| Bi2Te3 photoconductive detectors on Si J Liu, Y Li, Y Song, Y Ma, Q Chen, Z Zhu, P Lu, S Wang Applied Physics Letters 110 (14), 2017 | 53 | 2017 |
| Ferroelectric enhanced performance of a GeSn/Ge dual-nanowire photodetector Y Yang, X Wang, C Wang, Y Song, M Zhang, Z Xue, S Wang, Z Zhu, G Liu, ... Nano letters 20 (5), 3872-3879, 2020 | 40 | 2020 |
| Structural properties of GeSn thin films grown by molecular beam epitaxy ZP Zhang, YX Song, ZYS Zhu, Y Han, QM Chen, YY Li, LY Zhang, ... AIP Advances 7 (4), 2017 | 20 | 2017 |
| Tuning of source material for InAs/InGaAsSb/GaSb application-specific vertical nanowire tunnel FETs A Krishnaraja, J Svensson, E Memisevic, Z Zhu, AR Persson, E Lind, ... ACS Applied Electronic Materials 2 (9), 2882-2887, 2020 | 18 | 2020 |
| Compressively-strained GaSb nanowires with core-shell heterostructures Z Zhu, J Svensson, AR Persson, R Wallenberg, AV Gromov, ... Nano Research 13, 2517-2524, 2020 | 16 | 2020 |
| Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy ZP Zhang, YX Song, YY Li, XY Wu, ZYS Zhu, Y Han, LY Zhang, H Huang, ... AIP Advances 7 (10), 2017 | 16 | 2017 |
| Analysis of Raman scattering from inclined GeSn/Ge dual-nanowire heterostructure on Ge (1 1 1) substrate D Han, H Ye, Y Song, Z Zhu, Y Yang, Z Yu, Y Liu, S Wang, Z Di Applied Surface Science 463, 581-586, 2019 | 14 | 2019 |
| Improved electrostatics through digital etch schemes in vertical GaSb nanowire p-MOSFETs on Si Z Zhu, A Jonsson, YP Liu, J Svensson, R Timm, LE Wernersson ACS Applied Electronic Materials 4 (1), 531-538, 2022 | 12 | 2022 |
| Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy Z Zhu, Y Song, Z Zhang, H Sun, Y Han, Y Li, L Zhang, Z Xue, Z Di, ... Journal of Applied Physics 122 (9), 2017 | 12* | 2017 |
| Integration of Ferroelectric HfxZr1-xO2 on Vertical III-V Nanowire Gate-All-Around FETs on Silicon AEO Persson, Z Zhu, R Athle, LE Wernersson IEEE Electron Device Letters 43 (6), 854-857, 2022 | 10 | 2022 |
| Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction D Dzhigaev, J Svensson, A Krishnaraja, Z Zhu, Z Ren, Y Liu, S Kalbfleisch, ... Nanoscale 12 (27), 14487-14493, 2020 | 10 | 2020 |
| Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor Z Zhu, AEO Persson, LE Wernersson Nature Communications 14 (1), 2530, 2023 | 9 | 2023 |
| Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy ZP Zhang, YX Song, QM Chen, XY Wu, ZYS Zhu, LY Zhang, YY Li, ... Journal of Physics D: Applied Physics 50 (46), 465301, 2017 | 9 | 2017 |
| High Current Density Vertical Nanowire TFETs with I 60> 1μA/μm G Rangasamy, Z Zhu, LE Wernersson IEEE Access 11, 95692-95696, 2023 | 7 | 2023 |
| Sensing single domains and individual defects in scaled ferroelectrics Z Zhu, AEO Persson, LE Wernersson Science Advances 9 (5), eade7098, 2023 | 7 | 2023 |
| Performance enhancement of GaSb vertical nanowire p-type MOSFETs on Si by rapid thermal annealing Z Zhu, J Svensson, A Jönsson, LE Wernersson Nanotechnology 33 (7), 075202, 2021 | 7 | 2021 |
| Abnormal strain in suspended GeSn microstructures Y Han, Y Song, X Chen, Z Zhang, J Liu, Y Li, Z Zhu, H Huang, J Shao, ... Materials Research Express 5 (3), 035901, 2018 | 6 | 2018 |
| A comparative study of selective dry and wet etching of germanium–tin (Ge1− xSnx) on germanium Y Han, Y Li, Y Song, C Chi, Z Zhang, J Liu, Z Zhu, S Wang Semiconductor Science and Technology 33 (8), 085011, 2018 | 5 | 2018 |
| InPBi quantum dots for super-luminescence diodes L Zhang, Y Song, Q Chen, Z Zhu, S Wang Nanomaterials 8 (9), 705, 2018 | 4 | 2018 |
| GeSn/Ge dual-nanowire heterostructure Z Zhu, Y Song, Y Han, Y Li, Z Zhang, L Zhang, S Wang 2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), 71-72, 2017 | 4 | 2017 |
Yuxin SongSenior Detector Scientist, Redlen Technology在 redlen.com 的电子邮件经过验证
