受强制性开放获取政策约束的文章 - Lu Shunpeng了解详情
无法在其他位置公开访问的文章：2 篇
AlScN/n-GaN Ferroelectric Memristors with Controllable ON/OFF ratios and Reversible Bipolar Resistive Switching Characteristics
M Liu, S Lu, Y Jia, H Zang, K Jiang, X Sun, D Li
IEEE Electron Device Letters, 2023
强制性开放获取政策： 国家自然科学基金委员会
High-efficiency and low-loss dielectric metasurfaces on a gallium nitride platform
NK Emani, E Khaidarov, R Paniagua-Domínguez, YH Fu, V Valuckas, ...
CLEO: QELS_Fundamental Science, FTh4J. 5, 2018
强制性开放获取政策： A*Star, Singapore
可在其他位置公开访问的文章：20 篇
High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths
NK Emani, E Khaidarov, R Paniagua-Domínguez, YH Fu, V Valuckas, ...
Applied Physics Letters 111 (22), 2017
强制性开放获取政策： A*Star, Singapore
A hole accelerator for InGaN/GaN light-emitting diodes
ZH Zhang, W Liu, ST Tan, Y Ji, L Wang, B Zhu, Y Zhang, S Lu, X Zhang, ...
Applied Physics Letters 105 (15), 2014
强制性开放获取政策： A*Star, Singapore, National Research Foundation, Singapore
Advantages of the blue InGaN/GaN light-emitting diodes with an AlGaN/GaN/AlGaN quantum well structured electron blocking layer
ZG Ju, W Liu, ZH Zhang, ST Tan, Y Ji, Z Kyaw, XL Zhang, SP Lu, ...
Acs Photonics 1 (4), 377-381, 2014
强制性开放获取政策： A*Star, Singapore
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
ZH Zhang, W Liu, ST Tan, Z Ju, Y Ji, Z Kyaw, X Zhang, N Hasanov, B Zhu, ...
Optics Express 22 (103), A779-A789, 2014
强制性开放获取政策： A*Star, Singapore
On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
ZH Zhang, Y Ji, W Liu, S Tiam Tan, Z Kyaw, Z Ju, X Zhang, N Hasanov, ...
Applied Physics Letters 104 (7), 2014
强制性开放获取政策： A*Star, Singapore
Nonradiative recombination—critical in choosing quantum well number for InGaN/GaN light-emitting diodes
YP Zhang, ZH Zhang, W Liu, ST Tan, ZG Ju, XL Zhang, Y Ji, LC Wang, ...
Optics Express 23 (3), A34-A42, 2015
强制性开放获取政策： National Research Foundation, Singapore
Low thermal-mass LEDs: size effect and limits
S Lu, W Liu, ZH Zhang, ST Tan, Z Ju, Y Ji, X Zhang, Y Zhang, B Zhu, ...
Optics Express 22 (26), 32200-32207, 2014
强制性开放获取政策： A*Star, Singapore, National Research Foundation, Singapore
Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes
Y Zhang, ZH Zhang, ST Tan, PL Hernandez-Martinez, B Zhu, S Lu, ...
Applied Physics Letters 110 (3), 2017
强制性开放获取政策： 国家自然科学基金委员会, A*Star, Singapore, National Research Foundation …
Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
Z Kyaw, ZH Zhang, W Liu, S Tiam Tan, Z Gang Ju, X Liang Zhang, Y Ji, ...
Applied Physics Letters 104 (16), 2014
强制性开放获取政策： A*Star, Singapore
High-performance triangular miniaturized-LEDs for high current and power density applications
S Lu, Y Zhang, ZH Zhang, B Zhu, H Zheng, ST Tan, HV Demir
ACS Photonics 8 (8), 2304-2310, 2021
强制性开放获取政策： A*Star, Singapore, National Research Foundation, Singapore
240 nm AlGaN-based deep ultraviolet micro-LEDs: size effect versus edge effect
S Lu, J Bai, H Li, K Jiang, J Ben, S Zhang, ZH Zhang, X Sun, D Li
Journal of Semiconductors 45 (1), 012504, 2024
强制性开放获取政策： 中国科学院, 国家自然科学基金委员会
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
Z Kyaw, ZH Zhang, W Liu, ST Tan, ZG Ju, XL Zhang, Y Ji, N Hasanov, ...
Optics Express 22 (1), 809-816, 2014
强制性开放获取政策： Department of Science & Technology, India, A*Star, Singapore
Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts
N Hasanov, B Zhu, VK Sharma, S Lu, Y Zhang, W Liu, ST Tan, XW Sun, ...
Journal of Vacuum Science & Technology B 34 (1), 2016
强制性开放获取政策： A*Star, Singapore, National Research Foundation, Singapore
Decoupling contact and mirror: an effective way to improve the reflector for flip-chip InGaN/GaN-based light-emitting diodes
B Zhu, W Liu, S Lu, Y Zhang, N Hasanov, X Zhang, Y Ji, ZH Zhang, ...
Journal of Physics D: Applied Physics 49 (26), 265106, 2016
强制性开放获取政策： National Research Foundation, Singapore
Plasmonic-enhanced efficiency of AlGaN-based deep ultraviolet LED by graphene/Al nanoparticles/graphene hybrid structure
N Jiang, Y Chen, B Lv, K Jiang, S Zhang, S Lu, S Li, T Tao, X Sun, D Li
Optics Letters 48 (12), 3175-3178, 2023
强制性开放获取政策： 中国科学院, 国家自然科学基金委员会
Experimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architecture
Y Zhang, S Lu, Y Qiu, J Wu, M Zhang, D Luo
Frontiers in Chemistry 8, 630050, 2021
强制性开放获取政策： 国家自然科学基金委员会
Efficiency boosting by thermal harvesting in ingan/Gan light-emitting diodes
S Lu, Y Zhang, Y Qiu, X Liu, M Zhang, D Luo
Frontiers in Physics 9, 752476, 2021
强制性开放获取政策： 国家自然科学基金委员会
Strain-reduced micro-LEDs grown directly using partitioned growth
S Lu, Y Zhang, ZH Zhang, PC Tsai, X Zhang, ST Tan, HV Demir
Frontiers in Chemistry 9, 639023, 2021
强制性开放获取政策： A*Star, Singapore, National Research Foundation, Singapore
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