| Design methodology for MuGFET ESD protection devices S Thijs, D Linten, DE Trémouilles US Patent 7,923,266, 2011 | 196 | 2011 |
| Insight into boron-doped diamond Raman spectra characteristic features V Mortet, ZV Živcová, A Taylor, O Frank, P Hubík, D Trémouilles, F Jomard, ... Carbon 115, 279-284, 2017 | 113 | 2017 |
| Analysis of heavily boron-doped diamond Raman spectrum V Mortet, A Taylor, ZV Živcová, D Machon, O Frank, P Hubík, ... Diamond and Related Materials 88, 163-166, 2018 | 70 | 2018 |
| T-diodes-a novel plug-and-play wideband RF circuit ESD protection methodology D Linten, S Thijs, J Borremans, M Dehan, D Tremouilles, M Scholz, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007 | 52 | 2007 |
| Analysis and compact modeling of a vertical grounded-base npn bipolar transistor used as ESD protection in a smart power technology G Bertrand, C Delage, M Bafleur, N Nolhier, JM Dorkel, Q Nguyen, ... IEEE Journal of Solid-State Circuits 36 (9), 1373-1381, 2001 | 52 | 2001 |
| Calibrated wafer-level HBM measurements for quasi-static and transient device analysis M Scholz, S Thijs, D Linten, D Tremouilles, M Sawada, T Nakaei, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007 | 50 | 2007 |
| Size effect on properties of varistors made from zinc oxide nanoparticles through low temperature spark plasma sintering LS Macary, ML Kahn, C Estournès, P Fau, D Trémouilles, M Bafleur, ... Advanced Functional Materials 19 (11), 1775-1783, 2009 | 43* | 2009 |
| Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation F Boige, F Richardeau, D Trémouilles, S Lefebvre, G Guibaud Microelectronics Reliability 76, 500-506, 2017 | 37 | 2017 |
| Physical origin of the gate current surge during short-circuit operation of SiC MOSFET F Boige, D Trémouilles, F Richardeau IEEE Electron Device Letters 40 (5), 666-669, 2019 | 36 | 2019 |
| Understanding the optimization of sub-45nm FinFET devices for ESD applications D Tremouilles, S Thijs, C Russ, J Schneider, C Duvvury, N Collaert, ... 2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD …, 2007 | 34 | 2007 |
| Transient voltage overshoot in TLP testing—Real or artifact? D Tremouilles, S Thijs, P Roussel, MI Natarajan, V Vassilev, ... 2005 Electrical Overstress/Electrostatic Discharge Symposium, 1-9, 2005 | 34 | 2005 |
| Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation N Monnereau, F Caignet, D Tremouilles, N Nolhier, M Bafleur Microelectronics Reliability 53 (2), 221-228, 2013 | 33 | 2013 |
| Next generation bulk FinFET devices and their benefits for ESD robustness A Griffoni, S Thijs, C Russ, D Trémouilles, D Linten, M Scholz, N Collaert, ... 2009 31st EOS/ESD Symposium, 1-10, 2009 | 32 | 2009 |
| Behavioral-modeling methodology to predict Electrostatic-Discharge susceptibility failures at system level: An IBIS improvement N Monnereau, F Caignet, N Nolhier, D Trémouilles, M Bafleur 10th International Symposium on Electromagnetic Compatibility, 457-463, 2011 | 29 | 2011 |
| Investigation of modeling system ESD failure and probability using IBIS ESD models N Monnereau, F Caignet, N Nolhier, M Bafleur, D Tremouilles IEEE Transactions on Device and Materials Reliability 12 (4), 599-606, 2012 | 27 | 2012 |
| Design methodology of FinFET devices that meet IC-Level HBM ESD targets S Thijs, C Russ, D Tremouilles, A Griffoni, D Linten, M Scholz, N Collaert, ... EOS/ESD 2008-2008 30th Electrical Overstress/Electrostatic Discharge …, 2008 | 24 | 2008 |
| Electronic circuit and method of manufacturing an electronic circuit C Russ, D Trémouilles, S Thijs US Patent 7,687,859, 2010 | 23 | 2010 |
| Backside localization of current leakage faults using thermal laser stimulation R Desplats, F Beaudoin, P Perdu, P Poirier, D Trémouilles, M Bafleur, ... Microelectronics Reliability 41 (9-10), 1539-1544, 2001 | 22 | 2001 |
| A system-level electrostatic-discharge-protection modeling methodology for time-domain analysis N Monnereau, F Caignet, D Tremouilles, N Nolhier, M Bafleur IEEE transactions on electromagnetic compatibility 55 (1), 45-57, 2012 | 20 | 2012 |
| Characterization and optimization of sub-32-nm FinFET devices for ESD applications S Thijs, D Tremouilles, C Russ, A Griffoni, N Collaert, R Rooyackers, ... IEEE transactions on electron devices 55 (12), 3507-3516, 2008 | 20 | 2008 |
Steven Thijsimec在 imec.be 的电子邮件经过验证
