Ultra-low power Hf 0.5 Zr 0.5 O 2 based ferroelectric tunnel junction synapses for hardware neural network applications L Chen, TY Wang, YW Dai, MY Cha, H Zhu, QQ Sun, SJ Ding, P Zhou, ... Nanoscale 10 (33), 15826-15833, 2018 | 190 | 2018 |
Three-dimensional nanoscale flexible memristor networks with ultralow power for information transmission and processing application TY Wang, JL Meng, MY Rao, ZY He, L Chen, H Zhu, QQ Sun, SJ Ding, ... Nano letters 20 (6), 4111-4120, 2020 | 152 | 2020 |
Integrated in-sensor computing optoelectronic device for environment-adaptable artificial retina perception application J Meng, T Wang, H Zhu, L Ji, W Bao, P Zhou, L Chen, QQ Sun, DW Zhang Nano Letters 22 (1), 81-89, 2021 | 136 | 2021 |
Ultralow power wearable heterosynapse with photoelectric synergistic modulation TY Wang, JL Meng, ZY He, L Chen, H Zhu, QQ Sun, SJ Ding, P Zhou, ... Advanced Science 7 (8), 1903480, 2020 | 124 | 2020 |
Synthesis and electrochemical properties of Co3O4-rGO/CNTs composites towards highly sensitive nitrite detection Z Zhao, J Zhang, W Wang, Y Sun, P Li, J Hu, L Chen, W Gong Applied Surface Science 485, 274-282, 2019 | 98 | 2019 |
Reconfigurable optoelectronic memristor for in-sensor computing applications TY Wang, JL Meng, QX Li, ZY He, H Zhu, L Ji, QQ Sun, L Chen, ... Nano Energy 89, 106291, 2021 | 95 | 2021 |
Synthesis and gas sensing properties of NiO/SnO2 hierarchical structures toward ppb-level acetone detection J Hu, J Yang, W Wang, Y Xue, Y Sun, P Li, K Lian, W Zhang, L Chen, ... Materials Research Bulletin 102, 294-303, 2018 | 93 | 2018 |
The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility W Yang, QQ Sun, Y Geng, L Chen, P Zhou, SJ Ding, DW Zhang Scientific reports 5 (1), 11921, 2015 | 92 | 2015 |
Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics T Wang, J Meng, X Zhou, Y Liu, Z He, Q Han, Q Li, J Yu, Z Li, Y Liu, H Zhu, ... Nature Communications 13 (1), 7432, 2022 | 87 | 2022 |
Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications JL Meng, TY Wang, ZY He, L Chen, H Zhu, L Ji, QQ Sun, SJ Ding, WZ Bao, ... Materials Horizons 8 (2), 538-546, 2021 | 87 | 2021 |
A two-dimensional semiconductor transistor with boosted gate control and sensing ability J Xu, L Chen, YW Dai, Q Cao, QQ Sun, SJ Ding, H Zhu, DW Zhang Science advances 3 (5), e1602246, 2017 | 84 | 2017 |
Resistive Switching and Synaptic Behaviors of TaN/Al2O3/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles DT Wang, YW Dai, J Xu, L Chen, QQ Sun, P Zhou, PF Wang, SJ Ding, ... IEEE Electron Device Letters 37 (7), 878-881, 2016 | 81 | 2016 |
A Dual‐Gate MoS2 Photodetector Based on Interface Coupling Effect F Liao, J Deng, X Chen, Y Wang, X Zhang, J Liu, H Zhu, L Chen, Q Sun, ... Small 16 (1), 1904369, 2020 | 80 | 2020 |
Gas sensing devices based on two-dimensional materials: a review B Wang, Y Gu, L Chen, L Ji, H Zhu, Q Sun Nanotechnology 33 (25), 252001, 2022 | 72 | 2022 |
Flexible electronic synapses for face recognition application with multimodulated conductance states TY Wang, ZY He, H Liu, L Chen, H Zhu, QQ Sun, SJ Ding, P Zhou, ... ACS applied materials & interfaces 10 (43), 37345-37352, 2018 | 72 | 2018 |
Enhancement of Resistive Switching Characteristics in -Based RRAM With Embedded Ruthenium Nanocrystals L Chen, HY Gou, QQ Sun, P Zhou, HL Lu, PF Wang, SJ Ding, DW Zhang IEEE electron device letters 32 (6), 794-796, 2011 | 72 | 2011 |
Flexible 3D memristor array for binary storage and multi‐states neuromorphic computing applications TY Wang, JL Meng, L Chen, H Zhu, QQ Sun, SJ Ding, WZ Bao, DW Zhang InfoMat 3 (2), 212-221, 2021 | 71 | 2021 |
Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment X Wang, TB Zhang, W Yang, H Zhu, L Chen, QQ Sun, DW Zhang Applied Physics Letters 110 (5), 2017 | 64 | 2017 |
Highly Uniform Bipolar Resistive Switching With Buffer Layer in Robust NbAlO-Based RRAM L Chen, Y Xu, QQ Sun, H Liu, JJ Gu, SJ Ding, DW Zhang IEEE electron device letters 31 (4), 356-358, 2010 | 63 | 2010 |
Synthesis of large-scale few-layer PtS2 films by chemical vapor deposition D Zhao, S Xie, Y Wang, H Zhu, L Chen, Q Sun, DW Zhang AIP Advances 9 (2), 2019 | 62 | 2019 |