Rate equation analysis of efficiency droop in InGaN light-emitting diodes HY Ryu, HS Kim, JI Shim Applied Physics Letters 95 (8), 2009 | 246 | 2009 |
Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes HY Ryu, IG Choi, HS Choi, JI Shim Applied Physics Express 6 (6), 062101, 2013 | 232 | 2013 |
Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures JT Oh, SY Lee, YT Moon, JH Moon, S Park, KY Hong, KY Song, C Oh, ... Optics express 26 (9), 11194-11200, 2018 | 182 | 2018 |
Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material HY Ryu, DS Shin, JI Shim Applied Physics Letters 100 (13), 2012 | 129 | 2012 |
Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence DS Shin, DP Han, JY Oh, JI Shim Applied Physics Letters 100 (15), 2012 | 127 | 2012 |
Effect of current spreading on the efficiency droop of InGaN light-emitting diodes HY Ryu, JI Shim Optics Express 19 (4), 2886-2894, 2011 | 125 | 2011 |
Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation J Yun, JI Shim, H Hirayama Applied Physics Express 8 (2), 022104, 2015 | 96 | 2015 |
Efficiency droop in AlGaInP and GaInN light-emitting diodes JI Shim, DP Han, H Kim, DS Shin, GB Lin, DS Meyaard, Q Shan, J Cho, ... Applied Physics Letters 100 (11), 2012 | 92 | 2012 |
Lasing characteristics of 1.5 mu m GaInAsP-InP SCH-BIG-DR lasers JI Shim, K Komori, S Arai, I Arima, Y Suematsu, R Somchai IEEE journal of quantum electronics 27 (6), 1736-1745, 1991 | 91 | 1991 |
Measuring the internal quantum efficiency of light-emitting diodes: Towards accurate and reliable room-temperature characterization JI Shim, DS Shin Nanophotonics 7 (10), 1601-1615, 2018 | 90 | 2018 |
A method for current spreading analysis and electrode pattern design in light-emitting diodes S Hwang, J Shim IEEE Transactions on Electron Devices 55 (5), 1123-1128, 2008 | 89 | 2008 |
An explanation of efficiency droop in InGaN-based light emitting diodes: Saturated radiative recombination rate at randomly distributed In-rich active areas JI Shim, H Kim, DS Shin, HY Yoo Journal of the Korean Physical Society 58 (3), 503-508, 2011 | 79 | 2011 |
Reduction of effective linewidth enhancement factor alpha/sub eff/of DFB lasers with complex coupling coefficients K Kudo, JI Shim, K Komori, S Arai IEEE photonics technology letters 4 (6), 531-534, 1992 | 72 | 1992 |
Nonradiative recombination mechanisms in InGaN/GaN-based light-emitting diodes investigated by temperature-dependent measurements DP Han, DG Zheng, CH Oh, H Kim, JI Shim, DS Shin, KS Kim Applied Physics Letters 104 (15), 2014 | 71 | 2014 |
Conduction mechanisms of leakage currents in InGaN/GaN-based light-emitting diodes DP Han, CH Oh, H Kim, JI Shim, KS Kim, DS Shin IEEE Transactions on Electron Devices 62 (2), 587-592, 2014 | 64 | 2014 |
Analog characterization of low-voltage MQW traveling-wave electroabsorption modulators B Liu, J Shim, YJ Chiu, A Keating, J Piprek, JE Bowers Journal of Lightwave Technology 21 (12), 3011, 2003 | 64 | 2003 |
Refractive index and loss changes produced by current injection in InGaAs (P)-InGaAsP multiple quantum-well (MQW) waveguides JI Shim, M Yamaguchi, P Delansay, M Kitamura IEEE Journal of Selected Topics in Quantum Electronics 1 (2), 408-415, 1995 | 62 | 1995 |
High-performance blue InGaN laser diodes with single-quantum-well active layers HY Ryu, KH Ha, SN Lee, T Jang, JK Son, HS Paek, YJ Sung, HK Kim, ... IEEE Photonics technology letters 19 (21), 1717-1719, 2007 | 57 | 2007 |
Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes KS Kim, DP Han, HS Kim, JI Shim Applied Physics Letters 104 (9), 2014 | 56 | 2014 |
Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics HY Ryu, KH Ha, JH Chae, KS Kim, JK Son, OH Nam, YJ Park, JI Shim Applied physics letters 89 (17), 2006 | 55 | 2006 |