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Yago Gonzalez-Velo
Yago Gonzalez-Velo
在 asu.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells
W Chen, R Fang, MB Balaban, W Yu, Y Gonzalez-Velo, HJ Barnaby, ...
Nanotechnology 27 (25), 255202, 2016
832016
Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory
R Fang, Y Gonzalez Velo, W Chen, KE Holbert, MN Kozicki, H Barnaby, ...
Applied Physics Letters 104 (18), 2014
812014
Review of radiation effects on ReRAM devices and technology
Y Gonzalez-Velo, HJ Barnaby, MN Kozicki
Semiconductor Science and Technology 32 (8), 083002, 2017
512017
Total-ionizing-dose effects on the resistance switching characteristics of chalcogenide programmable metallization cells
Y Gonzalez-Velo, HJ Barnaby, MN Kozicki, P Dandamudi, A Chandran, ...
IEEE Transactions on Nuclear science 60 (6), 4563-4569, 2013
472013
Incremental resistance programming of programmable metallization cells for use as electronic synapses
D Mahalanabis, HJ Barnaby, Y Gonzalez-Velo, MN Kozicki, S Vrudhula, ...
Solid-state electronics 100, 39-44, 2014
432014
Total ionizing dose retention capability of conductive bridging random access memory
Y Gonzalez-Velo, HJ Barnaby, MN Kozicki, C Gopalan, K Holbert
IEEE Electron Device Letters 35 (2), 205-207, 2014
432014
Ionizing radiation effects on nonvolatile memory properties of programmable metallization cells
JL Taggart, Y Gonzalez-Velo, D Mahalanabis, A Mahmud, HJ Barnaby, ...
IEEE Transactions on Nuclear Science 61 (6), 2985-2990, 2014
412014
The use of a dose-rate switching technique to characterize bipolar devices
JÉÔ Boch, YG Velo, FÉÉ Saigne, NJH Roche, RD Schrimpf, JR Vaille, ...
IEEE transactions on Nuclear Science 56 (6), 3347-3353, 2009
412009
A Study of Gamma-Ray Exposure of Cu–SiOProgrammable Metallization Cells
W Chen, HJ Barnaby, MN Kozicki, AH Edwards, Y Gonzalez-Velo, R Fang, ...
IEEE Transactions on Nuclear Science 62 (6), 2404-2411, 2015
312015
Total Ionizing Dose Tolerance of based Programmable Metallization Cells
P Dandamudi, MN Kozicki, HJ Barnaby, Y Gonzalez-Velo, KE Holbert
IEEE Transactions on Nuclear Science 61 (4), 1726-1731, 2014
312014
Investigation and analysis of LM124 bipolar linear circuitry response phenomenon in pulsed X-ray environment
NJH Roche, L Dusseau, JR Vaillé, J Mekki, YG Velo, S Perez, J Boch, ...
IEEE Transactions on Nuclear Science 57 (6), 3392-3399, 2010
312010
Review and analysis of the radiation-induced degradation observed for the input bias current of linear integrated circuits
L Dusseau, M Bernard, J Boch, YG Velo, N Roche, E Lorfevre, F Bezerra, ...
IEEE Transactions on Nuclear Science 55 (6), 3174-3181, 2008
312008
Static impedance behavior of programmable metallization cells
S Rajabi, M Saremi, HJ Barnaby, A Edwards, MN Kozicki, M Mitkova, ...
Solid-State Electronics 106, 27-33, 2015
302015
Effects of cobalt-60 gamma-rays on Ge-Se chalcogenide glasses and Ag/Ge-Se test structures
Y Gonzalez-Velo, HJ Barnaby, A Chandran, DR Oleksy, P Dandamudi, ...
IEEE Transactions on Nuclear Science 59 (6), 3093-3100, 2012
282012
Sensors based on radiation-induced diffusion of silver in germanium selenide glasses
P Dandamudi, MN Kozicki, HJ Barnaby, Y Gonzalez-Velo, M Mitkova, ...
IEEE Transactions on Nuclear Science 60 (6), 4257-4264, 2013
262013
Development of a new methodology to model the synergistic effects between TID and ASETs
NJH Roche, L Dusseau, J Boch, YG Velo, JR Vaillé, F Saigné, G Auriel, ...
IEEE Transactions on Nuclear Science 57 (4), 1861-1868, 2010
242010
Accelerated irradiation method to study synergy effects in bipolar integrated circuits
NJH Roche, YG Velo, L Dusseau, JÉÔ Boch, JR Vaille, F Saigné, B Azais, ...
IEEE Transactions on Nuclear Science 56 (4), 1971-1977, 2009
222009
New functionality of chalcogenide glasses for radiation sensing of nuclear wastes
MS Ailavajhala, Y Gonzalez-Velo, CD Poweleit, HJ Barnaby, MN Kozicki, ...
Journal of Hazardous Materials 269, 68-73, 2014
212014
Gamma radiation induced effects in floppy and rigid Ge-containing chalcogenide thin films
MS Ailavajhala, Y Gonzalez-Velo, C Poweleit, H Barnaby, MN Kozicki, ...
Journal of Applied Physics 115 (4), 2014
212014
Bias effects on total dose-induced degradation of bipolar linear microcircuits for switched dose-rate irradiation
YG Velo, J Boch, NJH Roche, S Perez, JR Vaille, L Dusseau, F Saigne, ...
IEEE Transactions on Nuclear Science 57 (4), 1950-1957, 2010
212010
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