |
InP photonic wire waveguide using InAlAs oxide cladding layer M Takenaka, Y Nakano Optics Express 15 (13), 8422-8427, 2007 | 65 | 2007 |