| Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008 | 777 | 2008 |
| Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 2013 | 473 | 2013 |
| Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ... IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004 | 413 | 2004 |
| GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 2021 | 340 | 2021 |
| Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006 | 225 | 2006 |
| Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008 | 162 | 2008 |
| Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells L Larcher, G Verzellesi, P Pavan, E Lusky, I Bloom, B Eitan IEEE Transactions on Electron Devices 49 (11), 1939-1946, 2002 | 148 | 2002 |
| Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors M Faqir, G Verzellesi, A Chini, F Fantini, F Danesin, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 240-247, 2008 | 136 | 2008 |
| Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays F Nava, E Vittone, P Vanni, G Verzellesi, PG Fuochi, C Lanzieri, M Glaser Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2003 | 131 | 2003 |
| Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ... physica status solidi (a) 212 (5), 947-953, 2015 | 125 | 2015 |
| Influence of buffer carbon doping on pulse and AC behavior of insulated-gate field-plated power AlGaN/GaN HEMTs G Verzellesi, L Morassi, G Meneghesso, M Meneghini, E Zanoni, ... IEEE Electron Device Letters 35 (4), 443-445, 2014 | 115 | 2014 |
| Experimental and numerical analysis of hole emission process from carbon-related traps in GaN buffer layers A Chini, G Meneghesso, M Meneghini, F Fantini, G Verzellesi, A Patti, ... IEEE Transactions on Electron Devices 63 (9), 3473-3478, 2016 | 96 | 2016 |
| Radiation-hard semiconductor detectors for SuperLHC M Bruzzi, J Adey, A Al-Ajili, P Alexandrov, G Alfieri, PP Allport, ... Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2005 | 65 | 2005 |
| A review of failure modes and mechanisms of GaN-based HEMTs E Zanoni, G Meneghesso, G Verzellesi, F Danesin, M Meneghini, ... 2007 IEEE International Electron Devices Meeting, 381-384, 2007 | 61 | 2007 |
| “Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs N Zagni, A Chini, FM Puglisi, M Meneghini, G Meneghesso, E Zanoni, ... IEEE Transactions on Electron Devices 68 (2), 697-703, 2021 | 54 | 2021 |
| Study of breakdown effects in silicon multiguard structures M Da Rold, N Bacchetta, D Bisello, A Paccagnella, GF Dalla Betta, ... Nuclear Science, IEEE Transactions on 46 (4), 1215-1223, 1999 | 52 | 1999 |
| Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes M Mandurrino, M Goano, M Vallone, F Bertazzi, G Ghione, G Verzellesi, ... Journal of Computational Electronics 14, 444-455, 2015 | 49 | 2015 |
| Investigation of efficiency-droop mechanisms in multi-quantum-well InGaN/GaN blue light-emitting diodes D Saguatti, L Bidinelli, G Verzellesi, M Meneghini, G Meneghesso, ... IEEE Transactions on Electron Devices 59 (5), 1402-1409, 2012 | 48 | 2012 |
| Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs M Faqir, G Verzellesi, F Fantini, F Danesin, F Rampazzo, G Meneghesso, ... Microelectronics reliability 47 (9-11), 1639-1642, 2007 | 44 | 2007 |
| Investigation on the charge collection properties of a 4H-SiC Schottky diode detector G Verzellesi, P Vanni, F Nava, C Canali Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2002 | 42 | 2002 |
Enrico ZanoniProfessor, Electronics, University of Padova在 dei.unipd.it 的电子邮件经过验证
