| Thermally Grown TiO2and Al2O3for GaN-Based MOS-HEMTs A Rawat, M Meer, V kumar Surana, N Bhardwaj, V Pendem, ... IEEE Transactions on Electron Devices 65 (9), 3725-3731, 2018 | 43 | 2018 |
| Realization of high quality silicon nitride deposition at low temperatures VK Surana, N Bhardwaj, A Rawat, Y Yadav, S Ganguly, D Saha Journal of Applied Physics 126 (11), 2019 | 30 | 2019 |
| Gate Current Reduction and Improved DC/RF Characteristics in GaN-Based MOS-HEMTs Using Thermally Grown TiO2 as a Dielectric A Rawat, VK Surana, M Meer, N Bhardwaj, S Ganguly, D Saha IEEE Transactions on Electron Devices 66 (6), 2557-2562, 2019 | 22 | 2019 |
| Interface dynamics in ohmic contact optimization on AlGaN/GaN heterostructure by the formation of TiN M Meer, A Rawat, K Takhar, S Ganguly, D Saha Microelectronic Engineering 219, 111144, 2020 | 9 | 2020 |
| Tensile strain and fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs A Rawat, VK Surana, S Ganguly, D Saha Solid-State Electronics 164, 107702, 2020 | 2 | 2020 |
| Possible Use of Wide Bandgap Semiconductor in Enhancement Mode Using p-Type Gate Dielectric M. Meer, Y. Yadav, A. Rawat, J. Jha, S. Ganguly, and D. Saha 13th International Conference on Nitride Semiconductors, Bellevue …, 2019 | | 2019 |
| High Quality SiNx Deposited by ICP-CVD for III-Nitride HEMTs", V. K. Surana, N. Bhardwaj, A. Rawat, Y. Yadav, S. Ganguly, and D. Saha International workshop on Nitride Semiconductors, Kanazawa, Japan, 2018 | | 2018 |
| Reduction in interface trap density and improvement in DC and RF performance using wet oxidation of AlGaN/GaN HEMTs M. Meer, A. Rawat, Y. Yadav, S. Ganguly, D. Saha International workshop on Nitride Semiconductors Kanazawa, Japan., 2018 | | 2018 |
| Interface Trap characterization of Thermally Grown TiO2 and Al2O3 Based MOS capacitors using Deep level Transient and Conductance Spectroscopy A. Rawat, V. K. Surana, M. Meer, S. Ganguly, D. Saha International workshop on Nitride Semiconductors, Kanazawa, Japan., 2018 | | 2018 |
| Effective Gate Insulation and Passivation of AlGaN/GaN HEMT by Thermally Grown TiO2 and Al2O3 A. Rawat, M. Meer, V. K. Surana, S. Ganguly, and D. Saha presented contributory Oral Talk in International Workshop on Physics of …, 2017 | | 2017 |
| Improved Characteristics for Thermally Grown TiO2 and Al2O3 Based MOS-HEMTs”, 12th International Conference on Nitride Semiconductors A. Rawat, V. K. Surana, Yogendra K. Yadav, Bhanu B. Upadhyay, Swaroop ... 12th International Conference on Nitride Semiconductors, Strasbourg, France, 2017 | | 2017 |
| Gate dielectrics for high performance AlGaN GaN based high electron mobility transistors A Rawat Mumbai, 0 | | |
Dr. Vivek kumar SuranaSenior Device Engineer, Micron Technology, Singapore在 iitb.ac.in 的电子邮件经过验证
