| Self-aligned SiGe NPN transistors with 285 GHz fmax and 207 GHz fT in a manufacturable technology B Jagannathan, M Khater, F Pagette, JS Rieh, D Angell, H Chen, ... IEEE Electron Device Letters 23 (5), 258-260, 2002 | 361 | 2002 |
| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 299 | 2018 |
| SiGe HBTs with cut-off frequency of 350 GHz JS Rieh, B Jagannathan, H Chen, KT Schonenberg, D Angell, ... Digest. International Electron Devices Meeting,, 771-774, 2002 | 271 | 2002 |
| Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer KK Linder, FC Zhang, JS Rieh, PK Bhattacharya, D Houghton The American Institute of Physics, 1997 | 173 | 1997 |
| Half-terahertz operation of SiGe HBTs R Krithivasan, Y Lu, JD Cressler, JS Rieh, MH Khater, D Ahlgren, ... IEEE electron device letters 27 (7), 567-569, 2006 | 142 | 2006 |
| A 210-GHz fTSiGe HBT with a non-self-aligned structure SJ Jeng, B Jagannathan, JS Rieh, J Johnson, KT Schonenberg, ... IEEE Electron Device Letters 22 (11), 542-544, 2001 | 142 | 2001 |
| Foundation of RF CMOS and SiGe BiCMOS technologies JS Dunn, DC Ahlgren, DD Coolbaugh, NB Feilchenfeld, G Freeman, ... IBM Journal of Research and Development 47 (2.3), 101-138, 2003 | 132 | 2003 |
| SiGe heterojunction bipolar transistors and circuits toward terahertz communication applications JS Rieh, B Jagannathan, DR Greenberg, M Meghelli, A Rylyakov, ... IEEE transactions on Microwave Theory and Techniques 52 (10), 2390-2408, 2004 | 122 | 2004 |
| SiGe HBT technology with f/sub max//f/sub T/= 350/300 GHz and gate delay below 3.3 ps M Khater, JS Rieh, T Adam, A Chinthakindi, J Johnson, R Krishnasamy, ... IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 120 | 2004 |
| A 0.13/spl mu/m BiCMOS technology featuring a 200/280 GHz (f/sub T//f/sub max/) SiGe HBT Orner, Liu, Rainey, Stricker, Geiss, Zierak, Collins, Ramachandran, ... 2003 Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting (IEEE …, 2003 | 111 | 2003 |
| RF characterization and modeling of various wire bond transitions JH Lim, DH Kwon, JS Rieh, SW Kim, SW Hwang IEEE Transactions on Advanced Packaging 28 (4), 772-778, 2005 | 104 | 2005 |
| Scaling of SiGe heterojunction bipolar transistors JS Rieh, D Greenberg, A Stricker, G Freeman Proceedings of the IEEE 93 (9), 1522-1538, 2005 | 102 | 2005 |
| 40-Gb/s circuits built from a 120-GHz f/sub T/SiGe technology G Freeman, M Meghelli, Y Kwark, S Zier, A Rylyakov, MA Sorna, T Tanji, ... IEEE Journal of Solid-State Circuits 37 (9), 1106-1114, 2002 | 86 | 2002 |
| Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors JS Rieh, D Greenberg, B Jagannathan, G Freeman, S Subbanna 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems …, 2001 | 86 | 2001 |
| Transistor design and application considerations for> 200-GHz SiGe HBTs G Freeman, B Jagannathan, SJ Jeng, JS Rieh, AD Stricker, DC Ahlgren, ... IEEE Transactions on Electron Devices 50 (3), 645-655, 2003 | 81 | 2003 |
| Performance and design considerations for high speed SiGe HBTs of f/sub T//f/sub max/= 375 GHz/210 GHz JS Rieh, B Jagannathan, H Chen, K Schonenberg, SJ Jeng, M Khater, ... International Conference onIndium Phosphide and Related Materials, 2003 …, 2003 | 80 | 2003 |
| SiGe HBTs for millimeter-wave applications with simultaneously optimized f/sub T/and f/sub max/of 300 GHz JS Rieh, D Greenberg, M Khater, KT Schonenberg, SJ Jeng, F Pagette, ... 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of …, 2004 | 79 | 2004 |
| The revolution in SiGe: Impact on device electronics DL Harame, SJ Koester, G Freeman, P Cottrel, K Rim, G Dehlinger, ... Applied Surface Science 224 (1-4), 9-17, 2004 | 78 | 2004 |
| On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds J Yuan, JD Cressler, R Krithivasan, T Thrivikraman, MH Khater, ... IEEE Transactions on Electron Devices 56 (5), 1007-1019, 2009 | 76 | 2009 |
| 300 GHz integrated heterodyne receiver and transmitter with on-chip fundamental local oscillator and mixers S Kim, J Yun, D Yoon, M Kim, JS Rieh, M Urteaga, S Jeon IEEE Transactions on Terahertz Science and Technology 5 (1), 92-101, 2014 | 75 | 2014 |
