受强制性开放获取政策约束的文章 - Shin Mou了解详情
无法在其他位置公开访问的文章：8 篇
Single defect light-emitting diode in a van der Waals heterostructure
G Clark, JR Schaibley, J Ross, T Taniguchi, K Watanabe, JR Hendrickson, ...
Nano letters 16 (6), 3944-3948, 2016
强制性开放获取政策： Research Grants Council, Hong Kong
Tunability in the optical response of defective monolayer WSe 2 by computational analysis
J Jiang, R Pachter, S Mou
Nanoscale 10 (28), 13751-13760, 2018
强制性开放获取政策： US Department of Defense
Study of defects in β-Ga2O3 by isothermal capacitance transient spectroscopy
YY Lin, AT Neal, S Mou, JV Li
Journal of Vacuum Science & Technology B 37 (4), 2019
强制性开放获取政策： US Department of Defense
Enhancing the efficiency of quasi-solid-state dye-sensitized solar cells by adding bis (trifluoromethane) sulfonimide lithium salt and camphorsulfonic acid to gel-based …
CH Tsai, YL Chen, HL Hsu, YR Ma, S Mou
Materials Research Bulletin 107, 87-93, 2018
强制性开放获取政策： US Department of Defense
Tailoring the Potential Landscape and Electrical Properties of 2D MoS2 Using Gold Nanostructures of Different Coverage Density
SIK Bhim Chamlagain, Udai Bhanu, Shin Mou
The Journal of Physical Chemistry C 124 (11), 6461-6466, 2020
强制性开放获取政策： US Department of Defense
Synthesis of highly dense MoO2/MoS2 core–shell nanoparticles via chemical vapor deposition
SS Withanage, V Charles, B Chamlagain, R Wheeler, S Mou, ...
Nanotechnology 32 (5), 055605, 2020
强制性开放获取政策： US Department of Defense
High-Temperature Electronics Using Ga203 FETs and AIGaN/GaN HEMTs
AE Islam, M Grupen, G Hughes, A Popp, NP Sepelak, KD Leedy, T Asel, ...
NAECON 2023-IEEE National Aerospace and Electronics Conference, 263-268, 2023
强制性开放获取政策： US Department of Defense
Graphene-based test platform in potential application for FET with guanine as gate dielectric
AD Williams, F Ouchen, SS Kim, YH Ngo, S Elhamri, A Siwecki, S Mou, ...
Journal of Electronic Materials 44, 3481-3485, 2015
强制性开放获取政策： US Department of Energy
可在其他位置公开访问的文章：30 篇
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x) 2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 2018
强制性开放获取政策： US Department of Defense
Donors and deep acceptors in β-Ga2O3
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 2018
强制性开放获取政策： US Department of Defense
Ge-Doped -Ga2O3 MOSFETs
N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ...
IEEE Electron Device Letters 38 (6), 775-778, 2017
强制性开放获取政策： US National Science Foundation, US Department of Defense
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
强制性开放获取政策： US Department of Defense
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
G Seryogin, F Alema, N Valente, H Fu, E Steinbrunner, AT Neal, S Mou, ...
Applied Physics Letters 117 (26), 2020
强制性开放获取政策： US Department of Defense
Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices
AT Neal, S Mou, R Lopez, JV Li, DB Thomson, KD Chabak, GH Jessen
Scientific reports 7 (1), 13218, 2017
强制性开放获取政策： US Department of Defense
Towards High‐Mobility Heteroepitaxial β‐Ga2O3 on Sapphire − Dependence on The Substrate Off‐Axis Angle
S Rafique, L Han, AT Neal, S Mou, J Boeckl, H Zhao
physica status solidi (a) 215 (2), 1700467, 2018
强制性开放获取政策： US National Science Foundation, US Department of Defense
P-type conduction in two-dimensional MoS2 via oxygen incorporation
AT Neal, R Pachter, S Mou
Applied Physics Letters 110 (19), 2017
强制性开放获取政策： US Department of Defense
Temperature and doping concentration dependence of the energy band gap in β-Ga2O3 thin films grown on sapphire
S Rafique, L Han, S Mou, H Zhao
Optical Materials Express 7 (10), 3561-3570, 2017
强制性开放获取政策： US National Science Foundation
Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy
P Vogt, FVE Hensling, K Azizie, CS Chang, D Turner, J Park, ...
Apl Materials 9 (3), 2021
强制性开放获取政策： US National Science Foundation, US Department of Defense, US National …
Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor
CA Lenyk, NC Giles, EM Scherrer, BE Kananen, LE Halliburton, ...
Journal of Applied Physics 125 (4), 2019
强制性开放获取政策： US Department of Defense
Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band
NA Moser, T Asel, KJ Liddy, M Lindquist, NC Miller, S Mou, A Neal, ...
IEEE Electron Device Letters 41 (7), 989-992, 2020
强制性开放获取政策： US Department of Defense
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