关注
Alquier Daniel
Alquier Daniel
在 univ-tours.fr 的电子邮件经过验证
标题
引用次数
引用次数
年份
Organic/inorganic hybrid stretchable piezoelectric nanogenerators for self‐powered wearable electronics
AS Dahiya, F Morini, S Boubenia, K Nadaud, D Alquier, G Poulin‐Vittrant
Advanced Materials Technologies 3 (2), 1700249, 2018
1232018
Evidence of electrical activity of extended defects in 3C–SiC grown on Si
X Song, JF Michaud, F Cayrel, M Zielinski, M Portail, T Chassagne, ...
Applied Physics Letters 96 (14), 2010
752010
A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations
S Boubenia, AS Dahiya, G Poulin-Vittrant, F Morini, K Nadaud, D Alquier
Scientific reports 7 (1), 15187, 2017
742017
Transient enhanced diffusion in preamorphized silicon: the role of the surface
NEB Cowern, D Alquier, M Omri, A Claverie, A Nejim
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999
741999
Transient enhanced diffusion of boron in presence of end-of-range defects
C Bonafos, M Omri, B De Mauduit, G BenAssayag, A Claverie, D Alquier, ...
Journal of applied physics 82 (6), 2855-2861, 1997
741997
Fabrication of ZnO nanowire based piezoelectric generators and related structures
C Opoku, AS Dahiya, C Oshman, F Cayrel, G Poulin-Vittrant, D Alquier, ...
Physics Procedia 70, 858-862, 2015
642015
The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
C Bonafos, A Claverie, D Alquier, C Bergaud, A Martinez, L Laanab, ...
Applied physics letters 71 (3), 365-367, 1997
451997
Single-crystalline ZnO sheet source-gated transistors
AS Dahiya, C Opoku, RA Sporea, B Sarvankumar, G Poulin-Vittrant, ...
Scientific Reports 6 (1), 19232, 2016
402016
Fabrication of field-effect transistors and functional nanogenerators using hydrothermally grown ZnO nanowires
C Opoku, AS Dahiya, F Cayrel, G Poulin-Vittrant, D Alquier, N Camara
RSC advances 5 (86), 69925-69931, 2015
392015
Elastic energy of strained islands: Contribution of the substrate as a function of the island aspect ratio and inter-island distance
A Ponchet, D Lacombe, L Durand, D Alquier, JM Cardonna
Applied physics letters 72 (23), 2984-2986, 1998
391998
Fabrication and characterization of ZnO nanowire-based piezoelectric nanogenerators for low frequency mechanical energy harvesting
G Poulin-Vittrant, C Oshman, C Opoku, AS Dahiya, N Camara, D Alquier, ...
Physics Procedia 70, 909-913, 2015
362015
Deposition time and annealing effects of ZnO seed layer on enhancing vertical alignment of piezoelectric ZnO nanowires
T Slimani Tlemcani, C Justeau, K Nadaud, G Poulin-Vittrant, D Alquier
Chemosensors 7 (1), 7, 2019
332019
Interactions between Dopants and End-of-Range Defects in Silicon
A Claverie, C Bonafos, A Martinez, D Alquier
Solid State Phenomena 47, 195-204, 1995
331995
Optimization of the fabrication of sealed capacitive transducers using surface micromachining
B Belgacem, D Alquier, P Muralt, J Baborowski, S Lucas, R Jerisian
Journal of Micromechanics and Microengineering 14 (2), 299, 2003
322003
Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects?
M Omri, C Bonafos, A Claverie, A Nejim, F Cristiano, D Alquier, A Martinez, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
321996
Stability evaluation of ZnO nanosheet based source-gated transistors
AS Dahiya, RA Sporea, G Poulin-Vittrant, D Alquier
Scientific Reports 9 (1), 2979, 2019
292019
Flexible organic/inorganic hybrid field-effect transistors with high performance and operational stability
AS Dahiya, C Opoku, G Poulin-Vittrant, N Camara, C Daumont, ...
ACS Applied Materials & Interfaces 9 (1), 573-584, 2017
292017
Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers
D Alquier, C Bongiorno, F Roccaforte, V Raineri
Applied Physics Letters 86 (21), 2005
282005
Recent progresses in GaN power rectifier
D Alquier, F Cayrel, O Menard, AE Bazin, A Yvon, E Collard
Japanese Journal of Applied Physics 51 (1S), 01AG08, 2012
272012
Porosity and thickness characterization of porous Si and oxidized porous Si layers–An ultraviolet–visible–mid infrared ellipsometry study
B Fodor, E Agocs, B Bardet, T Defforge, F Cayrel, D Alquier, M Fried, ...
microporous and mesoporous materials 227, 112-120, 2016
262016
系统目前无法执行此操作,请稍后再试。
文章 1–20