| Far-infrared intersubband photodetectors based on double-step III-nitride quantum wells FF Sudradjat, W Zhang, J Woodward, H Durmaz, TD Moustakas, R Paiella Applied Physics Letters 100 (24), 2012 | 77 | 2012 |
| Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations E Francesco Pecora, W Zhang, A Yu Nikiforov, L Zhou, DJ Smith, J Yin, ... Applied Physics Letters 100 (6), 2012 | 66 | 2012 |
| Sub-250 nm light emission and optical gain in AlGaN materials E Francesco Pecora, W Zhang, AY Nikiforov, J Yin, R Paiella, L Dal Negro, ... Journal of Applied Physics 113 (1), 2013 | 37 | 2013 |
| Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures F Sudradjat, W Zhang, K Driscoll, Y Liao, A Bhattacharyya, C Thomidis, ... Journal of Applied Physics 108 (10), 2010 | 32 | 2010 |
| Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency W Zhang, AY Nikiforov, C Thomidis, J Woodward, H Sun, CK Kao, ... Journal of Vacuum Science & Technology B 30 (2), 2012 | 29 | 2012 |
| Polarization properties of deep-ultraviolet optical gain in Al-rich AlGaN structures EF Pecora, W Zhang, J Yin, R Paiella, L Dal Negro, TD Moustakas Applied Physics Express 5 (3), 032103, 2012 | 20 | 2012 |
| Milliwatt power AlGaN‐based deep ultraviolet light emitting diodes by plasma‐assisted molecular beam epitaxy Y Liao, C Thomidis, C Kao, A Moldawer, W Zhang, Y Chang, AY Nikiforov, ... physica status solidi (RRL)–Rapid Research Letters 4 (1‐2), 49-51, 2010 | 11 | 2010 |
| Sequential tunneling transport in GaN/AlGaN quantum cascade structures FF Sudradjat, W Zhang, K Driscoll, Y Liao, A Bhattacharyya, C Thomidis, ... physica status solidi c 9 (3‐4), 588-591, 2012 | 6 | 2012 |
| Ultraviolet light emitting device doped with boron Y Liao, DA Collins, W Zhang US Patent 9,876,143, 2018 | 3 | 2018 |
| UV-LED liquid monitoring and treatment apparatus and method Y Liao, RC Walker, D Collins, W Zhang US Patent 10,669,166, 2020 | 2 | 2020 |
| Ultraviolet light emitting device doped with boron Y Liao, DA Collins, W Zhang US Patent 10,326,054, 2019 | 1 | 2019 |
| Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges W Zhang Boston University, 2014 | 1 | 2014 |
| III-nitride terahertz photodetectors for the Reststrahlen gap of intersubband optoelectronics R Paiella, H Durmaz, FF Sudradjat, D Nothern, GC Brummer, W Zhang, ... Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and …, 2017 | | 2017 |
| Sub-250nm room temperature optical gain from AlGaN materials with strong compositional fluctuations E Pecora, W Zhang, H Sun, A Nikiforov, J Yin, R Paiella, T Moustakas, ... APS March Meeting Abstracts 2013, V1. 109, 2013 | | 2013 |
| Evidence of deep ultraviolet amplified spontaneous emission in electron beam pumped AlGaN multiple-quantum-well-based structures AY Nikiforov, W Zhang, J Woodward, J Yin, R Paiella, KF Ludwig, ... 2012 Lester Eastman Conference on High Performance Devices (LEC), 1-4, 2012 | | 2012 |
| Sub-250nm room temperature optical gain from AlGaN/AlN multiple quantum wells structures EF Pecora, W Zhang, L Zhou, DJ Smith, J Yin, R Paiella, L Dal Negro, ... CLEO: Science and Innovations, CTh3D. 5, 2012 | | 2012 |
| Room temperature low threshold stimulated emission of electron beam-pumped AlGaN-based deep UV laser structures emitting below 250 nm A Nikiforov, W Zhang, J Woodward, J Yin, E Pecora, L Zhou, L Dal Negro, ... APS March Meeting Abstracts 2012, L28. 008, 2012 | | 2012 |
| Growth and characterization of deep ultraviolet emitting AlGaN structures on SiC substrates W Zhang, AY Nikiforov, C Thomidis, A Moldawer, H Sun, WF Hug, ... CLEO: Science and Innovations, JTuD3, 2011 | | 2011 |
Theodore D MoustakasBoston University, Electrical and Computer Engineering Department在 bu.edu 的电子邮件经过验证
