Growth, dielectric properties, and memory device applications of ZrO2 thin films D Panda, TY Tseng Thin Solid Films 531, 1-20, 2013 | 284 | 2013 |
Status and prospects of ZnO-based resistive switching memory devices FM Simanjuntak, D Panda, KH Wei, TY Tseng Nanoscale research letters 11, 1-31, 2016 | 238 | 2016 |
One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications D Panda, TY Tseng Journal of Materials Science 48, 6849-6877, 2013 | 209 | 2013 |
A collective study on modeling and simulation of resistive random access memory D Panda, PP Sahu, TY Tseng Nanoscale research letters 13 (1), 8, 2018 | 129 | 2018 |
Perovskite Oxides as Resistive Switching Memories: A Review TYT D Panda Ferroelectrics, 2014 | 122 | 2014 |
Improving linearity by introducing Al in HfO2 as a memristor synapse device S Chandrasekaran, FM Simanjuntak, R Saminathan, D Panda, TY Tseng Nanotechnology 30 (44), 445205, 2019 | 111 | 2019 |
Forming-free bipolar resistive switching in nonstoichiometric ceria films M Ismail, CY Huang, D Panda, CJ Hung, TL Tsai, JH Jieng, CA Lin, ... Nanoscale research letters 9, 1-8, 2014 | 102 | 2014 |
Resistive switching characteristics of nickel silicide layer embedded HfO2 film D Panda, CY Huang, TY Tseng Applied Physics Letters 100 (11), 2012 | 92 | 2012 |
Improved endurance and resistive switching stability in ceria thin films due to charge transfer ability of Al dopant M Ismail, E Ahmed, AM Rana, F Hussain, I Talib, MY Nadeem, D Panda, ... ACS applied materials & interfaces 8 (9), 6127-6136, 2016 | 86 | 2016 |
Impacts of Co doping on ZnO transparent switching memory device characteristics FM Simanjuntak, OK Prasad, D Panda, CA Lin, TL Tsai, KH Wei, ... Applied Physics Letters 108 (18), 2016 | 83 | 2016 |
Single-nanoparticle catalysis at single-turnover resolution P Chen, W Xu, X Zhou, D Panda, A Kalininskiy Chemical Physics Letters 470 (4-6), 151-157, 2009 | 75 | 2009 |
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode TYT Firman Mangasa Simanjuntak, Debashis Panda, Tsung-Ling Tsai, Chun-An Lin ... Journal of Materials Science 50 (21), 6961-6969, 2015 | 74 | 2015 |
Nonvolatile Memristive Switching Characteristics of TiO $ _ {\bm 2} $ Films Embedded With Nickel Nanocrystals D Panda, A Dhar, SK Ray IEEE transactions on nanotechnology 11 (1), 51-55, 2011 | 70 | 2011 |
Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films D Panda, A Dhar, SK Ray Journal of Applied Physics 108 (10), 2010 | 66 | 2010 |
Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme S Chandrasekaran, FM Simanjuntak, D Panda, TY Tseng IEEE Transactions on Electron Devices 66 (11), 4722-4726, 2019 | 60 | 2019 |
Enhanced switching uniformity in AZO/ZnO1− x/ITO transparent resistive memory devices by bipolar double forming FM Simanjuntak, D Panda, TL Tsai, CA Lin, KH Wei, TY Tseng Applied Physics Letters 107 (3), 2015 | 59 | 2015 |
Fast, Highly Flexible, and Transparent TaOx-Based Environmentally Robust Memristors for Wearable and Aerospace Applications S Rajasekaran, FM Simanjuntak, D Panda, S Chandrasekaran, R Aluguri, ... ACS Applied Electronic Materials 2 (10), 3131-3140, 2020 | 40 | 2020 |
Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning PY Jung, D Panda, S Chandrasekaran, S Rajasekaran, TY Tseng IEEE Journal of the Electron Devices Society 8, 110-115, 2020 | 39 | 2020 |
Temperature induced complementary switching in titanium oxide resistive random access memory D Panda, FM Simanjuntak, TY Tseng AIP Advances 6 (7), 2016 | 39 | 2016 |
Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor B Pattanayak, FM Simanjuntak, D Panda, CC Yang, A Kumar, PA Le, ... Scientific reports 9 (1), 16852, 2019 | 31 | 2019 |