| Magnetotransport properties of individual InAs nanowires S Dhara, HS Solanki, V Singh, A Narayanan, P Chaudhari, M Gokhale, ... Physical Review B—Condensed Matter and Materials Physics 79 (12), 121311, 2009 | 106 | 2009 |
| Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes S De, A Layek, A Raja, A Kadir, MR Gokhale, A Bhattacharya, S Dhar, ... Advanced Functional Materials 21 (20), 3828-3835, 2011 | 58 | 2011 |
| Tunable thermal conductivity in defect engineered nanowires at low temperatures S Dhara, HS Solanki, V Singh, S Sengupta, BA Chalke, A Dhar, ... Physical Review B—Condensed Matter and Materials Physics 84 (12), 121307, 2011 | 38 | 2011 |
| Growth, structural and optical characterization of wurtzite GaP nanowires CB Maliakkal, M Gokhale, J Parmar, RD Bapat, BA Chalke, S Ghosh, ... Nanotechnology 30 (25), 254002, 2019 | 26 | 2019 |
| Wide bandwidth nanowire electromechanics on insulating substrates at room temperature TS Abhilash, JP Mathew, S Sengupta, MR Gokhale, A Bhattacharya, ... Nano letters 12 (12), 6432-6435, 2012 | 20 | 2012 |
| Optimum hydrogen flowrates and membrane-electrode clamping pressure in hydrogen fuel cells with dual-serpentine flow channels P Castelino, A Shah, M Gokhale, A Jayarama, KV Suresh, P Fernandes, ... Materials Today: Proceedings 35, 412-416, 2021 | 12 | 2021 |
| Microstructure of InN epilayers deposited in a close-coupled showerhead reactor T Ganguli, A Kadir, M Gokhale, R Kumar, AP Shah, BM Arora, ... Journal of Crystal Growth 310 (23), 4942-4946, 2008 | 11 | 2008 |
| High-responsivity high-gain In/sub 0.53/Ga/sub 0.47/As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy A Majumdar, A Shah, M Gokhale, S Sen, S Ghosh, BM Arora, D Tsui IEEE journal of quantum electronics 41 (6), 872-878, 2005 | 9 | 2005 |
| Growth of high-quality GaN on (1 0 0) Ga2O3 substrates by facet-controlled MOVPE E Hossain, AA Rahman, M Gokhale, R Kulkarni, R Mondal, ... Journal of Crystal Growth 524, 125165, 2019 | 4 | 2019 |
| Revisiting the problem of crystallisation and melting of selenium D Kumar, S Gohil, M Gokhale, B Chalke, S Ghosh Journal of Physics: Condensed Matter 33 (29), 295402, 2021 | 1 | 2021 |
| Understanding the effect of nanowire orientation on time evolution of Raman spectra from laser irradiated InAs nanowire surface VK Gupta, AA Ingale, A Bhattacharya, M Gokhale, R Aggarwal, S Pal Nanotechnology 29 (42), 425709, 2018 | 1 | 2018 |
| Study of the microstructure in MOVPE grown InN epitaxial layers by high resolution x-ray diffraction T Ganguli, A Kadir, M Gokhale, R Kumar, AP Shah, BM Arora, ... 2007 International Workshop on Physics of Semiconductor Devices, 332-336, 2007 | 1 | 2007 |
| Light‐Emitting Diodes: Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes (Adv. Funct. Mater. 20/2011) S De, A Layek, A Raja, A Kadir, MR Gokhale, A Bhattacharya, S Dhar, ... Advanced Functional Materials 21 (20), 3827-3827, 2011 | | 2011 |
| Time-resolved THz-spectroscopy of InAs nano-wires SS Prabhu, A Deshpande, AU Chaubal, S Dhara, M Gokhale, ... 35th International Conference on Infrared, Millimeter, and Terahertz Waves, 1-1, 2010 | | 2010 |
| THz spectroscopy of InAs nanowires SS Prabhu, AU Chaubal, A Deshpande, S Dhara, M Gokhale, ... 2009 34th International Conference on Infrared, Millimeter, and Terahertz …, 2009 | | 2009 |
| QUANTUM ELECTRONICS PAPERS-Photodetectors-High-Responsivity High-Gain In0. 53Ga0. 47As-InP Quantum-Well Infrared Photodetectors Grown Using Metal-Organic Vapor Phase Epitaxy A Majumdar, A Shah, M Gokhale, S Sen, S Ghosh, BM Arora, D Tsui IEEE Journal of Quantum Electronics 41 (6), 872-878, 2005 | | 2005 |
| Reflectance Mapping of Semiconductor Distributed Bragg Reflectors J Bhattacharyya, N Satyan, S Ghosh, M Gokhale, BM Arora | | |
| Optical properties of InxGa1-xAs quantum Wells Grown by Molecular Beam Epitaxial Technique L Survase, S Mathew, M Gokhale | | |
