受强制性开放获取政策约束的文章 - Nguyen Tien Dai了解详情
可在其他位置公开访问的文章：4 篇
Colossal photosensitive boost in Schottky diode behaviour with Ce-V₂O₅ interfaced layer of MIS structure
V Balasubramani, J Chandrasekaran, TD Nguyen, S Maruthamuthu, ...
Sens. Actuator A-Phys. 315, 112333, 2020
强制性开放获取政策： Department of Science & Technology, India
Nitrogen doped 2D graphene/Zn₃V₂O₈ nanocomposite with enhanced supercapacitive features
B Suganya, S Maruthamuthu, J Chandrasekaran, B Saravanakumar, ...
Surf. Interfaces 24, 101129, 2021
强制性开放获取政策： Department of Science & Technology, India
A facile fabrication, microstructural, optical, photoluminescence and electrical properties of Ni@CeO₂ films and p-Si/n-NDC diodes for photodetection application
R Marnadu, J Chandrasekaran, TD Nguyen, JH Chang, K Mohanraj, ...
J. Inorg. Organomet. Polymer. Mater. 31 (6), 2280–2292, 2021
强制性开放获取政策： Department of Science & Technology, India
A facile sol–gel spin-coating fabrication of Ni@WO3 thin films and highly rectifying p-Si/n-Ni@WO3 heterojunction for optoelectronic applications
M Raja, J Chandrasekaran, TD Nguyen, R Marnadu, M Shkir, SK Kannan, ...
Journal of Materials Science: Materials in Electronics 32, 1582-1592, 2021
强制性开放获取政策： Department of Science & Technology, India
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