The real structure of ε-Ga 2 O 3 and its relation to κ-phase I Cora, F Mezzadri, F Boschi, M Bosi, M Čaplovičová, G Calestani, ... CrystEngComm 19 (11), 1509-1516, 2017 | 306 | 2017 |
The potential of III‐V semiconductors as terrestrial photovoltaic devices M Bosi, C Pelosi Progress in Photovoltaics: Research and Applications 15 (1), 51-68, 2007 | 265 | 2007 |
Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire F Mezzadri, G Calestani, F Boschi, D Delmonte, M Bosi, R Fornari Inorganic chemistry 55 (22), 12079-12084, 2016 | 245 | 2016 |
Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD F Boschi, M Bosi, T Berzina, E Buffagni, C Ferrari, R Fornari Journal of Crystal Growth 443, 25-30, 2016 | 190 | 2016 |
Growth and synthesis of mono and few-layers transition metal dichalcogenides by vapour techniques: a review M Bosi RSC Advances 5 (92), 75500-75518, 2015 | 165 | 2015 |
Germanium: Epitaxy and its applications M Bosi, G Attolini Progress in Crystal Growth and Characterization of Materials 56 (3-4), 146-174, 2010 | 128 | 2010 |
Review on atomic layer deposition and applications of oxide thin films JS Ponraj, G Attolini, M Bosi Critical reviews in solid state and materials sciences 38 (3), 203-233, 2013 | 126 | 2013 |
Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017 | 116 | 2017 |
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ... Materials chemistry and physics 205, 502-507, 2018 | 112 | 2018 |
Ga 2 O 3 polymorphs: tailoring the epitaxial growth conditions M Bosi, P Mazzolini, L Seravalli, R Fornari Journal of Materials Chemistry C 8 (32), 10975-10992, 2020 | 111 | 2020 |
Exciton and trion in few-layer MoS2: Thickness-and temperature-dependent photoluminescence S Golovynskyi, I Irfan, M Bosi, L Seravalli, OI Datsenko, I Golovynska, B Li, ... Applied Surface Science 515, 146033, 2020 | 105 | 2020 |
A study of Indium incorporation efficiency in InGaN grown by MOVPE M Bosi, R Fornari Journal of Crystal Growth 265 (3-4), 434-439, 2004 | 80 | 2004 |
In situ TEM study of κ→ β and κ→ γ phase transformations in Ga2O3 I Cora, Z Fogarassy, R Fornari, M Bosi, A Rečnik, B Pécz Acta Materialia 183, 216-227, 2020 | 73 | 2020 |
Activation and control of visible single defects in 4H-, 6H-, and 3C-SiC by oxidation A Lohrmann, S Castelletto, JR Klein, T Ohshima, M Bosi, M Negri, ... Applied Physics Letters 108 (2), 2016 | 72 | 2016 |
The electronic structure of ε-Ga2O3 M Mulazzi, F Reichmann, A Becker, WM Klesse, P Alippi, V Fiorentini, ... APL Materials 7 (2), 2019 | 65 | 2019 |
Si and Sn doping of ε-Ga2O3 layers A Parisini, A Bosio, V Montedoro, A Gorreri, A Lamperti, M Bosi, G Garulli, ... APL Materials 7 (3), 2019 | 54 | 2019 |
Probing the nanoscale light emission properties of a CVD-grown MoS 2 monolayer by tip-enhanced photoluminescence Y Okuno, O Lancry, A Tempez, C Cairone, M Bosi, F Fabbri, M Chaigneau Nanoscale 10 (29), 14055-14059, 2018 | 50 | 2018 |
Integration of single-photon emitters into 3C-SiC microdisk resonators A Lohrmann, TJ Karle, VK Sewani, A Laucht, M Bosi, M Negri, ... ACS Photonics 4 (3), 462-468, 2017 | 49 | 2017 |
Synthesis and characterization of 3C–SiC nanowires G Attolini, F Rossi, M Bosi, BE Watts, G Salviati Journal of Non-Crystalline Solids 354 (47-51), 5227-5229, 2008 | 46 | 2008 |
Epitaxial growth of GaN/Ga2O3 and Ga2O3/GaN heterostructures for novel high electron mobility transistors S Leone, R Fornari, M Bosi, V Montedoro, L Kirste, P Doering, ... Journal of Crystal Growth 534, 125511, 2020 | 43 | 2020 |