| Composition dependence of photoluminescence of GaAs1− xBix alloys X Lu, DA Beaton, RB Lewis, T Tiedje, Y Zhang Applied Physics Letters 95 (4), 2009 | 221 | 2009 |
| Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1− xBix X Lu, DA Beaton, RB Lewis, T Tiedje, MB Whitwick Applied Physics Letters 92 (19), 2008 | 212 | 2008 |
| Clustering effects in Ga (AsBi) S Imhof, A Thränhardt, A Chernikov, M Koch, NS Köster, K Kolata, ... Applied Physics Letters 96 (13), 2010 | 149 | 2010 |
| Kinetically limited growth of GaAsBi by molecular-beam epitaxy AJ Ptak, R France, DA Beaton, K Alberi, J Simon, A Mascarenhas, ... Journal of Crystal Growth 338 (1), 107-110, 2012 | 135 | 2012 |
| GaAs1-xBix light emitting diodes RB Lewis, DA Beaton, X Lu, T Tiedje Journal of Crystal Growth 311 (7), 1872-1875, 2009 | 107 | 2009 |
| Recombination mechanisms and band alignment of GaAs1− xBix/GaAs light emitting diodes N Hossain, IP Marko, SR Jin, K Hild, SJ Sweeney, RB Lewis, DA Beaton, ... Applied Physics Letters 100 (5), 2012 | 76 | 2012 |
| Temperature dependence of hole mobility in GaAs1− xBix alloys DA Beaton, RB Lewis, M Masnadi-Shirazi, T Tiedje journal of applied physics 108 (8), 2010 | 67 | 2010 |
| Surface reconstructions during growth of GaAs1− xBix alloys by molecular beam epitaxy M Masnadi-Shirazi, DA Beaton, RB Lewis, X Lu, T Tiedje Journal of crystal growth 338 (1), 80-84, 2012 | 62 | 2012 |
| Deep level defects in n-type GaAsBi and GaAs grown at low temperatures PM Mooney, KP Watkins, Z Jiang, AF Basile, RB Lewis, V Bahrami-Yekta, ... Journal of Applied Physics 113 (13), 2013 | 53 | 2013 |
| Bismuth incorporation in GaAs1–xBix grown by molecular beam epitaxy with in‐situ light scattering EC Young, MB Whitwick, T Tiedje, DA Beaton physica status solidi c 4 (5), 1707-1710, 2007 | 40 | 2007 |
| Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells MK Shakfa, D Kalincev, X Lu, SR Johnson, DA Beaton, T Tiedje, ... Journal of Applied Physics 114 (16), 2013 | 39 | 2013 |
| Amber-green light-emitting diodes using order-disorder AlxIn1− xP heterostructures TM Christian, DA Beaton, K Mukherjee, K Alberi, EA Fitzgerald, ... Journal of Applied Physics 114 (7), 2013 | 38 | 2013 |
| Luminescence dynamics in ga (asbi) S Imhof, C Wagner, A Thränhardt, A Chernikov, M Koch, NS Köster, ... Applied Physics Letters 98 (16), 2011 | 34 | 2011 |
| Shubnikov-de Haas measurement of electron effective mass in GaAs1− xBix B Fluegel, RN Kini, AJ Ptak, D Beaton, K Alberi, A Mascarenhas Applied Physics Letters 99 (16), 2011 | 33 | 2011 |
| Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant AJ Ptak, DA Beaton, A Mascarenhas Journal of crystal growth 351 (1), 122-125, 2012 | 31 | 2012 |
| Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors B Fluegel, AV Mialitsin, DA Beaton, JL Reno, A Mascarenhas Nature Communications 6 (1), 7136, 2015 | 28 | 2015 |
| Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates K Mukherjee, DA Beaton, T Christian, EJ Jones, K Alberi, A Mascarenhas, ... Journal of applied physics 113 (18), 2013 | 27 | 2013 |
| Insight into the epitaxial growth of high optical quality GaAs1–xBix DA Beaton, A Mascarenhas, K Alberi Journal of Applied Physics 118 (23), 2015 | 24 | 2015 |
| Evidence of two disorder scales in Ga (AsBi) S Imhof, C Wagner, A Chernikov, M Koch, K Kolata, NS Köster, ... physica status solidi (b) 248 (4), 851-854, 2011 | 22 | 2011 |
| Deep level defects in GaAs1− xBix/GaAs heterostructures Z Jiang, DA Beaton, RB Lewis, AF Basile, T Tiedje, PM Mooney Semiconductor science and technology 26 (5), 055020, 2011 | 20 | 2011 |
