| Non-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires S Biswas, J Doherty, D Saladukha, Q Ramasse, D Majumdar, M Upmanyu, ... Nature communications 7 (1), 11405, 2016 | 135 | 2016 |
| Progress on germanium–tin nanoscale alloys J Doherty, S Biswas, E Galluccio, CA Broderick, A Garcia-Gil, R Duffy, ... Chemistry of Materials 32 (11), 4383-4408, 2020 | 51 | 2020 |
| One-Step fabrication of GeSn branched nanowires J Doherty, S Biswas, D McNulty, C Downing, S Raha, C O’Regan, ... Chemistry of Materials 31 (11), 4016-4024, 2019 | 35 | 2019 |
| Diameter-controlled germanium nanowires with lamellar twinning and polytypes S Biswas, J Doherty, D Majumdar, T Ghoshal, K Rahme, M Conroy, ... Chemistry of Materials 27 (9), 3408-3416, 2015 | 30 | 2015 |
| Influence of growth kinetics on Sn incorporation in direct band gap Ge 1− x Sn x nanowires J Doherty, S Biswas, D Saladukha, Q Ramasse, TS Bhattacharya, ... Journal of Materials Chemistry C 6 (32), 8738-8750, 2018 | 25 | 2018 |
| Germanium tin alloy nanowires as anode materials for high performance Li-ion batteries J Doherty, D McNulty, S Biswas, K Moore, M Conroy, U Bangert, ... Nanotechnology 31 (16), 165402, 2020 | 20 | 2020 |
| Field-Effect Transistor Figures of Merit for Vapor–Liquid–Solid-Grown Ge1-xSnx (x = 0.03–0.09) Nanowire Devices E Galluccio, J Doherty, S Biswas, JD Holmes, R Duffy ACS Applied Electronic Materials 2 (5), 1226-1234, 2020 | 15 | 2020 |
| Investigating the mechanical properties of GeSn nanowires J Kosmaca, R Meija, M Antsov, G Kunakova, R Sondors, I Iatsunskyi, ... Nanoscale 11 (28), 13612-13619, 2019 | 14 | 2019 |
| Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0. 92Sn0. 08 E Galluccio, N Petkov, G Mirabelli, J Doherty, SY Lin, FL Lu, CW Liu, ... Thin Solid Films 690, 137568, 2019 | 13 | 2019 |
| Stretching the Equilibrium Limit of Sn in Ge1–xSnx Nanowires: Implications for Field Effect Transistors S Biswas, J Doherty, E Galluccio, HG Manning, M Conroy, R Duffy, ... ACS Applied Nano Materials 4 (2), 1048-1056, 2021 | 4 | 2021 |
| Stabilization of Black Phosphorus by Sonication‐Assisted Simultaneous Exfoliation and Functionalization M van Druenen, T Collins, F Davitt, J Doherty, G Collins, Z Sofer, ... Chemistry–A European Journal 26 (72), 17581-17587, 2020 | 4 | 2020 |
| Optical study of strain-free GeSn nanowires D Saladukha, J Doherty, S Biswas, TJ Ochalski, JD Holmes Silicon Photonics Xii 10108, 270-275, 2017 | 4 | 2017 |
| Lattice dynamics of Ge 1− x Sn x alloy nanowires S Raha, S Biswas, J Doherty, PK Mondal, JD Holmes, A Singha Nanoscale 14 (19), 7211-7219, 2022 | | 2022 |
| Raman spectroscopy of group-IV GeSn alloys: theory and experiment DSP Tanner, S Raha, J Doherty, S Biswas, JD Holmes, EP O'Reilly, ... arXiv preprint arXiv:2112.00523, 2021 | | 2021 |
| Ni, Pt, and Ti stanogermanide formation on Ge0.92Sn0.08 E Galluccio, N Petkov, G Mirabelli, J Doherty, SV Lin, FL Lu, CW Liu, ... 2019 Joint International EUROSOI Workshop and International Conference on …, 2019 | | 2019 |
| Direct Bandgap Ge1-xSnx (x= 0.10) Nanowires in Photodetection J Doherty, M Rao, D Saladukha, H Manning, M Conroy, K Moore, ... Germanium tin nanowires: synergy at the nanoscale, 157, 2018 | | 2018 |
| Supercritical Fluid Growth of High Sn Content Ge1-xSnx (x> 0.3) Nanowires J Doherty, S Biswas, M Conroy, K Moore, U Bangert Germanium tin nanowires: synergy at the nanoscale, 246, 2018 | | 2018 |
| Germanium tin nanowires: synergy at the nanoscale J Doherty University College Cork, 2018 | | 2018 |
| This is a repository copy of Influence of growth kinetics on Sn incorporation in direct band gap Ge-xSnx nanowires ₁. J Doherty, S Biswas, D Saladukha | | |
