| N-doping of graphene through electrothermal reactions with ammonia X Wang, X Li, L Zhang, Y Yoon, PK Weber, H Wang, J Guo, H Dai science 324 (5928), 768-771, 2009 | 2411 | 2009 |
| How Good Can Monolayer MoS2 Transistors Be? Y Yoon, K Ganapathi, S Salahuddin Nano letters 11 (9), 3768-3773, 2011 | 1802 | 2011 |
| Performance comparison of graphene nanoribbon FETs with Schottky contacts and doped reservoirs Y Yoon, G Fiori, S Hong, G Iannaccone, J Guo IEEE Transactions on electron devices 55 (9), 2314-2323, 2008 | 208 | 2008 |
| Effect of edge roughness in graphene nanoribbon transistors Y Yoon, J Guo Applied Physics Letters 91 (7), 2007 | 208 | 2007 |
| Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study Y Ouyang, Y Yoon, J Guo IEEE Transactions on Electron Devices 54 (9), 2223-2231, 2007 | 193 | 2007 |
| Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors Y Ouyang, Y Yoon, JK Fodor, J Guo Applied Physics Letters 89 (20), 2006 | 178 | 2006 |
| Carbon‐nanotube‐enabled vertical field effect and light‐emitting transistors B Liu, MA McCarthy, Y Yoon, DY Kim, Z Wu, F So, PH Holloway, ... Advanced Materials 20 (19), 3605-3609, 2008 | 175 | 2008 |
| Highly Crystalline CVD-grown Multilayer MoSe2 Thin Film Transistor for Fast Photodetector C Jung, SM Kim, H Moon, G Han, J Kwon, YK Hong, I Omkaram, Y Yoon, ... Scientific reports 5 (1), 15313, 2015 | 159 | 2015 |
| Gate electrostatics and quantum capacitance of graphene nanoribbons J Guo, Y Yoon, Y Ouyang Nano Letters 7 (7), 1935-1940, 2007 | 128 | 2007 |
| A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films J Baek, D Yin, N Liu, I Omkaram, C Jung, H Im, S Hong, SM Kim, YK Hong, ... Nano Research 10, 1861-1871, 2017 | 127 | 2017 |
| Giant photoamplification in indirect-bandgap multilayer MoS2 phototransistors with local bottom-gate structures. J Kwon, YK Hong, G Han, I Omkaram, W Choi, S Kim, Y Yoon Advanced Materials (Deerfield Beach, Fla.) 27 (13), 2224-2230, 2015 | 127 | 2015 |
| Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance K Ganapathi, Y Yoon, S Salahuddin Applied Physics Letters 97 (3), 2010 | 104 | 2010 |
| Label-Free and Recalibrated Multilayer MoS2 Biosensor for Point-of-Care Diagnostics H Park, G Han, SW Lee, H Lee, SH Jeong, M Naqi, AA AlMutairi, YJ Kim, ... ACS applied materials & interfaces 9 (50), 43490-43497, 2017 | 79 | 2017 |
| Metal-semiconductor junction of graphene nanoribbons S Hong, Y Yoon, J Guo Applied Physics Letters 92 (8), 2008 | 74 | 2008 |
| Graphene nanoribbon FETs: Technology exploration for performance and reliability MR Choudhury, Y Yoon, J Guo, K Mohanram IEEE transactions on nanotechnology 10 (4), 727-736, 2010 | 72 | 2010 |
| Interstitial Mo‐Assisted Photovoltaic Effect in Multilayer MoSe2 Phototransistors S Kim, J Maassen, J Lee, SM Kim, G Han, J Kwon, S Hong, J Park, N Liu, ... Advanced Materials 30 (12), 1705542, 2018 | 65 | 2018 |
| Analysis of strain effects in ballistic carbon nanotube FETs Y Yoon, J Guo IEEE Transactions on Electron Devices 54 (6), 1280-1287, 2007 | 57 | 2007 |
| PtSe2 Field-Effect Transistors: New Opportunities for Electronic Devices AA AlMutairi, D Yin, Y Yoon IEEE Electron Device Letters 39 (1), 151-154, 2017 | 52 | 2017 |
| Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green’s function method with real space approach Y Yoon, DE Nikonov, S Salahuddin Applied Physics Letters 98 (20), 2011 | 51 | 2011 |
| Current-voltage model for negative capacitance field-effect transistors H Lee, Y Yoon, C Shin IEEE Electron Device Letters 38 (5), 669-672, 2017 | 50 | 2017 |
