| 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped-Ga2O3MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ... IEEE Electron Device Letters 37 (7), 902-905, 2016 | 594 | 2016 |
| Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ... Applied Physics Letters 109 (21), 2016 | 383 | 2016 |
| -Ga2O3 MOSFETs for Radio Frequency Operation AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ... IEEE Electron Device Letters 38 (6), 790-793, 2017 | 314 | 2017 |
| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 263 | 2022 |
| Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ... IEEE Electron device letters 39 (1), 67-70, 2017 | 231 | 2017 |
| Self-compensation in semiconductors: The Zn vacancy in Ga-doped ZnO DC Look, KD Leedy, L Vines, BG Svensson, A Zubiaga, F Tuomisto, ... Physical Review B—Condensed Matter and Materials Physics 84 (11), 115202, 2011 | 227 | 2011 |
| Ge-Doped -Ga2O3 MOSFETs N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ... IEEE Electron Device Letters 38 (6), 775-778, 2017 | 202 | 2017 |
| Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ... Applied Physics Letters 111 (1), 2017 | 183 | 2017 |
| Selecting metal alloy electric contact materials for MEMS switches RA Coutu Jr, PE Kladitis, KD Leedy, RL Crane Journal of Micromechanics and Microengineering 14 (8), 1157, 2004 | 173 | 2004 |
| Flyweight, superelastic, electrically conductive, and flame‐retardant 3D multi‐nanolayer graphene/ceramic metamaterial Q Zhang, D Lin, B Deng, X Xu, Q Nian, S Jin, KD Leedy, H Li, GJ Cheng Advanced materials 29 (28), 1605506, 2017 | 142 | 2017 |
| Contact resistance study of noble metals and alloy films using a scanning probe microscope test station L Chen, H Lee, ZJ Guo, NE McGruer, KW Gilbert, S Mall, KD Leedy, ... Journal of applied physics 102 (7), 2007 | 137 | 2007 |
| Characterization of metal and metal alloy films as contact materials in MEMS switches H Lee, RA Coutu, S Mall, KD Leedy Journal of Micromechanics and Microengineering 16 (3), 557, 2006 | 131 | 2006 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 127 | 2019 |
| Microwave ZnO thin-film transistors B Bayraktaroglu, K Leedy, R Neidhard IEEE Electron Device Letters 29 (9), 1024-1026, 2008 | 121 | 2008 |
| Mobility analysis of highly conducting thin films: Application to ZnO DC Look, KD Leedy, DH Tomich, B Bayraktaroglu Applied Physics Letters 96 (6), 2010 | 111 | 2010 |
| High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ... Applied Physics Letters 110 (14), 2017 | 92 | 2017 |
| Optical and electrical properties of ultra-thin indium tin oxide nanofilms on silicon for infrared photonics JW Cleary, EM Smith, KD Leedy, G Grzybowski, J Guo Optical Materials Express 8 (5), 1231-1245, 2018 | 90 | 2018 |
| Coupling of epsilon-near-zero mode to gap plasmon mode for flat-top wideband perfect light absorption JR Hendrickson, S Vangala, C Dass, R Gibson, J Goldsmith, K Leedy, ... Acs Photonics 5 (3), 776-781, 2018 | 87 | 2018 |
| High-frequency ZnO thin-film transistors on Si substrates B Bayraktaroglu, K Leedy, R Neidhard IEEE electron device letters 30 (9), 946-948, 2009 | 87 | 2009 |
| High temperature stability of postgrowth annealed transparent and conductive ZnO: Al films B Bayraktaroglu, K Leedy, R Bedford Applied Physics Letters 93 (2), 2008 | 82 | 2008 |
Andrew J. GreenAir Force Research Lab在 us.af.mil 的电子邮件经过验证
