| Tunnel field-effect transistor without gate-drain overlap AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken Applied Physics Letters 91 (5), 2007 | 477 | 2007 |
| Direct and indirect band-to-band tunneling in germanium-based TFETs KH Kao, AS Verhulst, WG Vandenberghe, B Soree, G Groeseneken, ... IEEE Transactions on Electron Devices 59 (2), 292-301, 2011 | 473 | 2011 |
| Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor AS Verhulst, B Sorée, D Leonelli, WG Vandenberghe, G Groeseneken Journal of Applied Physics 107 (2), 2010 | 278 | 2010 |
| Complementary silicon-based heterostructure tunnel-FETs with high tunnel rates AS Verhulst, WG Vandenberghe, K Maex, S De Gendt, MM Heyns, ... IEEE electron device letters 29 (12), 1398-1401, 2008 | 216 | 2008 |
| Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization AS Verhulst, WG Vandenberghe, K Maex, G Groeseneken Journal of Applied Physics 104 (6), 2008 | 169 | 2008 |
| Optimization of gate-on-source-only tunnel FETs with counter-doped pockets KH Kao, AS Verhulst, WG Vandenberghe, B Soree, W Magnus, D Leonelli, ... IEEE Transactions on Electron Devices 59 (8), 2070-2077, 2012 | 151 | 2012 |
| Drain voltage dependent analytical model of tunnel field-effect transistors AS Verhulst, D Leonelli, R Rooyackers, G Groeseneken Journal of Applied Physics 110 (2), 2011 | 146 | 2011 |
| Fabrication and Analysis of a Heterojunction Line Tunnel FET AM Walke, A Vandooren, R Rooyackers, D Leonelli, A Hikavyy, R Loo, ... IEEE Transactions on Electron Devices 61 (3), 707-715, 2014 | 144 | 2014 |
| Figure of merit for and identification of sub-60 mV/decade devices WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ... Applied Physics Letters 102 (1), 2013 | 132 | 2013 |
| Tunnel field effect transistor with improved subthreshold swing AS Verhulst US Patent 8,304,843, 2012 | 127 | 2012 |
| Analytical model for point and line tunneling in a tunnel field-effect transistor W Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus 2008 international conference on simulation of semiconductor processes and …, 2008 | 118 | 2008 |
| Performance enhancement in multi gate tunneling field effect transistors by scaling the fin-width D Leonelli, A Vandooren, R Rooyackers, AS Verhulst, S De Gendt, ... Japanese Journal of Applied Physics 49 (4S), 04DC10, 2010 | 116 | 2010 |
| Analytical model for a tunnel field-effect transistor WG Vandenberghe, AS Verhulst, G Groeseneken, B Soree, W Magnus MELECON 2008-The 14th IEEE mediterranean electrotechnical conference, 923-928, 2008 | 112 | 2008 |
| Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device R Rooyackers, D Leonelli, A Vandooren, AS Verhulst, R Loo, S De Gendt US Patent 8,415,209, 2013 | 100 | 2013 |
| Wavelength-sensitive detector with elongate nanostructures AS Verhulst, W Vandervorst US Patent 7,598,482, 2009 | 83 | 2009 |
| Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ... 2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011 | 82 | 2011 |
| Tunnel field-effect transistor with gated tunnel barrier WG Vandenberghe, AS Verhulst US Patent 8,120,115, 2012 | 78 | 2012 |
| Contrast reversal in scanning capacitance microscopy imaging R Stephenson, A Verhulst, P De Wolf, M Caymax, W Vandervorst Applied physics letters 73 (18), 2597-2599, 1998 | 68 | 1998 |
| Quantum mechanical performance predictions of pnin versus pocketed line tunnel field-effect transistors D Verreck, AS Verhulst, KH Kao, WG Vandenberghe, K De Meyer, ... IEEE transactions on electron devices 60 (7), 2128-2134, 2013 | 67 | 2013 |
| InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature A Alian, Y Mols, CCM Bordallo, D Verreck, A Verhulst, A Vandooren, ... Applied Physics Letters 109 (24), 2016 | 66 | 2016 |
Guido Groesenekenimec and KU Leuven在 imec.be 的电子邮件经过验证
