| Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes JP Bergman, H Lendenmann, PÅ Nilsson, U Lindefelt, P Skytt Materials Science Forum 353, 2001 | 369 | 2001 |
| Weak links and dc SQUIDS on artificial nonsymmetric grain boundaries in YBa2Cu3O7−δ ZG Ivanov, PÅ Nilsson, D Winkler, JA Alarco, T Claeson, EA Stepantsov, ... Applied physics letters 59 (23), 3030-3032, 1991 | 332 | 1991 |
| Long term operation of 4.5 kV PiN and 2.5 kV JBS diodes H Lendenmann, F Dahlquist, N Johansson, R Söderholm, PA Nilsson, ... Materials Science Forum 353, 2001 | 310 | 2001 |
| The European spallation source design R Garoby, A Vergara, H Danared, I Alonso, E Bargallo, B Cheymol, ... Physica Scripta 93 (1), 014001, 2017 | 268 | 2017 |
| Electromagnetic properties at the grain boundary interface of a YBa 2 Cu 3 O 7− δ bicrystal Josephson junction D Winkler, YM Zhang, PÅ Nilsson, EA Stepantsov, T Claeson Physical review letters 72 (8), 1260, 1994 | 156 | 1994 |
| Ultralow-power cryogenic InP HEMT with minimum noise temperature of 1 K at 6 GHz J Schleeh, G Alestig, J Halonen, A Malmros, B Nilsson, PA Nilsson, ... IEEE Electron Device Letters 33 (5), 664-666, 2012 | 132 | 2012 |
| On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs I Angelov, V Desmaris, K Dynefors, PA Nilsson, N Rorsman, H Zirath European Gallium Arsenide and Other Semiconductor Application Symposium …, 2005 | 132 | 2005 |
| Reduction of 1/f noise in high‐T dc superconducting quantum interference devices cooled in an ambient magnetic field E Dantsker, S Tanaka, PÅ Nilsson, R Kleiner, J Clarke Applied physics letters 69, 4099, 1996 | 125 | 1996 |
| Phonon black-body radiation limit for heat dissipation in electronics J Schleeh, J Mateos, I Íñiguez-de-la-Torre, N Wadefalk, PA Nilsson, ... Nature materials 14 (2), 187-192, 2015 | 98 | 2015 |
| Fabrication and characterization of field-plated buried-gate SiC MESFETs K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ... IEEE electron device letters 27 (7), 573-575, 2006 | 94 | 2006 |
| An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design M Sudow, M Fagerlind, M Thorsell, K Andersson, N Billstrom, PÅ Nilsson, ... IEEE Transactions on Microwave Theory and Techniques 56 (8), 1827-1833, 2008 | 78 | 2008 |
| High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material G Gudjonsson, HO Olafsson, F Allerstam, PA Nilsson, EO Sveinbjornsson, ... IEEE electron device letters 26 (2), 96-98, 2005 | 77 | 2005 |
| Microstructure of an artificial grain boundary weak link in an YBa2Cu3O7− σ thin film grown on a (100)(110),[001]-tilt Y-ZrO2 bicrystal JA Alarco, E Olsson, ZG Ivanov, PÅ Nilsson, D Winkler, EA Stepantsov, ... Ultramicroscopy 51 (1-4), 239-246, 1993 | 68 | 1993 |
| Cryogenic broadband ultra-low-noise MMIC LNAs for radio astronomy applications J Schleeh, N Wadefalk, PÅ Nilsson, JP Starski, J Grahn IEEE transactions on microwave theory and techniques 61 (2), 871-877, 2013 | 65 | 2013 |
| 0.3–14 and 16–28 GHz wide-bandwidth cryogenic MMIC low-noise amplifiers E Cha, N Wadefalk, PÅ Nilsson, J Schleeh, G Moschetti, A Pourkabirian, ... IEEE Transactions on Microwave Theory and Techniques 66 (11), 4860-4869, 2018 | 61 | 2018 |
| Characterization and Modeling of Cryogenic Ultralow-Noise InP HEMTs J Schleeh, H Rodilla, N Wadefalk, PÅ Nilsson, J Grahn IEEE, 2013 | 61 | 2013 |
| Method for producing a pn-junction for a semiconductor device of SiC PÅ Nilsson US Patent 6,083,814, 2000 | 57 | 2000 |
| Thermal study of the high-frequency noise in GaN HEMTs M Thorsell, K Andersson, M Fagerlind, M Sudow, PA Nilsson, N Rorsman IEEE Transactions on Microwave Theory and Techniques 57 (1), 19-26, 2008 | 55 | 2008 |
| Terahertz detection in zero-bias InAs self-switching diodes at room temperature A Westlund, P Sangaré, G Ducournau, PÅ Nilsson, C Gaquiere, ... Applied Physics Letters 103 (13), 2013 | 53 | 2013 |
| An SiC MESFET-based MMIC process M Sudow, K Andersson, N Billstrom, J Grahn, H Hjelmgren, J Nilsson, ... IEEE transactions on microwave theory and techniques 54 (12), 4072-4078, 2006 | 48 | 2006 |
Niklas RorsmanResearch Professor, Chalmers University of Technology在 chalmers.se 的电子邮件经过验证
