Density-matrix electronic-structure method with linear system-size scaling XP Li, RW Nunes, D Vanderbilt Physical Review B 47 (16), 10891, 1993 | 873 | 1993 |
Berry-phase treatment of the homogeneous electric field perturbation in insulators RW Nunes, X Gonze Physical Review B 63 (15), 155107, 2001 | 339 | 2001 |
Electronic structure and energetics of layered structures MSC Mazzoni, RW Nunes, S Azevedo, H Chacham Physical Review B—Condensed Matter and Materials Physics 73 (7), 073108, 2006 | 179 | 2006 |
Generalization of the density-matrix method to a nonorthogonal basis RW Nunes, D Vanderbilt Physical Review B 50 (23), 17611, 1994 | 178 | 1994 |
Period-doubled structure for the 90 partial dislocation in silicon J Bennetto, RW Nunes, D Vanderbilt Physical review letters 79 (2), 245, 1997 | 159 | 1997 |
Real-space approach to calculation of electric polarization and dielectric constants RW Nunes, D Vanderbilt Physical review letters 73 (5), 712, 1994 | 142 | 1994 |
Structure and energetics of boron nitride fullerenes: The role of stoichiometry SS Alexandre, H Chacham, RW Nunes Physical Review B 63 (4), 045402, 2001 | 118 | 2001 |
Lattice relaxation at the interface of two-dimensional crystals: graphene and hexagonal boron-nitride J Lu, LC Gomes, RW Nunes, AH Castro Neto, KP Loh Nano Letters 14 (9), 5133-5139, 2014 | 108 | 2014 |
Structures of Si and Ge nanowires in the subnanometer range R Kagimura, RW Nunes, H Chacham Physical review letters 95 (11), 115502, 2005 | 101 | 2005 |
Correlated magnetic states in extended one-dimensional defects in graphene SS Alexandre, AD Lúcio, AHC Neto, RW Nunes Nano letters 12 (10), 5097-5102, 2012 | 85 | 2012 |
Atomic structure of dislocation kinks in silicon RW Nunes, J Bennetto, D Vanderbilt Physical Review B 57 (17), 10388, 1998 | 81 | 1998 |
Stability of antiphase line defects in nanometer-sized boron nitride cones S Azevedo, MSC Mazzoni, RW Nunes, H Chacham Physical Review B—Condensed Matter and Materials Physics 70 (20), 205412, 2004 | 80 | 2004 |
Structure, barriers, and relaxation mechanisms of kinks in the 90 partial dislocation in silicon RW Nunes, J Bennetto, D Vanderbilt Physical review letters 77 (8), 1516, 1996 | 80 | 1996 |
Core reconstruction of the partial dislocation in nonpolar semiconductors RW Nunes, J Bennetto, D Vanderbilt Physical Review B 58 (19), 12563, 1998 | 60 | 1998 |
Electron states in boron nitride nanocones S Azevedo, MSC Mazzoni, H Chacham, RW Nunes Applied physics letters 82 (14), 2323-2325, 2003 | 51 | 2003 |
Theoretical search for Chevrel-phase-based thermoelectric materials RW Nunes, II Mazin, DJ Singh Physical Review B 59 (12), 7969, 1999 | 49 | 1999 |
Energetics of the formation of dimers and solids of boron nitride fullerenes SS Alexandre, RW Nunes, H Chacham Physical Review B 66 (8), 085406, 2002 | 42 | 2002 |
Surface Dangling-Bond States and Band Lineups in Hydrogen-Terminated Si, Ge, <?format ?>and Nanowires R Kagimura, RW Nunes, H Chacham Physical review letters 98 (2), 026801, 2007 | 39 | 2007 |
Stability of edges and extended defects on boron nitride and graphene monolayers: the role of chemical environment LC Gomes, SS Alexandre, H Chacham, RW Nunes The Journal of Physical Chemistry C 117 (22), 11770-11779, 2013 | 38 | 2013 |
A study of inner process double-resonance Raman scattering in bilayer graphene DL Mafra, EA Moujaes, SK Doorn, H Htoon, RW Nunes, MA Pimenta Carbon 49 (5), 1511-1515, 2011 | 37 | 2011 |