| Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ... Applied Physics Letters 112 (17), 2018 | 388 | 2018 |
| Donors and deep acceptors in β-Ga2O3 AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ... Applied Physics Letters 113 (6), 2018 | 262 | 2018 |
| β-Gallium oxide power electronics AJ Green, J Speck, G Xing, P Moens, F Allerstam, K Gumaelius, T Neyer, ... Apl Materials 10 (2), 2022 | 254 | 2022 |
| Ge-Doped -Ga2O3 MOSFETs N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ... IEEE Electron Device Letters 38 (6), 775-778, 2017 | 200 | 2017 |
| Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao Applied Physics Letters 109 (13), 2016 | 150 | 2016 |
| Single defect light-emitting diode in a van der Waals heterostructure G Clark, JR Schaibley, J Ross, T Taniguchi, K Watanabe, JR Hendrickson, ... Nano letters 16 (6), 3944-3948, 2016 | 142 | 2016 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 127 | 2019 |
| Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices AT Neal, S Mou, R Lopez, JV Li, DB Thomson, KD Chabak, GH Jessen Scientific reports 7 (1), 13218, 2017 | 118 | 2017 |
| MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor G Seryogin, F Alema, N Valente, H Fu, E Steinbrunner, AT Neal, S Mou, ... Applied Physics Letters 117 (26), 2020 | 115 | 2020 |
| Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle S Rafique, L Han, AT Neal, S Mou, J Boeckl, H Zhao physica status solidi (a) 215 (2), 1700467, 2018 | 105 | 2018 |
| Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect PF Qiao, S Mou, SL Chuang Optics express 20 (3), 2319-2334, 2012 | 87 | 2012 |
| P-type conduction in two-dimensional MoS2 via oxygen incorporation AT Neal, R Pachter, S Mou Applied Physics Letters 110 (19), 2017 | 77 | 2017 |
| Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS2 B Akdim, R Pachter, S Mou Nanotechnology 27 (18), 185701, 2016 | 65 | 2016 |
| Temperature and doping concentration dependence of the energy band gap in β-Ga2O3 thin films grown on sapphire S Rafique, L Han, S Mou, H Zhao Optical Materials Express 7 (10), 3561-3570, 2017 | 62 | 2017 |
| Midinfrared type-II InAs∕ GaSb superlattice photodiodes toward room temperature operation JV Li, CJ Hill, J Mumolo, S Gunapala, S Mou, SL Chuang Applied Physics Letters 93 (16), 2008 | 56 | 2008 |
| Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy P Vogt, FVE Hensling, K Azizie, CS Chang, D Turner, J Park, ... Apl Materials 9 (3), 2021 | 53 | 2021 |
| Metalorganic chemical vapor deposition growth of high-quality InAs∕ GaSb type II superlattices on (001) GaAs substrates XB Zhang, JH Ryou, RD Dupuis, A Petschke, S Mou, SL Chuang, C Xu, ... Applied Physics Letters 88 (7), 2006 | 47 | 2006 |
| Superhydrophobicity of hierarchical ZnO nanowire coatings M Gong, Z Yang, X Xu, D Jasion, S Mou, H Zhang, Y Long, S Ren Journal of Materials Chemistry A 2 (17), 6180-6184, 2014 | 46 | 2014 |
| Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor CA Lenyk, NC Giles, EM Scherrer, BE Kananen, LE Halliburton, ... Journal of Applied Physics 125 (4), 2019 | 45 | 2019 |
| Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ... IEEE Electron Device Letters 41 (7), 989-992, 2020 | 41 | 2020 |
Adam T. NealAir Force Research Lab在 us.af.mil 的电子邮件经过验证
