Vertically self-organized InAs quantum box islands on GaAs (100) Q Xie, A Madhukar, P Chen, NP Kobayashi Physical review letters 75 (13), 2542, 1995 | 1727 | 1995 |
Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1− xAs on GaAs (100) S Guha, A Madhukar, KC Rajkumar Applied Physics Letters 57 (20), 2110-2112, 1990 | 881 | 1990 |
High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Si O 2 and the Si-Si O 2 Interface FJ Grunthaner, PJ Grunthaner, RP Vasquez, BF Lewis, J Maserjian, ... Physical Review Letters 43 (22), 1683, 1979 | 435 | 1979 |
Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high‐resolution XPS FJ Grunthaner, PJ Grunthaner, RP Vasquez, BF Lewis, J Maserjian, ... Journal of Vacuum Science and Technology 16 (5), 1443-1453, 1979 | 408 | 1979 |
Collective modes of spatially separated, two-component, two-dimensional plasma in solids SD Sarma, A Madhukar Physical Review B 23 (2), 805, 1981 | 376 | 1981 |
Nature of strained InAs three‐dimensional island formation and distribution on GaAs (100) A Madhukar, Q Xie, P Chen, A Konkar Applied physics letters 64 (20), 2727-2729, 1994 | 325 | 1994 |
Excited states and energy relaxation in stacked InAs/GaAs quantum dots R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ... Physical Review B 57 (15), 9050, 1998 | 321 | 1998 |
Enhanced polar exciton-LO-phonon interaction in quantum dots R Heitz, I Mukhametzhanov, O Stier, A Madhukar, D Bimberg Physical review letters 83 (22), 4654, 1999 | 320 | 1999 |
In situ, atomic force microscope studies of the evolution of InAs three‐dimensional islands on GaAs (001) NP Kobayashi, TR Ramachandran, P Chen, A Madhukar Applied physics letters 68 (23), 3299-3301, 1996 | 289 | 1996 |
High detectivity InAs quantum dot infrared photodetectors ET Kim, A Madhukar, Z Ye, JC Campbell Applied Physics Letters 84 (17), 3277-3279, 2004 | 272 | 2004 |
InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth Q Xie, P Chen, A Madhukar Applied physics letters 65 (16), 2051-2053, 1994 | 270 | 1994 |
Nanoparticle manipulation by mechanical pushing: underlying phenomena and real-time monitoring C Baur, A Bugacov, BE Koel, A Madhukar, N Montoya, TR Ramachandran, ... Nanotechnology 9 (4), 360, 1998 | 220 | 1998 |
Observation of reentrant 2D to 3D morphology transition in highly strained epitaxy: InAs on GaAs R Heitz, TR Ramachandran, A Kalburge, Q Xie, I Mukhametzhanov, ... Physical review letters 78 (21), 4071, 1997 | 214 | 1997 |
Independent manipulation of density and size of stress-driven self-assembled quantum dots I Mukhametzhanov, R Heitz, J Zeng, P Chen, A Madhukar Applied physics letters 73 (13), 1841-1843, 1998 | 207 | 1998 |
The nature of molecular beam epitaxial growth examined via computer simulations A Madhukar, SV Ghaisas Critical Reviews in Solid State and Materials Sciences 14 (1), 1-130, 1988 | 191 | 1988 |
Normal incidence InAs/AlxGa1− xAs quantum dot infrared photodetectors with undoped active region Z Chen, O Baklenov, ET Kim, I Mukhametzhanov, J Tie, A Madhukar, Z Ye, ... Journal of Applied Physics 89 (8), 4558-4563, 2001 | 187 | 2001 |
Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulations A Madhukar Surface Science 132 (1-3), 344-374, 1983 | 182 | 1983 |
Punctuated island growth: An approach to examination and control of quantum dot density, size, and shape evolution I Mukhametzhanov, Z Wei, R Heitz, A Madhukar Applied physics letters 75 (1), 85-87, 1999 | 172 | 1999 |
Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems SD Sarma, A Madhukar Physical Review B 22 (6), 2823, 1980 | 167 | 1980 |
Study of electron-phonon interaction and magneto-optical anomalies in two-dimensionally confined systems SD Sarma, A Madhukar Physical Review B 22 (6), 2823, 1980 | 167 | 1980 |