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Sharadindu Gopal Kirtania
Sharadindu Gopal Kirtania
在 gatech.edu 的电子邮件经过验证
标题
引用次数
引用次数
年份
Flexible antennas: A review
SG Kirtania, AW Elger, MR Hasan, A Wisniewska, K Sekhar, T Karacolak, ...
Micromachines 11 (9), 847, 2020
1952020
Logic compatible high-performance ferroelectric transistor memory
S Dutta, H Ye, AA Khandker, SG Kirtania, A Khanna, K Ni, S Datta
IEEE Electron Device Letters 43 (3), 382-385, 2022
542022
CPW-fed flexible ultra-wideband antenna for IoT applications
SG Kirtania, BA Younes, AR Hossain, T Karacolak, PK Sekhar
Micromachines 12 (4), 453, 2021
522021
High electron mobility transistors: performance analysis, research trend and applications
MNA Aadit, SG Kirtania, F Afrin, MK Alam, QDM Khosru
Different Types of Field-Effect Transistors-Theory and Applications, 45-64, 2017
412017
Inkjet printing on a new flexible ceramic substrate for Internet of Things (IoT) applications
SG Kirtania, MA Riheen, SU Kim, K Sekhar, A Wisniewska, PK Sekhar
Micromachines 11 (9), 841, 2020
352020
BEOL-compatible superlattice FEFET analog synapse with improved linearity and symmetry of weight update
KA Aabrar, SG Kirtania, FX Liang, J Gomez, M San Jose, Y Luo, H Ye, ...
IEEE Transactions on Electron Devices 69 (4), 2094-2100, 2022
332022
BEOL compatible superlattice FerroFET-based high precision analog weight cell with superior linearity and symmetry
KA Aabrar, J Gomez, SG Kirtania, M San Jose, Y Luo, PG Ravikumar, ...
2021 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2021
282021
A thousand state superlattice (SL) FEFET analog weight cell
KA Aabrar, SG Kirtania, A Lu, A Khanna, W Chakraborty, M San Jose, ...
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022
72022
3D simulation of impact ionization induced kink effect in AlGaN/GaN HEMTs: A novel split channel design with asymmetric double gate for kink suppression
SG Kirtania, MNA Aadit, MK Alam
2017 3rd International Conference on Electrical Information and …, 2017
62017
Theoretical and Empirical Insight into Dopant, Mobility and Defect States in W Doped Amorphous In2 O3 for High-Performance Enhancement Mode BEOL …
Y Hu, H Ye, KA Aabrar, SG Kirtania, W Chakraborty, S Datta, K Cho
2022 International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2022
52022
Pitch and formant estimation of bangla speech signal using autocorrelation, cepstrum and LPC algorithm
MNA Aadit, SG Kirtania, MT Mahin
2016 19th International Conference on Computer and Information Technology …, 2016
52016
Dependence of threshold voltage on doped layer thickness in AlGaN/GaN HEMT: An improved split donor E-mode design
MNA Aadit, SG Kirtania, MK Alam
2016 5th International Conference on Informatics, Electronics and Vision …, 2016
42016
Study and suppression of ambipolar effect in multilayer phosphorene tunnel field effect transistors using double gate structure
MNA Aadit, SN Juthi, SG Kirtania
2017 3rd International Conference on Electrical Information and …, 2017
32017
Suppression of white and colored noise in Bangla speech using Kalman filter
MNA Aadit, SG Kirtania, MT Mahin
2016 3rd International Conference on Electrical Engineering and Information …, 2016
32016
BEOL compatible oxide power transistors for on-chip voltage conversion in heterogenous 3D (H3D) integrated circuits
S Deng, J Kwak, J Lee, KA Aabrar, TH Kim, G Choe, SG Kirtania, C Zhang, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
22023
Total ionizing dose effect in tri-gate silicon ferroelectric transistor memory
KA Aabrar, J Read, SG Kirtania, S Stepanoff, DE Wolfe, S Yu, S Datta
2022 International Electron Devices Meeting (IEDM), 32.7. 1-32.7. 4, 2022
22022
Estimation of polarization charge in nitride based MODFETs using differential threshold voltage technique
MNA Aadit, SG Kirtania, MK Alam
2016 3rd International Conference on Electrical Engineering and Information …, 2016
22016
Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In2O3 Dual-Gate Transistor
KA Aabrar, SG Kirtania, S Deng, G Choe, A Khan, S Yu, S Datta
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
12023
Cold-FeFET as Embedded Non-Volatile Memory with Unlimited Cycling Endurance
SG Kirtania, KA Aabrar, AI Khan, S Yu, S Datta
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023
12023
Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors
O Phadke, KA Aabrar, Y Luo, SG Kirtania, AI Khan, S Datta, S Yu
2023 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2023
12023
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