| Selective gas detection using a carbon nanotube sensor S Chopra, K McGuire, N Gothard, AM Rao, A Pham Applied Physics Letters 83 (11), 2280-2282, 2003 | 485 | 2003 |
| Selective formation of silicon carbon epitaxial layer Z Ye, S Chopra, A Lam, Y Kim US Patent 7,776,698, 2010 | 459 | 2010 |
| Phosphorus containing Si epitaxial layers in N-type source/drain junctions S Chopra, Z Ye, Y Kim US Patent 7,960,236, 2011 | 455 | 2011 |
| Carbon-nanotube-based resonant-circuit sensor for ammonia S Chopra, A Pham, J Gaillard, A Parker, AM Rao Applied physics letters 80 (24), 4632-4634, 2002 | 420 | 2002 |
| Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts A Agrawal, J Lin, M Barth, R White, B Zheng, S Chopra, S Gupta, K Wang, ... Applied Physics Letters 104 (11), 2014 | 176 | 2014 |
| Punchthrough-diode-based bipolar RRAM selector by Si epitaxy VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ... IEEE Electron Device Letters 33 (10), 1396-1398, 2012 | 111 | 2012 |
| Gas-induced variation in the dielectric properties of carbon nanotube bundles for selective sensing F Picaud, R Langlet, M Arab, M Devel, C Girardet, S Natarajan, S Chopra, ... Journal of applied physics 97 (11), 2005 | 56 | 2005 |
| High n-Type Antimony Dopant Activation in Germanium Using Laser Annealing for Junction Diode G Thareja, S Chopra, B Adams, Y Kim, S Moffatt, K Saraswat, Y Nishi IEEE electron device letters 32 (7), 838-840, 2011 | 53 | 2011 |
| High performance germanium n-MOSFET with antimony dopant activation beyond 1×1020cm−3 G Thareja, J Liang, S Chopra, B Adams, N Patil, SL Cheng, A Nainani, ... 2010 International Electron Devices Meeting, 10.5. 1-10.5. 4, 2010 | 48 | 2010 |
| Role of intraventricular sodium nitroprusside in vasospasm secondary to aneurysmal subarachnoid haemorrhage: a 5-year prospective study with review of the literature A Agrawal, R Patir, Y Kato, S Chopra, H Sano, T Kanno min-Minimally Invasive Neurosurgery 52 (01), 5-8, 2009 | 44 | 2009 |
| Carbon nanotube based resonant-circuit sensor AM Rao, S Chopra US Patent 6,997,039, 2006 | 43 | 2006 |
| METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER Z Ye, S Chopra, Y Kim US Patent 20,110,277,934, 2011 | 42 | 2011 |
| Analysis of boron strain compensation in silicon-germanium alloys by Raman spectroscopy S Chopra, MC Ozturk, V Misra, K McGuire, LE McNeil Applied physics letters 88 (20), 2006 | 40 | 2006 |
| Methods of fabricating strained semiconductor-on-insulator field-effect transistors and related devices M Ozturk, V Misra, S Chopra US Patent 7,211,458, 2007 | 37 | 2007 |
| Low stress mechanical properties of silk fabric degummed by different methods S Chopra, R Chattopadhyay, ML Gulrajani Journal of the Textile Institute 87 (3), 542-553, 1996 | 33 | 1996 |
| High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications Z Ye, S Chopra, R Lapena, Y Kim, S Kuppurao Meeting Abstracts, 3233-3233, 2012 | 30 | 2012 |
| Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10−9 Ω-cm2 using ultrathin TiO2−x interlayer between metal and silicon A Agrawal, J Lin, B Zheng, S Sharma, S Chopra, K Wang, A Gelatos, ... 2013 Symposium on VLSI Technology, T200-T201, 2013 | 25 | 2013 |
| Method and apparatus for precleaning a substrate surface prior to epitaxial growth CS Olsen, TK Guarini, J Tobin, L Hawrylchak, P Stone, CW Lo, S Chopra US Patent 9,683,308, 2017 | 20 | 2017 |
| Quantitative nanoscale local strain profiling in embedded SiGe metal-oxide-semiconductor structures W Zhao, G Duscher, G Rozgonyi, MA Zikry, S Chopra, MC Ozturk Applied physics letters 90 (19), 2007 | 18 | 2007 |
| GHz carbon nanotube resonator bio-sensors K Aihara, J Xiang, S Chopra, A Pham, R Apprao 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003. 2, 612-614, 2003 | 18 | 2003 |
