One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez Nature 553, 63-67, 2018 | 486 | 2018 |
Field-Effect Transistors Based on Few-Layered α-MoTe2 NR Pradhan, D Rhodes, S Feng, Y Xin, S Memaran, BH Moon, ... ACS nano 8 (6), 5911-5920, 2014 | 389 | 2014 |
Hall and field-effect mobilities in few layered p-WSe2 field-effect transistors NR Pradhan, D Rhodes, S Memaran, JM Poumirol, D Smirnov, ... Scientific reports 5 (1), 8979, 2015 | 160 | 2015 |
Ambipolar molybdenum diselenide field-effect transistors: field-effect and hall mobilities NR Pradhan, D Rhodes, Y Xin, S Memaran, L Bhaskaran, M Siddiq, S Hill, ... ACS nano 8 (8), 7923-7929, 2014 | 159 | 2014 |
Pronounced photovoltaic response from multilayered transition-metal dichalcogenides PN-junctions S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, O Ogunsolu, ... Nano letters 15 (11), 7532–7538, 2015 | 114 | 2015 |
Bilayer lateral heterostructures of transition-metal dichalcogenides and their optoelectronic response PK Sahoo, S Memaran, FA Nugera, Y Xin, T Díaz Márquez, Z Lu, ... ACS nano 13 (11), 12372-12384, 2019 | 104 | 2019 |
Layer-and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductor D Shcherbakov, P Stepanov, S Memaran, Y Wang, Y Xin, J Yang, K Wei, ... Science Advances 7 (5), eabe2892, 2021 | 27 | 2021 |
Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors NR Pradhan, C Garcia, B Isenberg, D Rhodes, S Feng, S Memaran, Y Xin, ... Scientific reports 8 (1), 12745, 2018 | 27 | 2018 |
Possible manifestations of the chiral anomaly and evidence for a magnetic field induced topological phase transition in the type-I Weyl semimetal TaAs QR Zhang, B Zeng, YC Chiu, R Schönemann, S Memaran, W Zheng, ... Physical Review B 100 (11), 115138, 2019 | 20 | 2019 |
Uncovering the behavior of Hf2Te2P and the candidate Dirac metal Zr2Te2P KW Chen, S Das, D Rhodes, S Memaran, T Besara, T Siegrist, ... Journal of Physics: Condensed Matter 28 (14), 14LT01, 2016 | 16 | 2016 |
Sequential Edge-Epitaxy in 2D Lateral Heterostructures PK Sahoo, S Memaran, Y Xin, L Balicas, HR Gutiérrez arXiv preprint arXiv:1706.07014, 2017 | 4 | 2017 |
Thickness-and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide Heterostructures W Zheng, L Xiang, FA De Quesada, M Augustin, Z Lu, M Wilson, A Sood, ... ACS nano 16 (11), 18695-18707, 2022 | 3 | 2022 |
Light sources with bias tunable spectrum based on van der Waals interface transistors H Henck, D Mauro, D Domaretskiy, M Philippi, S Memaran, W Zheng, Z Lu, ... Nature Communications 13 (1), 3917, 2022 | 3 | 2022 |
Quantum Hall effect in a two-dimensional semiconductor with large spin-orbit coupling D Shcherbakov, J Yang, S Memaran, K Watanabe, T Taniguchi, ... Physical Review B 106 (4), 045307, 2022 | 2 | 2022 |
Pronounced photovoltaic response from PN-junctions of multi-layered MoSe_2 on h-BN S Memaran, NR Pradhan, Z Lu, D Rhodes, J Ludwig, Q Zhou, P Ajayan, ... arXiv preprint arXiv:1411.2086, 2014 | 2 | 2014 |
Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum Wells D Shcherbakov, G Voigt, S Memaran, GB Liu, Q Wang, K Watanabe, ... Nano Letters 24 (13), 3851-3857, 2024 | 1 | 2024 |
Lateral PN Junctions Based on 2-D Materials S Memaran | 1 | 2018 |
Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Ultrathin InSe Quantum Wells D Shcherbakov, G Voigt, S Memaran, GB Liu, Q Wang, K Watanabe, ... arXiv preprint arXiv:2312.03228, 2023 | | 2023 |
Thickness and twist angle tunable moiré excitons in InSe/GaSe heterostructures W Zheng, L Xiang, FAD Quesada, M Augustin, Z Lu, A Sood, F Wu, ... APS March Meeting Abstracts 2022, D57. 007, 2022 | | 2022 |
Emergence of second electronic subband in ultrathin InSe. D Shcherbakov, G Voigt, S Memaran, K Watanabe, T Taniguchi, L Balicas, ... APS March Meeting Abstracts 2022, F55. 003, 2022 | | 2022 |