| Vertical Ferroelectric HfO2 FET based on 3-D NAND Architecture: Towards Dense Low-Power Memory K Florent, M Pesic, A Subirats, K Banerjee, S Lavizzari, A Arreghini, ... 2018 IEEE International Electron Devices Meeting (IEDM), 2.5. 1-2.5. 4, 2018 | 143 | 2018 |
| A polar corundum oxide displaying weak ferromagnetism at room temperature MR Li, U Adem, SRC McMitchell, Z Xu, CI Thomas, JE Warren, DV Giap, ... Journal of the American Chemical Society 134 (8), 3737-3747, 2012 | 88 | 2012 |
| Artificial Construction of the Layered Ruddlesden–Popper Manganite La2Sr2Mn3O10 by Reflection High Energy Electron Diffraction Monitored Pulsed Laser … RG Palgrave, P Borisov, MS Dyer, SRC McMitchell, GR Darling, ... Journal of the American Chemical Society 134 (18), 7700-7714, 2012 | 42 | 2012 |
| Impact of Charge trapping on Imprint and its Recovery in HfO2 based FeFET Y Higashi, N Ronchi, B Kaczer, K Banerjee, SRC McMitchell, ... 2019 IEEE International Electron Devices Meeting (IEDM), 15.6. 1-15.6. 4, 2019 | 38 | 2019 |
| Defect profiling in FEFET Si: HfO2 layers BJ O'sullivan, V Putcha, R Izmailov, V Afanas' ev, E Simoen, T Jung, ... Applied Physics Letters 117 (20), 2020 | 29 | 2020 |
| Investigation of imprint in FE-HfO₂ and its recovery Y Higashi, B Kaczer, AS Verhulst, BJ O’Sullivan, N Ronchi, ... IEEE Transactions on Electron Devices 67 (11), 4911-4917, 2020 | 29 | 2020 |
| Growth of M-type hexaferrite thin films with conical magnetic structure P Borisov, J Alaria, T Yang, SRC McMitchell, MJ Rosseinsky Applied Physics Letters 102 (3), 2013 | 25 | 2013 |
| New Insights into the Imprint Effect in FE-HfO2 and its Recovery Y Higashi, K Florent, A Subirats, B Kaczer, L Di Piazza, S Clima, N Ronchi, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2019 | 23 | 2019 |
| Strain and ferroelectricity in wurtzite ScxAl1− xN materials S Clima, C Pashartis, J Bizindavyi, SRC McMitchell, M Houssa, ... Applied Physics Letters 119 (17), 2021 | 20 | 2021 |
| First-Principles Perspective on Poling Mechanisms and Ferroelectric/Antiferroelectric Behavior of Hf1-xZrxO2 for FEFET Applications S Clima, SRC McMitchell, K Florent, L Nyns, M Popovici, N Ronchi, ... 2018 IEEE International Electron Devices Meeting (IEDM), 16.5. 1-16.5. 4, 2018 | 20 | 2018 |
| Ferroelectric La‐Doped ZrO2/HfxZr1−xO2 Bilayer Stacks with Enhanced Endurance M Popovici, AM Walke, K Banerjee, N Ronchi, J Meersschaut, U Celano, ... physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100033, 2021 | 19 | 2021 |
| Ferroelectricity in Si-doped hafnia: probing challenges in absence of screening charges U Celano, A Gomez, P Piedimonte, S Neumayer, L Collins, M Popovici, ... Nanomaterials 10 (8), 1576, 2020 | 19 | 2020 |
| Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET Y Higashi, N Ronchi, B Kaczer, MNK Alam, BJ O’Sullivan, K Banerjee, ... IEEE Transactions on Electron Devices 68 (9), 4391-4396, 2021 | 18 | 2021 |
| Epitaxial growth and enhanced conductivity of an IT-SOFC cathode based on a complex perovskite superstructure with six distinct cation sites R Sayers, NLO Flack, J Alaria, PA Chater, RG Palgrave, SRC McMitchell, ... Chemical Science 4 (6), 2403-2412, 2013 | 16 | 2013 |
| Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia SRC McMitchell, S Clima, N Ronchi, K Banerjee, U Celano, M Popovici, ... Applied Physics Letters 118 (9), 2021 | 15 | 2021 |
| Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor J Min, N Ronchi, SRC McMitchell, B O’Sullivan, K Banerjee, J Van Houdt, ... IEEE Electron Device Letters 42 (9), 1280-1283, 2021 | 14 | 2021 |
| Two-dimensional growth of SrTiO3 thin films on (001) MgO substrates using pulsed laser deposition and reflection high energy electron diffraction SRC McMitchell, YY Tse, H Bouyanfif, TJ Jackson, IP Jones, MJ Lancaster Applied Physics Letters 95 (17), 2009 | 14 | 2009 |
| Engineering strain and texture in ferroelectric scandium-doped aluminium nitride SRC McMitchell, AM Walke, K Banerjee, S Mertens, X Piao, M Mao, ... ACS Applied Electronic Materials 5 (2), 858-864, 2023 | 13 | 2023 |
| First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application K Banerjee, L Breuil, AP Milenin, M Pak, J Stiers, SRC McMitchell, ... 2021 IEEE International Memory Workshop (IMW), 1-4, 2021 | 13 | 2021 |
| Impact of mechanical strain on wakeup of HfO2 ferroelectric memory A Kruv, SRC McMitchell, S Clima, OO Okudur, N Ronchi, M Gonzalez, ... 2021 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2021 | 12 | 2021 |
Nicolo' RonchiR&D Engineer, imec, Belgium在 imec.be 的电子邮件经过验证
