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nona hasani
nona hasani
Hamedan university of technology
在 aut.ac.ir 的电子邮件经过验证
标题
引用次数
引用次数
年份
Effects of spin-orbit coupling on the electronic properties of the buckled III–V monolayers
N Hasani, A Rajabi-Maram, SB Touski
Journal of Magnetism and Magnetic Materials 543, 168638, 2022
132022
Tuning electronic properties of MSb (M= C, Si, Ge and Sn) monolayers by strain engineering
A Rajabi-Maram, N Hasani, SB Touski
Physica E: Low-dimensional Systems and Nanostructures 138, 115065, 2022
122022
Strain engineering of electronic and spin properties in SnX (X= P, As, Sb, Bi) monolayers
N Hasani, A Rajabi-Maram, SB Touski
Journal of Physics and Chemistry of Solids 174, 111131, 2023
102023
Structural and electronic properties of hexagonal MXH (M= C, Si, Ge and Sn; X= N, P, As and Sb) monolayers: A first-principles prediction
A Rajabi-Maram, N Hasani, SB Touski
Physica E: Low-dimensional Systems and Nanostructures 151, 115710, 2023
62023
Electrical Properties of Double-Gate Field-Effect Transistor Based on MAN (M Ti, Zr, and Hf; A Si, Ge, and Sn) Monolayers
N Hasani, M Shalchian, A Rajabi-Maram, SB Touski
IEEE Transactions on Electron Devices, 2023
22023
Prediction of Band Inversion in Janus In2XYZ (X, Y, and Z= S, Se, Te) monolayers
A Rajabi-Maram, SB Touski, N Hasani, M Shalchian
Physical Chemistry Chemical Physics, 2024
2024
The Structural, Mechanical, Electronic, and Optical Properties of Monolayer and Bilayer Abc3 (A= Ga, in; B= Si, Ge; C= S, Se, Te)
A Rajabi-Maram, N Hasani, M Shalchian, S Babaee Touski
Mechanical, Electronic, and Optical Properties of Monolayer and Bilayer Abc3 …, 0
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