| Phase-Change Memory—Towards a Storage-Class Memory SW Fong, CM Neumann, HSP Wong IEEE Transactions on Electron Devices 64 (11), 4374-4385, 2017 | 405 | 2017 |
| Energy Dissipation in Monolayer MoS2 Electronics E Yalon, CJ McClellan, KKH Smithe, M Muñoz Rojo, RL Xu, ... Nano Letters 17 (6), 3429–3433, 2017 | 229 | 2017 |
| Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS2 by Raman Thermometry E Yalon, B Aslan, KKH Smithe, CJ McClellan, SV Suryavanshi, F Xiong, ... ACS applied materials & interfaces 9 (49), 43013-43020, 2017 | 176 | 2017 |
| Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier C Ahn, SW Fong, Y Kim, S Lee, A Sood, CM Neumann, M Asheghi, ... Nano letters 15 (10), 6809-6814, 2015 | 160 | 2015 |
| Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition A Behnam, AS Lyons, MH Bae, EK Chow, S Islam, CM Neumann, E Pop Nano letters 12 (9), 4424-4430, 2012 | 148 | 2012 |
| Spatially resolved thermometry of resistive memory devices E Yalon, S Deshmukh, MM Rojo, F Lian, CM Neumann, F Xiong, E Pop Scientific Reports 7 (1), 15360, 2017 | 67 | 2017 |
| Stanford memory trends HSP Wong, C Ahn, J Cao, HY Chen, SW Fong, Z Jiang, C Neumann, ... tech. report, 2016 | 58 | 2016 |
| Engineering thermal and electrical interface properties of phase change memory with monolayer MoS2 CM Neumann, KL Okabe, E Yalon, RW Grady, HSP Wong, E Pop Applied Physics Letters 114 (8), 2019 | 47 | 2019 |
| Understanding the switching mechanism of interfacial phase change memory KL Okabe, A Sood, E Yalon, CM Neumann, M Asheghi, E Pop, ... Journal of Applied Physics 125 (18), 2019 | 44 | 2019 |
| Towards ultimate scaling limits of phase-change memory F Xiong, E Yalon, A Behnam, CM Neumann, KL Grosse, S Deshmukh, ... 2016 IEEE International Electron Devices Meeting (IEDM), 4.1. 1-4.1. 4, 2016 | 43 | 2016 |
| Dual-Layer Dielectric Stack for Thermally Isolated Low-Energy Phase-Change Memory SW Fong, CM Neumann, E Yalon, MM Rojo, E Pop, HSP Wong IEEE Transactions on Electron Devices 64 (11), 4496-4502, 2017 | 38 | 2017 |
| FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory SC Chang, N Haratipour, S Shivaraman, C Neumann, S Atanasov, J Peck, ... 2021 IEEE International Electron Devices Meeting (IEDM), 33.2. 1-33.2. 4, 2021 | 25 | 2021 |
| Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates CJ Brennan, CM Neumann, SA Vitale Journal of Applied Physics 118 (4), 2015 | 22 | 2015 |
| Uncovering Phase Change Memory Energy Limits by Sub‐Nanosecond Probing of Power Dissipation Dynamics K Stern, N Wainstein, Y Keller, CM Neumann, E Pop, S Kvatinsky, E Yalon Advanced Electronic Materials 7 (8), 2100217, 2021 | 13 | 2021 |
| Hafnia-Based FeRAM: A Path Toward Ultra-High Density for Next-Generation High-Speed Embedded Memory N Haratipour, SC Chang, S Shivaraman, C Neumann, YC Liao, ... 2022 International Electron Devices Meeting (IEDM), 6.7. 1-6.7. 4, 2022 | 12 | 2022 |
| Sub-Nanosecond Pulses Enable Partial Reset for Analog Phase Change Memory K Stern, N Wainstein, Y Keller, CM Neumann, E Pop, S Kvatinsky, E Yalon IEEE Electron Device Letters 42 (9), 1291-1294, 2021 | 11 | 2021 |
| Graphene-based electromechanical thermal switches ME Chen, MM Rojo, F Lian, J Koeln, A Sood, SM Bohaichuk, ... 2D Materials 8 (3), 035055, 2021 | 8 | 2021 |
| Molybdenum oxide on carbon nanotube: Doping stability and correlation with work function RS Park, HJK Kim, G Pitner, C Neumann, S Mitra, HSP Wong Journal of Applied Physics 128 (4), 2020 | 7 | 2020 |
| Stateful Logic Using Phase Change Memory B Hoffer, N Wainstein, CM Neumann, E Pop, E Yalon, S Kvatinsky IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022 | 6 | 2022 |
| The Effect of Interfaces on Phase Change Memory Switching CM Neumann Stanford University, 2019 | 4 | 2019 |
Eric PopPease-Ye Professor of Electrical Eng., Materials Sci., App. Phys., Stanford & SLAC在 stanford.edu 的电子邮件经过验证
