ZigBee and Bluetooth: Strengths and weaknesses for industrial applications N Baker Computing and Control Engineering 16 (2), 20-25, 2005 | 509 | 2005 |
Improved reliability of power modules: A review of online junction temperature measurement methods N Baker, M Liserre, L Dupont, Y Avenas IEEE Industrial Electronics Magazine 8 (3), 17-27, 2014 | 243 | 2014 |
IGBT junction temperature measurement via peak gate current N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2015 | 153 | 2015 |
Condition monitoring: A decade of proposed techniques Y Avenas, L Dupont, N Baker, H Zara, F Barruel IEEE Industrial Electronics Magazine 9 (4), 22-36, 2015 | 119 | 2015 |
IR camera validation of IGBT junction temperature measurement via peak gate current N Baker, L Dupont, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics 32 (4), 3099-3111, 2016 | 106 | 2016 |
Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters N Baker, M Liserre, L Dupont, Y Avenas IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society …, 2013 | 68 | 2013 |
Online junction temperature measurement via internal gate resistance during turn-on N Baker, S Munk-Nielsen, M Liserre, F Iannuzzo 2014 16th European conference on power electronics and applications, 1-10, 2014 | 57 | 2014 |
Study of current density influence on bond wire degradation rate in SiC MOSFET modules H Luo, F Iannuzzo, N Baker, F Blaabjerg, W Li, X He IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019 | 44 | 2019 |
Online junction temperature measurement using peak gate current N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre 2015 IEEE Applied Power Electronics Conference and Exposition (APEC), 1270-1275, 2015 | 42 | 2015 |
Simultaneous on-state voltage and bond-wire resistance monitoring of silicon carbide MOSFETs N Baker, H Luo, F Iannuzzo Energies 10 (3), 384, 2017 | 38 | 2017 |
Die degradation effect on aging rate in accelerated cycling tests of SiC power MOSFET modules H Luo, N Baker, F Iannuzzo, F Blaabjerg Microelectronics Reliability 76, 415-419, 2017 | 36 | 2017 |
Test setup for long term reliability investigation of Silicon Carbide MOSFETs N Baker, S Munk-Nielsen, S Bęczkowski 2013 15th European Conference on Power Electronics and Applications (EPE), 1-9, 2013 | 34 | 2013 |
Vce-based chip temperature estimation methods for high power IGBT modules during power cycling—A comparison A Amoiridis, A Anurag, P Ghimire, S Munk-Nielsen, N Baker 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 31 | 2015 |
The temperature dependence of the flatband voltage in high-power IGBTs N Baker, F Iannuzzo IEEE Transactions on Industrial Electronics 66 (7), 5581-5584, 2018 | 29 | 2018 |
Development of an X-ray imaging system to prevent scintillator degradation for white synchrotron radiation T Zhou, H Wang, T Connolley, S Scott, N Baker, K Sawhney Journal of Synchrotron Radiation 25 (3), 801-807, 2018 | 21 | 2018 |
Impact of Kelvin-source resistors on current sharing and failure detection in multichip power modules N Baker, F Iannuzzo, H Li 2018 20th European Conference on Power Electronics and Applications (EPE'18 …, 2018 | 18 | 2018 |
Experimental evaluation of IGBT junction temperature measurement via peak gate current N Baker, S Munk-Nielsen, F Iannuzzo, L Dupont, M Liserre 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 17 | 2015 |
Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis H Du, S Letz, N Baker, T Goetz, F Iannuzzo, A Schletz Microelectronics Reliability 114, 113784, 2020 | 12 | 2020 |
An electrical method for junction temperature measurement of power semiconductor switches N Baker | 12 | 2016 |
Smart SiC MOSFET accelerated lifetime testing N Baker, F Iannuzzo Microelectronics Reliability 88, 43-47, 2018 | 11 | 2018 |