| Electrical noise in heterojunction interband tunnel FETs R Pandey, B Rajamohanan, H Liu, V Narayanan, S Datta IEEE Transactions on Electron Devices 61 (2), 552-560, 2013 | 67 | 2013 |
| 0.5 V Supply Voltage Operation of In0.65Ga0.35As/GaAs0.4Sb0.6Tunnel FET B Rajamohanan, R Pandey, V Chobpattana, C Vaz, D Gundlach, ... IEEE Electron Device Letters 36 (1), 20-22, 2014 | 64 | 2014 |
| Application of the SMILE-derived glued lenticule patch graft in microperforations and partial-thickness corneal defects V Bhandari, S Ganesh, S Brar, R Pandey Cornea 35 (3), 408-412, 2016 | 62 | 2016 |
| Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for … R Pandey, H Madan, H Liu, V Chobpattana, M Barth, B Rajamohanan, ... 2015 Symposium on VLSI Technology (VLSI Technology), T206-T207, 2015 | 54 | 2015 |
| Opportunities and challenges of tunnel FETs R Pandey, S Mookerjea, S Datta IEEE Transactions on Circuits and Systems I: Regular Papers 63 (12), 2128-2138, 2016 | 48 | 2016 |
| III–V tunnel FET model with closed-form analytical solution JU Mehta, WA Borders, H Liu, R Pandey, S Datta, L Lunardi IEEE Transactions on Electron Devices 63 (5), 2163-2168, 2015 | 48 | 2015 |
| Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors C Schulte-Braucks, R Pandey, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ... IEEE Transactions on Electron Devices 64 (10), 4354-4362, 2017 | 39 | 2017 |
| Performance benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6and Ge/Ge0.93Sn0.07hetero-junction tunnel FETs R Pandey, C Schulte-Braucks, RN Sajjad, M Barth, RK Ghosh, B Grisafe, ... 2016 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2016 | 32 | 2016 |
| Electrical properties of barium titanate in presence of Sn2+ dopant R Tomar, R Pandey, NB Singh, MK Gupta, P Gupta SN Applied Sciences 2, 1-7, 2020 | 20 | 2020 |
| Gelation in mixtures of polymers and bidisperse colloids R Pandey, JC Conrad Physical Review E 93 (1), 012610, 2016 | 20 | 2016 |
| Impact of contact and local interconnect scaling on logic performance S Datta, R Pandey, A Agrawal, SK Gupta, R Arghavani 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 20 | 2014 |
| Impact of single trap random telegraph noise on heterojunction TFET SRAM stability R Pandey, V Saripalli, JP Kulkarni, V Narayanan, S Datta IEEE Electron Device Letters 35 (3), 393-395, 2014 | 19 | 2014 |
| Interface healing and its correlation with visual recovery and quality of vision following small incision lenticule extraction S Ganesh, S Brar, R Pandey, A Pawar Indian Journal of Ophthalmology 66 (2), 212-218, 2018 | 17 | 2018 |
| Dynamics of confined depletion mixtures of polymers and bidispersed colloids R Pandey, JC Conrad Soft Matter 9 (44), 10617-10626, 2013 | 16 | 2013 |
| Effects of attraction strength on microchannel flow of colloid–polymer depletion mixtures R Pandey, JC Conrad Soft Matter 8 (41), 10695-10703, 2012 | 14 | 2012 |
| Analysis of local interconnect resistance at scaled process nodes R Pandey, N Agrawal, R Arghavani, S Datta 2015 73rd Annual Device Research Conference (DRC), 184-184, 2015 | 13 | 2015 |
| Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy JS Liu, MB Clavel, R Pandey, S Datta, M Meeker, GA Khodaparast, ... Journal of Applied Physics 119 (24), 2016 | 12 | 2016 |
| Gate/Source overlapped heterojunction tunnel FET for non-Boolean associative processing with plasticity AR Trivedi, R Pandey, H Liu, S Datta, S Mukhopadhyay 2015 IEEE International Electron Devices Meeting (IEDM), 17.8. 1-17.8. 4, 2015 | 11 | 2015 |
| Tunnel junction abruptness, source random dopant fluctuation and PBTI induced variability analysis of GaAs0. 4Sb0. 6/In0. 65Ga0. 35As heterojunction tunnel FETs R Pandey, N Agrawal, V Chobpattana, K Henry, M Kuhn, H Liu, M Labella, ... 2015 IEEE International Electron Devices Meeting (IEDM), 14.2. 1-14.2. 4, 2015 | 7 | 2015 |
| Pulsed IV on TFETs: Modeling and measurements Q Smets, A Verhulst, JH Kim, JP Campbell, D Nminibapiel, D Veksler, ... IEEE Transactions on Electron Devices 64 (4), 1489-1497, 2017 | 6 | 2017 |
Suman DattaJoseph M. Pettit Chair Professor在 gatech.edu 的电子邮件经过验证
