| Highly enhanced ferroelectricity in HfO2-based ferroelectric thin film by light ion bombardment S Kang, WS Jang, AN Morozovska, O Kwon, Y Jin, YH Kim, H Bae, ... Science 376 (6594), 731-738, 2022 | 81 | 2022 |
| Neuromorphic active pixel image sensor array for visual memory S Hong, H Cho, BH Kang, K Park, D Akinwande, HJ Kim, S Kim ACS nano 15 (9), 15362-15370, 2021 | 63 | 2021 |
| Direct growth of orthorhombic Hf0. 5Zr0. 5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors HW Cho, P Pujar, M Choi, S Kang, S Hong, J Park, S Baek, Y Kim, J Lee, ... NPJ 2D Materials and Applications 5 (1), 1-8, 2021 | 50 | 2021 |
| Probing the efficacy of large-scale nonporous IGZO for visible-to-NIR detection capability: an approach toward high-performance image sensor circuitry A Sen, H Park, P Pujar, A Bala, H Cho, N Liu, S Gandla, S Kim ACS nano 16 (6), 9267-9277, 2022 | 22 | 2022 |
| Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma H Cho, N Lee, H Choi, H Park, C Jung, S Song, H Yuk, Y Kim, JW Kim, ... Applied Sciences 9 (17), 3531, 2019 | 21 | 2019 |
| Sub‐Thermionic Negative Capacitance Field Effect Transistors with Solution Combustion‐Derived Hf0. 5Zr0. 5O2 P Pujar, H Cho, S Gandla, M Naqi, S Hong, S Kim Advanced Functional Materials, 2103748, 2021 | 19 | 2021 |
| Remote plasma atomic layer deposition of silicon nitride with bis (dimethylaminomethyl-silyl) trimethylsilyl amine and N2 plasma for gate spacer W Jang, H Kim, Y Kweon, C Jung, H Cho, S Shin, H Kim, K Lim, H Jeon, ... Journal of Vacuum Science & Technology A 36 (3), 2018 | 14 | 2018 |
| Se-Vacancy Healing with Substitutional Oxygen in WSe2 for High-Mobility p-Type Field-Effect Transistors H Cho, M Sritharan, Y Ju, P Pujar, R Dutta, WS Jang, YM Kim, S Hong, ... ACS nano 17 (12), 11279-11289, 2023 | 12 | 2023 |
| High-performance non-volatile InGaZnO based flash memory device embedded with a monolayer Au nanoparticles M Naqi, N Kwon, SH Jung, P Pujar, HW Cho, YI Cho, HK Cho, B Lim, ... Nanomaterials 11 (5), 1101, 2021 | 12 | 2021 |
| High-intensity ultrasound-assisted low-temperature formulation of lanthanum zirconium oxide nanodispersion for thin-film transistors P Pujar, KK Madaravalli Jagadeeshkumar, M Naqi, S Gandla, HW Cho, ... ACS Applied Materials & Interfaces 12 (40), 44926-44933, 2020 | 10 | 2020 |
| Transparent and Flexible Copper Iodide Resistive Memories Processed with a Dissolution-Recrystallization Solution Technique A Bala, P Pujar, D Daw, Y Cho, M Naqi, H Cho, S Gandla, S Kim ACS Applied Electronic Materials 4 (8), 3973-3979, 2022 | 9 | 2022 |
| Flexible Platform Oriented: Unipolar‐Type Hybrid Dual‐Channel Scalable Field‐Effect Phototransistors Array Based on Tellurium Nanowires and Tellurium‐Film with Highly Linear … M Naqi, KH Choi, Y Cho, HY Rho, H Cho, P Pujar, N Liu, HS Kim, JY Choi, ... Advanced Electronic Materials 8 (7), 2101331, 2022 | 9 | 2022 |
| Evolution of high dielectric permittivity in low-temperature solution combustion-processed phase-pure high entropy oxide (CoMnNiFeCr) O for thin film transistors A Salian, P Pujar, RV Vardhan, H Cho, S Kim, S Mandal ACS Applied Electronic Materials 5 (5), 2608-2623, 2023 | 6 | 2023 |
| Phases in HfO2-Based Ferroelectric Thin Films and Their Integration in Low-Power Devices P Pujar, H Cho, S Kim ACS Applied Electronic Materials 5 (1), 11-20, 2023 | 6 | 2023 |
| Resistive Water Sensors Based on PEDOT:PSS-g-PEGME Copolymer and Laser Treatment for Water Ingress Monitoring Systems S Hong, JJ Lee, S Gandla, J Park, H Cho, S Kim ACS sensors 4 (12), 3291-3297, 2019 | 6 | 2019 |
| Ultrathin Al‐Assisted Al2O3 Passivation Layer for High‐Stability Tungsten Diselenide Transistors and Their Ambipolar Inverter H Cho, P Pujar, YI Cho, S Hong, S Kim Advanced Electronic Materials 8 (4), 2101012, 2022 | 5* | 2022 |
| Expeditiously Crystallized Pure Orthorhombic-Hf0.5Zr0.5O2 for Negative Capacitance Field Effect Transistors H Cho, P Pujar, M Choi, M Naqi, Y Cho, HY Rho, J Lee, S Kim ACS Applied Materials & Interfaces 13 (50), 60250-60260, 2021 | 4 | 2021 |
| An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors P Pujar, H Cho, YH Kim, N Zagni, J Oh, E Lee, S Gandla, P Nukala, ... ACS nano 17 (19), 19076-19086, 2023 | 3 | 2023 |
| Effect of adding an insulator between metal and semiconductor layers on contact resistance H Kim, W Jang, H Lim, Y Kweon, M Bang, S Kwon, B Kim, H Cho, H Jeon Journal of Vacuum Science & Technology B 36 (3), 2018 | 3 | 2018 |
| Direct growth of orthorhombic Hf 0.5 Zr 0.5 O 2 thin films for hysteresis-free MoS 2 negative capacitance field-effect transistors. Npj 2D Mater Appl 5: 46 HW Cho, P Pujar, M Choi | 2 | 2021 |
Pavan PujarIndian Institute of Technology (BHU) Varanasi, India在 iitbhu.ac.in 的电子邮件经过验证
