| A 65-nm CMOS fully integrated transceiver module for 60-GHz wireless HD applications A Siligaris, O Richard, B Martineau, C Mounet, F Chaix, R Ferragut, ... IEEE Journal of Solid-State Circuits 46 (12), 3005-3017, 2011 | 227 | 2011 |
| A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS B Martineau, V Knopik, A Siligaris, F Gianesello, D Belot 2010 IEEE International Solid-State Circuits Conference-(ISSCC), 428-429, 2010 | 127 | 2010 |
| A 60 GHz power amplifier with 14.5 dBm saturation power and 25% peak PAE in CMOS 65 nm SOI A Siligaris, Y Hamada, C Mounet, C Raynaud, B Martineau, N Deparis, ... IEEE Journal of Solid-State Circuits 45 (7), 1286-1294, 2010 | 114 | 2010 |
| 2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P1dBand 74mW PDC A Larie, E Kerhervé, B Martineau, L Vogt, D Belot 2015 IEEE International Solid-State Circuits Conference-(ISSCC) Digest of …, 2015 | 70 | 2015 |
| Design for millimeter-wave applications in silicon technologies A Cathelin, B Martineau, N Seller, S Douyere, J Gorisse, S Pruvost, ... ESSCIRC 2007-33rd European Solid-State Circuits Conference, 464-471, 2007 | 51 | 2007 |
| A 56-GHz LC-Tank VCO With 17% Tuning Range in 65-nm Bulk CMOS for Wireless HDMI JL González, F Badets, B Martineau, D Belot IEEE transactions on microwave theory and techniques 58 (5), 1359-1366, 2010 | 46 | 2010 |
| Switch with phase change material D Belot, A Larie, B Martineau US Patent 10,164,608, 2018 | 42 | 2018 |
| 1.8 dB insertion loss 200 GHz CPW band pass filter integrated in HR SOI CMOS Technology F Gianesello, D Gloria, S Montusclat, C Raynaud, S Boret, G Dambrine, ... 2007 IEEE/MTT-S International Microwave Symposium, 453-456, 2007 | 39 | 2007 |
| 80 GHz low noise amplifiers in 65nm CMOS SOI B Martineau, A Cathelin, F Danneville, A Kaiser, G Dambrine, S Lepilliet, ... ESSCIRC 2007-33rd European Solid-State Circuits Conference, 348-351, 2007 | 38 | 2007 |
| 94GHz power-combining power amplifier with+ 13dBm saturated output power in 65nm CMOS D Sandström, B Martineau, M Varonen, M Kärkkäinen, A Cathelin, ... 2011 IEEE Radio Frequency Integrated Circuits Symposium, 1-4, 2011 | 37 | 2011 |
| A 12 Gb/s 64QAM and OFDM compatible millimeter-wave communication link using a novel plastic waveguide design F Voineau, C Dehos, B Martineau, M Sié, M Perchicot, NH Nguyen, ... 2018 IEEE Radio and Wireless Symposium (RWS), 250-252, 2018 | 36 | 2018 |
| SamurAI: A 1.7 MOPS-36GOPS adaptive versatile IoT node with 15,000× peak-to-idle power reduction, 207ns wake-up time and 1.3 TOPS/W ML efficiency I Miro-Panades, B Tain, JF Christmann, D Coriat, R Lemaire, C Jany, ... 2020 IEEE Symposium on VLSI Circuits, 1-2, 2020 | 33 | 2020 |
| A 56GHz LC-tank VCO with 17% tuning range in 65nm bulk CMOS for wireless HDMI applications JLG Jimenez, F Badets, B Martineau, D Belot 2009 IEEE Radio Frequency Integrated Circuits Symposium, 481-484, 2009 | 33 | 2009 |
| High frequency low noise potentialities of down to 65 nm technology nodes MOSFETs G Dambrine, D Gloria, P Scheer, C Raynaud, F Danneville, S Lepilliet, ... European Gallium Arsenide and Other Semiconductor Application Symposium …, 2005 | 29 | 2005 |
| A 1.2 V 20 dBm 60 GHz power amplifier with 32.4 dB gain and 20% peak PAE in 65nm CMOS A Larie, E Kerhervé, B Martineau, V Knopik, D Belot ESSCIRC 2014-40th European Solid State Circuits Conference (ESSCIRC), 175-178, 2014 | 24 | 2014 |
| Potentialités de la technologie CMOS 65nm SOI pour des applications sans fils en bande millimétrique B Martineau | 20 | 2008 |
| Radio frequency combiner B Martineau, O Richard, F Gianesello US Patent 8,843,087, 2014 | 19 | 2014 |
| Deep-submicron digital CMOS potentialities for millimeter-wave applications A Cathelin, B Martineau, N Seller, F Gianesello, C Raynaud, D Belot 2008 IEEE Radio Frequency Integrated Circuits Symposium, 53-56, 2008 | 19 | 2008 |
| 65 nm HR SOI CMOS technology: emergence of millimeter-wave SoC F Gianesello, S Montusclat, B Martineau, D Gloria, C Raynaud, S Boret, ... 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 555-558, 2007 | 18 | 2007 |
| Temperature sensors to measure the central frequency and 3 dB bandwidth in mmW power amplifiers J Altet, D Mateo, D Gómez, JLG Jiménez, B Martineau, A Siligaris, ... IEEE microwave and wireless components letters 24 (4), 272-274, 2014 | 17 | 2014 |
