| Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories LM Procel, L Trojman, J Moreno, F Crupi, V Maccaronio, R Degraeve, ... Journal of Applied Physics 114 (7), 2013 | 68 | 2013 |
| Origins and implications of increased channel hot carrier variability in nFinFETs B Kaczer, J Franco, M Cho, T Grasser, PJ Roussel, S Tyaginov, M Bina, ... 2015 IEEE International Reliability Physics Symposium, 3B. 5.1-3B. 5.6, 2015 | 40 | 2015 |
| Structural properties of PbTiO3 and PbZrxTi1−xO3: A quantum‐chemical study A Stashans, C Zambrano, A Sanchez, LM Procel International journal of quantum chemistry 87 (3), 145-151, 2002 | 31 | 2002 |
| Defect-centric distribution of channel hot carrier degradation in nano-MOSFETs LM Procel, F Crupi, J Franco, L Trojman, B Kaczer IEEE Electron Device Letters 35 (12), 1167-1169, 2014 | 26 | 2014 |
| Reconfigurable CMOS/STT-MTJ non-volatile circuit for logic-in-memory applications E Garzón, B Zambrano, T Moposita, R Taco, LM Prócel, L Trojman 2020 IEEE 11th Latin American Symposium on Circuits & Systems (LASCAS), 1-4, 2020 | 19 | 2020 |
| DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory V Maccaronio, F Crupi, LM Procel, L Goux, E Simoen, L Trojman, ... Microelectronic engineering 107, 1-5, 2013 | 17 | 2013 |
| Hydrogen impurity in SrTiO3: structure, electronic properties and migration L Villamagua, R Barreto, LM Prócel, A Stashans Physica Scripta 75 (3), 374, 2007 | 15 | 2007 |
| XNOR-bitcount operation exploiting computing-in-memory with STT-MRAMs A Musello, E Garzón, M Lanuzza, LM Prócel, R Taco IEEE Transactions on Circuits and Systems II: Express Briefs 70 (3), 1259-1263, 2023 | 13 | 2023 |
| A DFT Study of the Components of a Hf/HfO2/TiN three-layer stack JF Fraga, LM Prócel, L Trojman, FJ Torres Avances 5 (2), A1-A7, 2013 | 11 | 2013 |
| Mott–Wannier excitons in the tetragonal BaTiO3 lattice LM Prócel, F Tipán, A Stashans International journal of quantum chemistry 91 (4), 586-590, 2003 | 11 | 2003 |
| Structural and electronic properties of PbZrxTi1‐xO3 (x = 0.5, 0.375): A quantum chemical study C Zambrano, A Sanchez, LM Procel, A Stashans International journal of quantum chemistry 95 (1), 37-43, 2003 | 10 | 2003 |
| A Defect-Centric perspective on channel hot carrier variability in nMOSFETs LM Procel, F Crupi, J Franco, L Trojman, B Kaczer, N Wils, H Tuinhout Microelectronic Engineering 147, 72-74, 2015 | 9 | 2015 |
| New insight for next generation SRAM: tunnel FET versus FinFET for different topologies A Arevalo, R Liautard, D Romero, L Trojman, LM Procel Proceedings of the 32nd Symposium on Integrated Circuits and Systems Design, 1-6, 2019 | 8 | 2019 |
| Implementation and optimization of the algorithm of automatic color enhancement in digital images JS Romero, LM Procel, L Trojman, D Verdier 2017 IEEE International Autumn Meeting on Power, Electronics and Computing …, 2017 | 8 | 2017 |
| Structural and electronic properties of PZT A Sanchez, C Zambrano, LM Procel, A Stashans Advanced Organic and Inorganic Optical Materials 5122, 310-316, 2003 | 8 | 2003 |
| Energy efficient self-adaptive Dual Mode Logic address decoder K Vicuña, C Mosquera, A Musello, S Benedictis, M Rendón, E Garzón, ... Electronics 10 (9), 1052, 2021 | 7 | 2021 |
| TFET and FinFET hybrid technologies for SRAM cell: performance improvement over a large VDD-range R Liautard, L Trojman, A Arevalo, LM Procel 2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), 1-5, 2019 | 6 | 2019 |
| Performance benchmarking of TFET and FinFET digital circuits from a synthesis-based perspective M Rendón, C Cao, K Landázuri, E Garzón, LM Prócel, R Taco Electronics 11 (4), 632, 2022 | 5 | 2022 |
| Power and area reduction of MD5 based on cryptoprocessor using novel approach of internal counters on the finite state machine JJ Jiménez, L Trojman, LM Procel 2019 IEEE Fourth Ecuador Technical Chapters Meeting (ETCM), 1-4, 2019 | 5 | 2019 |
| A defect-centric analysis of the temperature dependence of the channel hot carrier degradation in nMOSFETs LM Procel, F Crupi, L Trojman, J Franco, B Kaczer IEEE Transactions on Device and Materials Reliability 16 (1), 98-100, 2015 | 5 | 2015 |
Lionel TrojmanInstitut Supérieur d'Electronique de Paris - Isep在 isep.fr 的电子邮件经过验证
