| Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer A Rabehi, B Nail, H Helal, A Douara, A Ziane, M Amrani, B Akkal, ... Superlattices and Microstructures 146, 106665, 2020 | 36 | 2020 |
| Optimization of two‐dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors A Douara, B Djellouli, H Abid, A Rabehi, A Ziane, M Mostefaoui, ... International Journal of Numerical Modelling: Electronic Networks, Devices …, 2019 | 9 | 2019 |
| IV Characteristics Model For AlGaN/GaN HEMTs Using Tcad-Silvaco A Douara, B Djellouli, A Rabehi, A Ziane, N Belkadi Journal of New Technology and Materials 4 (2), 16-24, 2014 | 7 | 2014 |
| Design and Implementation of a Medical TeleMonitoring System based on IoT M Hamdani, M Youcefi, A Rabehi, B Nail, A Douara Engineering, Technology & Applied Science Research 12 (4), 8949-8953, 2022 | 6 | 2022 |
| Optimal estimation of Schottky diode parameters using advanced swarm intelligence algorithms A Rabehi, B Nail, H Helal, A Douara, A Ziane, M Amrani, B Akkal, ... Semiconductors 54, 1398-1405, 2020 | 6 | 2020 |
| 2-D optimisation current–voltage characteristics in AlGaN/GaN HEMTs with influence of passivation layer A Douara, A Rabehi, B Djellouli, A Ziane, H Abid International Journal of Ambient Energy 42 (12), 1363-1366, 2021 | 3 | 2021 |
| Frequency dependent capacitance and conductance–voltage characteristics of nitride GaAs Schottky diode A Ziane, M Amrani, A Rabehi, A Douara, M Mostefaoui, A Necaibia, ... Semiconductors 55, 51-55, 2021 | 3 | 2021 |
| Improved electrical characteristics of AlxGa1− xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters A Douara, A Rabehi, O Baitiche, M Handami Revista Mexicana de Física 69 (4 Jul-Aug), 041001 1–6-041001 1–6, 2023 | 2 | 2023 |
| Impact of AlN interlayer on the electronic and IV characteristics of In0. 17Al0. 83N/GaN HEMTs devices A Douara, A Rabehi, O Baitiche Revista Mexicana de Física 69 (3 May-Jun), 031602 1–6-031602 1–6, 2023 | 2 | 2023 |
| Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode A Rabehi, B Akkal, M Amrani, S Tizi, Z Benamara, H Helal, A Douara, ... Semiconductors 55 (4), 446-454, 2021 | 2 | 2021 |
| Capacitance Models of AlGaN/GaN High Electron Mobility Transistors A Douara, N Kermas, B Djellouli International Journal of Nuclear and Quantum Engineering 10 (3), 420-423, 2016 | 2 | 2016 |
| Effect of Geometrical and Physical parameters of AlGaN/GaN HEMT on the electrical characteristics with AlN spacer layer A Douara, A Rabehi, M Hamdani International Journal of Advanced Studies in Computers, Science and …, 2022 | 1 | 2022 |
| Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function R Abdelaziz, R Abdelhalim, D Abdelmalek, H Hicham, B Oussama, ... Sumy State University, 2022 | 1 | 2022 |
| Fabrication and characteristics of Hg/n-bulk GaN schottky diode B Nabil, R Abdelaziz, Z Ouennoughi, A Douara Leonardo Journal of Sciences 26, 113-123, 2015 | 1 | 2015 |
| IV Characteristics model for AlGaN A Douara, B Djellouli, A Rabehi, A Ziane, N Belkadic GaN HEMTs using Tcad-Silvaco 4, 2014 | 1 | 2014 |
| Simulation-Based Optimization of Barrier and Spacer Layers in InAlN/GaN HEMTs for Improved 2DEG Density A Douara, A Rabehi, M Guermoui, R Daha, IE Tibermacine Micro and Nanostructures, 207950, 2024 | | 2024 |
| Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor A Douara, A Rabehi, M Guermoui, R Daha, IE Tibermacine Physics of the Solid State 66 (6), 157-164, 2024 | | 2024 |
| Accurate parameter estimation of Au/GaN/GaAs schottky diode model using grey wolf optimization A Rabehi, A Douara, A Rabehi, H Helal, AM Younsi, M Amrani, IE Abbas, ... Revista Mexicana de Física 70 (2 Mar-Apr), 021004 1–8-021004 1–8, 2024 | | 2024 |
| Impact of AlN interlayer on the electronic and IV characteristics of In_ (0.17) Al_ (0.83) N/GaN HEMTs devices A Douara, A Rabehi, O Baitiche Revista Mexicana de Física 69 (3), 18, 2023 | | 2023 |
| Improved electrical characteristics of Al_ (x) Ga_ (1− x) N/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters A Douara, A Rabehi, O Baitiche, M Hamdani Revista Mexicana de Física 69 (4), 9, 2023 | | 2023 |
