关注
Susumu Fukatsu
Susumu Fukatsu
University of Tokyo, Professor of Physics
在 mail.ecc.u-tokyo.ac.jp 的电子邮件经过验证
标题
引用次数
引用次数
年份
Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
K Muraki, S Fukatsu, Y Shiraki, R Ito
Applied Physics Letters 61 (5), 557-559, 1992
6101992
Island formation during growth of Ge on Si (100): A study using photoluminescence spectroscopy
H Sunamura, N Usami, Y Shiraki, S Fukatsu
Applied Physics Letters 66 (22), 3024-3026, 1995
3171995
Self‐limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth
S Fukatsu, K Fujita, H Yaguchi, Y Shiraki, R Ito
Applied physics letters 59 (17), 2103-2105, 1991
2581991
MOVPE growth of cubic GaN on GaAs using dimethylhydrazine
S Miyoshi, K Onabe, N Ohkouchi, H Yaguchi, R Ito, S Fukatsu, Y Shiraki
Journal of crystal growth 124 (1-4), 439-442, 1992
2111992
Phononless radiative recombination of indirect excitons in a Si/Ge type-II quantum dot
S Fukatsu, H Sunamura, Y Shiraki, S Komiyama
Applied physics letters 71 (2), 258-260, 1997
1471997
Determination of quadratic nonlinear optical coefficient of AlxGa1−xAs system by the method of reflected second harmonics
M Ohashi, T Kondo, R Ito, S Fukatsu, Y Shiraki, K Kumata, SS Kano
Journal of applied physics 74 (1), 596-601, 1993
1221993
Growth mode transition and photoluminescence properties of Si1−xGex/Si quantum well structures with high Ge composition
H Sunamura, Y Shiraki, S Fukatsu
Applied physics letters 66 (8), 953-955, 1995
1041995
Realization of abrupt interfaces in Si/Ge superlattices by suppressing Ge surface segregation with submonolayer of Sb
K Fujita, S Fukatsu, H Yaguchi, T Igarashi, Y Shiraki, R Ito
Japanese journal of applied physics 29 (11A), L1981, 1990
991990
Time‐resolved D‐band luminescence in strain‐relieved SiGe/Si
S Fukatsu, Y Mera, M Inoue, K Maeda, H Akiyama, H Sakaki
Applied physics letters 68 (14), 1889-1891, 1996
931996
Surface segregation of In atoms and its influence on the quantized levels in InGaAs/GaAs quantum wells
K Muraki, S Fukatsu, Y Shiraki, R Ito
Journal of crystal growth 127 (1-4), 546-549, 1993
891993
SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen
S Fukatsu, Y Ishikawa, T Saito, N Shibata
Applied physics letters 72 (26), 3485-3487, 1998
881998
Spectral blue shift of photoluminescence in strained‐layer Si1−xGex/Si quantum well structures grown by gas‐source Si molecular beam epitaxy
S Fukatsu, H Yoshida, A Fujiwara, Y Takahashi, Y Shiraki, R Ito
Applied physics letters 61 (7), 804-806, 1992
871992
Optical anisotropy in wire‐geometry SiGe layers grown by gas‐source selective epitaxial growth technique
N Usami, T Mine, S Fukatsu, Y Shiraki
Applied physics letters 64 (9), 1126-1128, 1994
791994
SiGe-on-insulator substrate using SiGe alloy grown Si (001)
Y Ishikawa, N Shibata, S Fukatsu
Applied physics letters 75 (7), 983-985, 1999
661999
Enhancement of radiative recombination in Si‐based quantum wells with neighboring confinement structure
N Usami, F Issiki, DK Nayak, Y Shiraki, S Fukatsu
Applied physics letters 67 (4), 524-526, 1995
641995
Observation of deep‐level‐free band edge luminescence and quantum confinement in strained Si1−xGex/Si single quantum well structures grown by solid …
N Usami, S Fukatsu, Y Shiraki
Applied physics letters 61 (14), 1706-1708, 1992
631992
Band‐edge photoluminescence of SiGe/strained‐Si/SiGe type‐II quantum wells on Si (100)
DK Nayak, N Usami, S Fukatsu, Y Shiraki
Applied physics letters 63 (25), 3509-3511, 1993
591993
Realization of crescent‐shaped SiGe quantum wire structures on a V‐groove patterned Si substrate by gas‐source Si molecular beam epitaxy
N Usami, T Mine, S Fukatsu, Y Shiraki
Applied physics letters 63 (20), 2789-2791, 1993
591993
Involvement of the topmost Ge layer in the Ge surface segregation during Si/Ge heterostructure formation
K Fujita, S Fukatsu, H Yaguchi, Y Shiraki, R Ito
Applied physics letters 59 (18), 2240-2241, 1991
581991
Resistance and resistivity of two dimensional electron gas at high magnetic fields
S Komiyama, H Nii, M Ohsaw, S Fukatsu, Y Shiraki, R Itoh, H Toyoshima
Solid state communications 80 (3), 157-163, 1991
581991
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