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Robert Gowers
Robert Gowers
在 hu-berlin.de 的电子邮件经过验证 - 首页
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SPICE compact modeling of bipolar/unipolar memristor switching governed by electrical thresholds
F García-Redondo, RP Gowers, A Crespo-Yepes, M López-Vallejo, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 63 (8), 1255-1264, 2016
742016
High-voltage organic thin-film transistors on flexible and curved surfaces
MA Smith, RP Gowers, A Shih, AI Akinwande
IEEE Transactions on Electron Devices 62 (12), 4213-4219, 2015
412015
α-Synuclein aggregates increase the conductance of substantia nigra dopamine neurons, an effect partly reversed by the KATP channel inhibitor glibenclamide
E Hill, R Gowers, MJE Richardson, MJ Wall
eneuro 8 (1), 2021
222021
Switching kinetics of SiC resistive memory for harsh environments
KA Morgan, J Fan, R Huang, L Zhong, RP Gowers, L Jiang, CH De Groot
AIP Advances 5 (7), 2015
222015
Active counter electrode in a-SiC electrochemical metallization memory
KA Morgan, J Fan, R Huang, L Zhong, R Gowers, JY Ou, L Jiang, ...
Journal of Physics D: Applied Physics 50 (32), 325102, 2017
82017
Microstructure and electrical properties of co-sputtered Cu embedded amorphous SiC
J Fan, L Jiang, L Zhong, RP Gowers, KA Morgan, CH de Groot
Materials Letters 178, 60-63, 2016
52016
Low-rate firing limit for neurons with axon, soma and dendrites driven by spatially distributed stochastic synapses
RP Gowers, Y Timofeeva, MJE Richardson
PLoS Computational Biology 16 (4), e1007175, 2020
42020
How neuronal morphology impacts the synchronisation state of neuronal networks
RP Gowers, S Schreiber
PLOS Computational Biology 20 (3), e1011874, 2024
22024
Upcrossing-rate dynamics for a minimal neuron model receiving spatially distributed synaptic drive
RP Gowers, MJE Richardson
Physical Review Research 5 (2), 023095, 2023
22023
Low-rate firing limit for neurons with axon, soma and dendrites driven by spatially distributed stochastic synapses Supporting Information
RP Gowers, Y Timofeeva, MJE Richardson
2020
Fluctuation-driven firing in spatially extended neuron models
R Gowers
University of Warwick, 2019
2019
Dataset for Active Counter Electrode in a-SiC Electrochemical Metallization Memory
K Morgan, J Fan, R Huang, L Zhong, R Gowers, JY Ou, L Jiang, ...
University of Southampton, 2017
2017
Switching mechanisms of Cu/SiC resistive memories with W and Au counter electrodes
KA Morgan, J Fan, RP Gowers, L Jiang, CH de Groot
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
2016
Dataset for Switching kinetics of SiC resistive memory for harsh environments
K Morgan, J Fan, R Huang, L Zhong, R Gowers, L Jiang, C De Groot
University of Southampton, 2015
2015
Properties of SiC resistive memory for harsh environments
K Morgan, J Fan, R Huang, L Zhong, R Gowers, L Jiang, C De Groot
2015
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