| Bonding at the Interface and the Effects of Nitrogen and Hydrogen S Wang, S Dhar, S Wang, AC Ahyi, A Franceschetti, JR Williams, ... Physical review letters 98 (2), 026101, 2007 | 230 | 2007 |
| Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes AM Armstrong, MH Crawford, A Jayawardena, A Ahyi, S Dhar Journal of Applied Physics 119 (10), 2016 | 184 | 2016 |
| Scaling between channel mobility and interface state density in SiC MOSFETs J Rozen, AC Ahyi, X Zhu, JR Williams, LC Feldman IEEE Transactions on Electron Devices 58 (11), 3808-3811, 2011 | 157 | 2011 |
| Enhanced Inversion Mobility on 4H-SiCUsing Phosphorus and Nitrogen Interface Passivation G Liu, AC Ahyi, Y Xu, T Isaacs-Smith, YK Sharma, JR Williams, ... IEEE Electron Device Letters 34 (2), 181-183, 2013 | 133 | 2013 |
| High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer YK Sharma, AC Ahyi, T Isaacs-Smith, A Modic, M Park, Y Xu, ... IEEE Electron Device Letters 34 (2), 175-177, 2013 | 97 | 2013 |
| Phosphorous passivation of the SiO2/4H–SiC interface YK Sharma, AC Ahyi, T Issacs-Smith, X Shen, ST Pantelides, X Zhu, ... Solid-State Electronics 68, 103-107, 2012 | 84 | 2012 |
| Atomic state and characterization of nitrogen at the SiC/SiO2 interface Y Xu, X Zhu, HD Lee, C Xu, SM Shubeita, AC Ahyi, Y Sharma, ... Journal of Applied Physics 115 (3), 2014 | 78 | 2014 |
| High channel mobility 4H-SiC MOSFETs by antimony counter-doping A Modic, G Liu, AC Ahyi, Y Zhou, P Xu, MC Hamilton, JR Williams, ... IEEE Electron Device Letters 35 (9), 894-896, 2014 | 72 | 2014 |
| Analysis of temperature dependent forward characteristics of Ni/β-Ga2O3 Schottky diodes A Jayawardena, AC Ahyi, S Dhar Semiconductor Science and Technology 31 (11), 115002, 2016 | 66 | 2016 |
| Proton radiation effects in 4H-SiC diodes and MOS capacitors Z Luo, T Chen, AC Ahyi, AK Sutton, BM Haugerud, JD Cressler, ... IEEE transactions on nuclear science 51 (6), 3748-3752, 2004 | 64 | 2004 |
| Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface S Dhar, SR Wang, AC Ahyi, T Isaacs-Smith, ST Pantelides, JR Williams, ... Materials science forum 527, 949-954, 2006 | 63 | 2006 |
| Experimental demonstration of the pseudo-Rayleigh wave AC Ahyi, P Pernod, O Gatti, V Latard, A Merlen, H Überall The Journal of the Acoustical Society of America 104 (5), 2727-2732, 1998 | 57 | 1998 |
| Interface trapping in (2¯ 01) β-Ga2O3 MOS capacitors with deposited dielectrics A Jayawardena, RP Ramamurthy, AC Ahyi, D Morisette, S Dhar Applied Physics Letters 112 (19), 2018 | 56 | 2018 |
| Structure and stoichiometry of (0001) 4H–SiC/oxide interface X Zhu, HD Lee, T Feng, AC Ahyi, D Mastrogiovanni, A Wan, E Garfunkel, ... Applied Physics Letters 97 (7), 2010 | 54 | 2010 |
| Evidence of negative bias temperature instability in 4H-SiC metal oxide semiconductor capacitors MJ Marinella, DK Schroder, T Isaacs-Smith, AC Ahyi, JR Williams, ... Applied physics letters 90 (25), 2007 | 54 | 2007 |
| Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors JA Taillon, J Hyuk Yang, CA Ahyi, J Rozen, JR Williams, LC Feldman, ... Journal of Applied Physics 113 (4), 2013 | 45 | 2013 |
| The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices X Zhu, AC Ahyi, M Li, Z Chen, J Rozen, LC Feldman, JR Williams Solid-state electronics 57 (1), 76-79, 2011 | 41 | 2011 |
| Flexible organic/inorganic hybrid solar cells based on conjugated polymer and ZnO nanorod array F Tong, K Kim, D Martinez, R Thapa, A Ahyi, J Williams, DJ Kim, S Lee, ... Semiconductor Science and Technology 27 (10), 105005, 2012 | 28 | 2012 |
| Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces A Modic, YK Sharma, Y Xu, G Liu, AC Ahyi, JR Williams, LC Feldman, ... Journal of electronic materials 43, 857-862, 2014 | 26 | 2014 |
| Gamma irradiation effects on 4H-SiC MOS capacitors and MOSFETs AC Ahyi, SR Wang, JR Williams Materials science forum 527, 1063-1066, 2006 | 23 | 2006 |
Sarit DharProfessor of Physics, Auburn University在 auburn.edu 的电子邮件经过验证
