| Hopping in exponential band tails D Monroe Physical review letters 54 (2), 146, 1985 | 725 | 1985 |
| Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si EA Fitzgerald, YH Xie, D Monroe, PJ Silverman, JM Kuo, AR Kortan, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 678 | 1992 |
| Decay of ultraviolet‐induced fiber Bragg gratings T Erdogan, V Mizrahi, PJ Lemaire, D Monroe Journal of applied physics 76 (1), 73-80, 1994 | 649 | 1994 |
| Looking for chinks in the armor of bacterial biofilms D Monroe PLoS biology 5 (11), e307, 2007 | 551 | 2007 |
| Dialogue on reverse‐engineering assessment and methods: the DREAM of high‐throughput pathway inference G Stolovitzky, DON Monroe, A Califano Annals of the New York Academy of Sciences 1115 (1), 1-22, 2007 | 448 | 2007 |
| Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs SH Oh, D Monroe, JM Hergenrother IEEE electron device letters 21 (9), 445-447, 2000 | 447 | 2000 |
| Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy YJ Mii, YH Xie, EA Fitzgerald, D Monroe, FA Thiel, BE Weir, LC Feldman Applied Physics Letters 59 (13), 1611-1613, 1991 | 354 | 1991 |
| The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 260* | 1999 |
| Very high mobility two‐dimensional hole gas in Si/GexSi1− x/Ge structures grown by molecular beam epitaxy YH Xie, D Monroe, EA Fitzgerald, PJ Silverman, FA Thiel, GP Watson Applied physics letters 63 (16), 2263-2264, 1993 | 254 | 1993 |
| Ultra-thin gate dielectrics: They break down, but do they fail? BE Weir, PJ Silverman, D Monroe, KS Krisch, MA Alam, GB Alers, ... International Electron Devices Meeting. IEDM Technical Digest, 73-76, 1997 | 246 | 1997 |
| Neuromorphic computing gets ready for the (really) big time D Monroe Communications of the ACM 57 (6), 13-15, 2014 | 230 | 2014 |
| Semiconductor heterostructure devices with strained semiconductor layers D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie US Patent 5,442,205, 1995 | 228 | 1995 |
| Comparison of mobility‐limiting mechanisms in high‐mobility Si1−xGex heterostructures D Monroe, YH Xie, EA Fitzgerald, PJ Silverman, GP Watson Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 143 | 1993 |
| New universality at the magnetic field driven insulator to integer quantum Hall effect transitions SH Song, D Shahar, DC Tsui, YH Xie, D Monroe Physical review letters 78 (11), 2200, 1997 | 120 | 1997 |
| Fabrication of high mobility two‐dimensional electron and hole gases in GeSi/Si YH Xie, EA Fitzgerald, D Monroe, PJ Silverman, GP Watson Journal of applied physics 73 (12), 8364-8370, 1993 | 111 | 1993 |
| Exactly exponential band tail in a glassy semiconductor D Monroe, MA Kastner Physical Review B 33 (12), 8881, 1986 | 111 | 1986 |
| Process for fabricating vertical transistors JM Hergenrother, DP Monroe, GR Weber US Patent 6,197,641, 2001 | 110 | 2001 |
| CMOS integrated circuit having vertical transistors and a process for fabricating same JM Hergenrother, DP Monroe US Patent 6,653,181, 2003 | 105 | 2003 |
| Experimental evidence for a two-dimensional quantized Hall insulator M Hilke, D Shahar, SH Song, DC Tsui, YH Xie, D Monroe Nature 395 (6703), 675-677, 1998 | 105 | 1998 |
| Quantum leap D Monroe Communications of the ACM 62 (1), 10-12, 2018 | 99 | 2018 |
Ya-Hong XieUniversity of California Los Angeles, Materials Sciences & Engineering在 ucla.edu 的电子邮件经过验证
