| Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure MA Reed, JN Randall, RJ Aggarwal, RJ Matyi, TM Moore, AE Wetsel Physical review letters 60 (6), 535, 1988 | 1539 | 1988 |
| Characteristics of micromachined switches at microwave frequencies C Goldsmith, J Randall, S Eshelman, TH Lin, D Denniston, S Chen, ... 1996 IEEE MTT-S International Microwave Symposium Digest 2, 1141-1144, 1996 | 350 | 1996 |
| Grated landing area to eliminate sticking of micro-mechanical devices DJ Weaver, JN Randall US Patent 5,665,997, 1997 | 325 | 1997 |
| A technique for the determination of stress in thin films EI Bromley, JN Randall, DC Flanders, RW Mountain Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1983 | 258 | 1983 |
| Realization of a three‐terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor MA Reed, WR Frensley, RJ Matyi, JN Randall, AC Seabaugh Applied physics letters 54 (11), 1034-1036, 1989 | 168 | 1989 |
| Recessed etch RF micro-electro-mechanical switch JN Randall, MY Kao US Patent 6,100,477, 2000 | 146 | 2000 |
| Optical proximity correction JN Randall, TJ Aton, SR Palmer US Patent 6,634,018, 2003 | 91 | 2003 |
| Self‐developing resist with submicrometer resolution and processing stability MW Geis, JN Randall, TF Deutsch, PD DeGraff, KE Krohn, LA Stern Applied Physics Letters 43 (1), 74-76, 1983 | 89 | 1983 |
| Nanoelectronics: Fanciful physics or real devices? JN Randall, MA Reed, GA Frazier Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1989 | 82 | 1989 |
| Atomic precision lithography on Si JN Randall, JW Lyding, S Schmucker, JR Von Ehr, J Ballard, R Saini, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 77 | 2009 |
| Controlling the atomic layer deposition of titanium dioxide on silicon: dependence on surface termination S McDonnell, RC Longo, O Seitz, JB Ballard, G Mordi, D Dick, JHG Owen, ... The Journal of Physical Chemistry C 117 (39), 20250-20259, 2013 | 76 | 2013 |
| Lateral resonant tunneling device having gate electrode aligned with tunneling barriers D Jovanovic, JN Randall US Patent 5,504,347, 1996 | 68 | 1996 |
| Field-directed sputter sharpening for tailored probe materials and atomic-scale lithography SW Schmucker, N Kumar, JR Abelson, SR Daly, GS Girolami, MR Bischof, ... Nature communications 3 (1), 935, 2012 | 64 | 2012 |
| Selectivity of metal oxide atomic layer deposition on hydrogen terminated and oxidized Si (001)-(2× 1) surface RC Longo, S McDonnell, D Dick, RM Wallace, YJ Chabal, JHG Owen, ... Journal of Vacuum Science & Technology B 32 (3), 2014 | 59 | 2014 |
| Pseudomorphic bipolar quantum resonant-tunneling transistor AC Seabaugh, WR Frensley, JN Randall, MA Reed, DL Farrington, ... IEEE Transactions on Electron Devices 36 (10), 2328-2334, 1989 | 59 | 1989 |
| Dual-mask model-based proximity correction for high-performance 0.10-um CMOS process SR Palmer, ME Mason, JN Randall, T Aton, K Kim, AV Tritchkov, J Burdorf, ... 20th Annual BACUS Symposium on Photomask Technology 4186, 921-932, 2001 | 56 | 2001 |
| Variable-threshold resist models for lithography simulation J Randall, KG Ronse, T Marschner, AM Goethals, M Ercken Optical Microlithography XII 3679, 176-182, 1999 | 55 | 1999 |
| Co-integrated resonant tunneling and heterojunction bipolar transistor full adder AC Seabaugh, AH Taddiken, EA Beam, JN Randall, YC Kao, B Newell Proceedings of IEEE International Electron Devices Meeting, 419-422, 1993 | 50 | 1993 |
| High resolution ion beam lithography at large gaps using stencil masks JN Randall, DC Flanders, NP Economou, JP Donnelly, EI Bromley Applied Physics Letters 42 (5), 457-459, 1983 | 48 | 1983 |
| Nitrocellulose as a self‐developing resist with submicrometer resolution and processing stability MW Geis, JN Randall, TF Deutsch, NN Efremow, JP Donnelly, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1983 | 45 | 1983 |
