| Two-Gap State Density in : A True Bulk Property Or A Proximity Effect? F Giubileo, D Roditchev, W Sacks, R Lamy, DX Thanh, J Klein, S Miraglia, ... Physical review letters 87 (17), 177008, 2001 | 479 | 2001 |
| Hysteresis in the transfer characteristics of MoS2 transistors A Di Bartolomeo, L Genovese, F Giubileo, L Iemmo, G Luongo, T Foller, ... 2D Materials 5 (1), 015014, 2017 | 268 | 2017 |
| The role of contact resistance in graphene field-effect devices F Giubileo, A Di Bartolomeo Progress in Surface Science 92 (3), 143-175, 2017 | 260 | 2017 |
| Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors A Di Bartolomeo, L Genovese, T Foller, F Giubileo, G Luongo, L Croin, ... Nanotechnology 28 (21), 214002, 2017 | 220 | 2017 |
| Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors A Di Bartolomeo, A Grillo, F Urban, L Iemmo, F Giubileo, G Luongo, ... Advanced Functional Materials 28 (28), 1800657, 2018 | 195 | 2018 |
| Field emission from carbon nanostructures F Giubileo, A Di Bartolomeo, L Iemmo, G Luongo, F Urban Applied Sciences 8 (4), 526, 2018 | 181 | 2018 |
| Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device A Di Bartolomeo, F Giubileo, G Luongo, L Iemmo, N Martucciello, G Niu, ... 2D Materials 4 (1), 015024, 2016 | 159 | 2016 |
| Hybrid graphene/silicon Schottky photodiode with intrinsic gating effect A Di Bartolomeo, G Luongo, F Giubileo, N Funicello, G Niu, T Schroeder, ... 2D Materials 4 (2), 025075, 2017 | 141 | 2017 |
| Multiwalled carbon nanotube films as small-sized temperature sensors A Di Bartolomeo, M Sarno, F Giubileo, C Altavilla, L Iemmo, S Piano, ... Journal of Applied Physics 105 (6), 2009 | 129 | 2009 |
| Pressure‐tunable ambipolar conduction and hysteresis in thin palladium diselenide field effect transistors A Di Bartolomeo, A Pelella, X Liu, F Miao, M Passacantando, F Giubileo, ... Advanced Functional Materials 29 (29), 1902483, 2019 | 117 | 2019 |
| A WSe 2 vertical field emission transistor A Di Bartolomeo, F Urban, M Passacantando, N McEvoy, L Peters, ... Nanoscale 11 (4), 1538-1548, 2019 | 115 | 2019 |
| Field emission from single and few-layer graphene flakes S Santandrea, F Giubileo, V Grossi, S Santucci, M Passacantando, ... Applied Physics Letters 98 (16), 2011 | 114 | 2011 |
| Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics A Di Bartolomeo, F Giubileo, F Romeo, P Sabatino, G Carapella, L Iemmo, ... Nanotechnology 26 (47), 475202, 2015 | 109 | 2015 |
| A local field emission study of partially aligned carbon-nanotubes by atomic force microscope probe A Di Bartolomeo, A Scarfato, F Giubileo, F Bobba, M Biasiucci, AM Cucolo, ... Carbon 45 (15), 2957-2971, 2007 | 97 | 2007 |
| Leakage and field emission in side-gate graphene field effect transistors A Di Bartolomeo, F Giubileo, L Iemmo, F Romeo, S Russo, S Unal, ... Applied Physics Letters 109 (2), 2016 | 93 | 2016 |
| Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors A Di Bartolomeo, F Giubileo, S Santandrea, F Romeo, R Citro, ... Nanotechnology 22 (27), 275702, 2011 | 91 | 2011 |
| Gas dependent hysteresis in MoS2 field effect transistors F Urban, F Giubileo, A Grillo, L Iemmo, G Luongo, M Passacantando, ... 2D Materials 6 (4), 045049, 2019 | 86 | 2019 |
| Electrical properties and memory effects of field-effect transistors from networks of single-and double-walled carbon nanotubes A Di Bartolomeo, M Rinzan, AK Boyd, Y Yang, L Guadagno, F Giubileo, ... Nanotechnology 21 (11), 115204, 2010 | 84 | 2010 |
| Transport and Field Emission Properties of MoS2 Bilayers F Urban, M Passacantando, F Giubileo, L Iemmo, A Di Bartolomeo Nanomaterials 8 (3), 151, 2018 | 82 | 2018 |
| Field emission from a selected multiwall carbon nanotube M Passacantando, F Bussolotti, S Santucci, A Di Bartolomeo, F Giubileo, ... Nanotechnology 19 (39), 395701, 2008 | 79 | 2008 |
Antonio Di BartolomeoUniversità di Salerno, Italy在 unisa.it 的电子邮件经过验证
