| Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90 misfit dislocations A Jallipalli, G Balakrishnan, SH Huang, TJ Rotter, K Nunna, BL Liang, ... Nanoscale research letters 4, 1458-1462, 2009 | 64 | 2009 |
| GaSb/GaAs type-II quantum dots grown by droplet epitaxy B Liang, A Lin, N Pavarelli, C Reyner, J Tatebayashi, K Nunna, J He, ... Nanotechnology 20 (45), 455604, 2009 | 53 | 2009 |
| Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique K Nunna, S Tan, C Reyner, A Marshall, B Liang, A Jallipalli, J David, ... Photonics Technology Letters, IEEE 24 (3), 218-220, 2012 | 43 | 2012 |
| Strain-balanced InAs/InAs1− xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates EH Steenbergen, K Nunna, L Ouyang, B Ullrich, DL Huffaker, DJ Smith, ... Journal of Vacuum Science & Technology B 30 (2), 2012 | 41 | 2012 |
| Characterization of GaSb/GaAs interfacial misfit arrays using x-ray diffraction CJ Reyner, J Wang, K Nunna, A Lin, B Liang, MS Goorsky, DL Huffaker Applied Physics Letters 99 (23), 2011 | 39 | 2011 |
| Band Alignment Tailoring of InAs1−xSbx/GaAs Quantum Dots: Control of Type I to Type II Transition J He, CJ Reyner, BL Liang, K Nunna, DL Huffaker, N Pavarelli, ... Nano letters 10 (8), 3052-3056, 2010 | 36 | 2010 |
| Nitrogen incorporation and optical studies of GaAsSbN∕ GaAs single quantum well heterostructures K Nunna, S Iyer, L Wu, J Li, S Bharatan, X Wei, RT Senger, KK Bajaj Journal of applied physics 102 (5), 2007 | 34 | 2007 |
| Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures YI Mazur, VG Dorogan, GJ Salamo, GG Tarasov, BL Liang, CJ Reyner, ... Applied Physics Letters 100 (3), 2012 | 33 | 2012 |
| Annealing effects on the temperature dependence of photoluminescence characteristics of GaAsSbN single-quantum wells J Li, S Iyer, S Bharatan, L Wu, K Nunna, W Collis, KK Bajaj, K Matney Journal of applied physics 98 (1), 2005 | 32 | 2005 |
| Monolithically integrated III-Sb-based laser diodes grown on miscut Si substrates J Tatebayashi, A Jallipalli, MN Kutty, S Huang, K Nunna, G Balakrishnan, ... IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 716-723, 2009 | 28 | 2009 |
| The effects of annealing on the structural, optical, and vibrational properties of lattice-matched GaAsSbN∕ GaAs grown by molecular beam epitaxy S Bharatan, S Iyer, K Nunna, WJ Collis, K Matney, J Reppert, AM Rao, ... Journal of Applied Physics 102 (2), 2007 | 27 | 2007 |
| MBE growth and properties of GaAsSbN/GaAs single quantum wells L Wu, S Iyer, K Nunna, J Li, S Bharatan, W Collis, K Matney Journal of crystal growth 279 (3-4), 293-302, 2005 | 27 | 2005 |
| Structural properties of InAs/InAs1–xSbx type-II superlattices grown by molecular beam epitaxy L Ouyang, EH Steenbergen, YH Zhang, K Nunna, DL Huffaker, DJ Smith Journal of Vacuum Science & Technology B 30 (2), 2012 | 19 | 2012 |
| Baseline 1300 nm dilute nitride VCSELs M Gębski, D Dontsova, N Haghighi, K Nunna, R Yanka, A Johnson, ... OSA Continuum 3 (7), 1952-1957, 2020 | 17 | 2020 |
| Compensation of interfacial states located inside the “buffer-free” GaSb/GaAs (001) heterojunction via δ-doping A Jallipalli, K Nunna, MN Kutty, G Balakrishnan, GB Lush, LR Dawson, ... Applied Physics Letters 95 (7), 2009 | 16 | 2009 |
| Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs R Yanka, S Chung, K Nunna, R Pelzel, H Williams US Patent 9,768,339, 2017 | 11 | 2017 |
| Electronic characteristics of the interfacial states embedded in “buffer-free” GaSb/GaAs (001) heterojunctions A Jallipalli, K Nunna, MN Kutty, G Balakrishnan, LR Dawson, DL Huffaker Applied Physics Letters 95 (20), 2009 | 11 | 2009 |
| Optical Properties of Strain‐balanced InAs/InAs 1‐x Sb x Type‐II Superlattices EH Steenbergen, Y Huang, JH Ryou, RD Dupuis, K Nunna, DL Huffaker, ... AIP Conference Proceedings 1416 (1), 122-125, 2011 | 8 | 2011 |
| Optical studies of molecular beam epitaxy grown GaAsSbN∕ GaAs single quantum well structures K Nunna, S Iyer, L Wu, S Bharatan, J Li, KK Bajaj, X Wei, RT Senger Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 8 | 2007 |
| Growth and properties of lattice matched GaAsSbN epilayer on GaAs for solar cell applications S Bharatan, S Iyer, K Matney, WJ Collis, K Nunna, J Li, L Wu, K McGuire, ... MRS Online Proceedings Library (OPL) 891, 0891-EE10-36, 2005 | 8 | 2005 |
Kevin MatneyJordan Valley Semiconductor在 jvsemi.com 的电子邮件经过验证
