An ultralow-voltage energy-efficient level shifter M Lanuzza, F Crupi, S Rao, R De Rose, S Strangio, G Iannaccone IEEE Transactions on Circuits and Systems II: Express Briefs 64 (1), 61-65, 2016 | 107 | 2016 |
High-performance temperature sensor based on 4H-SiC Schottky diodes S Rao, G Pangallo, F Pezzimenti, F Della Corte Electron Device Letters, IEEE 36 (7), 720-722, 2015 | 85 | 2015 |
85–440 K temperature sensor based on a 4H-SiC Schottky diode S Rao, L Di Benedetto, G Pangallo, A Rubino, S Bellone, FG Della Corte IEEE Sensors Journal 16 (17), 6537-6542, 2016 | 59 | 2016 |
4H-SiC pin diode as Highly Linear Temperature Sensor S Rao, G Pangallo, FG Della Corte Electron Devices, IEEE Transactions on 63 (1), 414 - 418, 2016 | 58 | 2016 |
Use of amorphous silicon for active photonic devices FG Della Corte, S Rao IEEE Transactions on Electron Devices 60 (5), 1495 - 1505, 2013 | 56 | 2013 |
Electro-optical modulation at 1550 nm in an as-deposited hydrogenated amorphous silicon pin waveguiding device FG Della Corte, S Rao, G Coppola, C Summonte Optics express 19 (4), 2941-2951, 2011 | 49 | 2011 |
Low dark current silicon-on-insulator waveguide metal-semiconductor-metal-photodetector based on internal photoemissions at 1550 nm M Casalino, M Iodice, L Sirleto, S Rao, I Rendina, G Coppola Journal of Applied Physics 114 (15), 2013 | 39 | 2013 |
Electro-optically induced absorption in α-Si: H/α-SiCN waveguiding multistacks FGD Corte, S Rao, MA Nigro, F Suriano, C Summonte Optics Express 16 (10), 7540-7550, 2008 | 38 | 2008 |
Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes K Zeghdar, L Dehimi, F Pezzimenti, S Rao, FG Della Corte Japanese Journal of Applied Physics 58 (1), 014002, 2019 | 36 | 2019 |
Highly linear temperature sensor based on 4H-silicon carbide pin diodes S Rao, G Pangallo, FG Della Corte IEEE Electron Device Letters 36 (11), 1205-1208, 2015 | 35 | 2015 |
A 2.5 ns switching time MachZehnder modulator in as-deposited a-Si: H S Rao, G Coppola, MA Gioffrè, FG Della Corte Optics Express 20 (9), 9351-9356, 2012 | 32 | 2012 |
Analysis of different forward current–voltage behaviours of Al implanted 4H-SiC vertical p–i–n diodes ML Megherbi, F Pezzimenti, L Dehimi, S Rao, FG Della Corte Solid-State Electronics 109, 12-16, 2015 | 23 | 2015 |
Integrated amorphous silicon pin temperature sensor for CMOS photonics S Rao, G Pangallo, FG Della Corte Sensors 16 (1), 67, 2016 | 22 | 2016 |
Low-loss amorphous silicon waveguides grown by PECVD on indium tin oxide S Rao, FG Della Corte, C Summonte Journal of the European Optical Society-Rapid publications 5, 2010 | 22 | 2010 |
V2O5/4H-SiC Schottky Diode Temperature Sensor: Experiments and Model L Di Benedetto, GD Licciardo, S Rao, G Pangallo, FG Della Corte, ... IEEE Transactions on Electron Devices 65 (2), 687-694, 2018 | 20 | 2018 |
All-optical modulation in a CMOS-compatible amorphous silicon-based device S Rao, C D’Addio, FG Della Corte Journal of the European Optical Society-Rapid publications 7, 12023, 2012 | 19 | 2012 |
Electrooptical Modulating Device Based on a CMOS-Compatible ${\bm\alpha} $-Si: H/${\bm\alpha} $-SiCN Multistack Waveguide S Rao, FG Della Corte, C Summonte, F Suriano IEEE Journal of Selected Topics in Quantum Electronics 16 (1), 173-178, 2009 | 18 | 2009 |
Temperature sensing characteristics and long term stability of power LEDs used for voltage vs. Junction temperature measurements and related procedure FG Della Corte, G Pangallo, R Carotenuto, D Iero, G Marra, M Merenda, ... IEEE access 8, 43057-43066, 2020 | 17 | 2020 |
A V2O5/4H-SiC Schottky diode-based PTAT sensor operating in a wide range of bias currents S Rao, G Pangallo, L Di Benedetto, A Rubino, GD Licciardo, ... Sensors and Actuators A: Physical 269, 171-174, 2018 | 16 | 2018 |
Numerical analysis of electro-optical modulators based on the amorphous silicon technology S Rao, FG Della Corte Journal of lightwave technology 32 (13), 2399-2407, 2014 | 15 | 2014 |