| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 1158 | 2018 |
| Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates L Cao, J Wang, G Harden, H Ye, R Stillwell, AJ Hoffman, P Fay Applied Physics Letters 112 (26), 2018 | 118 | 2018 |
| High voltage, high current GaN-on-GaN pn diodes with partially compensated edge termination J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay Applied Physics Letters 113 (2), 2018 | 109 | 2018 |
| Polarization-engineered III-nitride heterojunction tunnel field-effect transistors W Li, S Sharmin, H Ilatikhameneh, R Rahman, Y Lu, J Wang, X Yan, ... IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 1 …, 2015 | 103 | 2015 |
| Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching C Youtsey, R McCarthy, R Reddy, K Forghani, A Xie, E Beam, J Wang, ... physica status solidi (b) 254 (8), 1600774, 2017 | 44 | 2017 |
| Connection between Carbon Incorporation and Growth Rate for GaN Epitaxial Layers Prepared by OMVPE T Ciarkowski, N Allen, E Carlson, R McCarthy, C Youtsey, J Wang, P Fay, ... Materials 12 (15), 2455, 2019 | 32 | 2019 |
| High-voltage vertical GaN pn diodes by epitaxial liftoff from bulk GaN substrates J Wang, R McCarthy, C Youtsey, R Reddy, J Xie, E Beam, L Guido, L Cao, ... IEEE Electron Device Letters 39 (11), 1716-1719, 2018 | 24 | 2018 |
| Thin-film GaN Schottky diodes formed by epitaxial lift-off J Wang, C Youtsey, R McCarthy, R Reddy, N Allen, L Guido, J Xie, ... Applied Physics Letters 110 (17), 2017 | 23 | 2017 |
| Temperature dependence of electron and hole impact ionization coefficients in GaN L Cao, Z Zhu, G Harden, H Ye, J Wang, A Hoffman, PJ Fay IEEE Transactions on Electron Devices 68 (3), 1228-1234, 2021 | 22 | 2021 |
| High voltage vertical pn diodes with ion-implanted edge termination and sputtered SiNx passivation on GaN substrates J Wang, L Cao, J Xie, E Beam, R McCarthy, C Youtsey, P Fay 2017 IEEE International Electron Devices Meeting (IEDM), 9.6. 1-9.6. 4, 2017 | 19 | 2017 |
| Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation Y Cao, JW Pomeroy, MJ Uren, F Yang, J Wang, P Fay, M Kuball Applied Physics Letters 120 (24), 2022 | 11 | 2022 |
| First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC SM Islam, M Qi, B Song, K Nomoto, V Protasenko, J Wang, S Rouvimov, ... 2016 74th Annual Device Research Conference (DRC), 1-2, 2016 | 7 | 2016 |
| Ion-implanted triple-zone graded junction termination extension for vertical GaN pn diodes Y Duan, J Wang, Z Zhu, G Piao, K Ikenaga, H Tokunaga, S Koseki, ... Applied Physics Letters 122 (21), 2023 | 6 | 2023 |
| Avalanche multiplication noise in GaN p–n junctions grown on native GaN substrates L Cao, H Ye, J Wang, P Fay physica status solidi (b) 257 (2), 1900373, 2020 | 6 | 2020 |
| W-band GaN IMPATT diodes for high power millimeter-wave generation L Cao, H Ye, J Wang, P Fay 2019 IEEE National Aerospace and Electronics Conference (NAECON), 728-731, 2019 | 5 | 2019 |
| 1.7-kV vertical GaN pn diode with triple-zone graded junction termination extension formed by ion-implantation Y Duan, J Wang, A Xie, Z Zhu, P Fay e-Prime-Advances in Electrical Engineering, Electronics and Energy 6, 100330, 2023 | 4 | 2023 |
| Ferroelectric-gated GaN HEMTs for RF and mm-wave switch applications H Ye, C Wu, N Venkatesan, J Wang, Y Cao, A Xie, E Beam, P Fay 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 4 | 2022 |
| Ion‐Implant Isolated Vertical GaN p‐n Diodes Fabricated with Epitaxial Lift‐Off From GaN Substrates J Wang, R McCarthy, C Youtsey, R Reddy, J Xie, E Beam, L Guido, L Cao, ... physica status solidi (a) 216 (4), 1800652, 2019 | 4 | 2019 |
| Vertical GaN-on-GaN pn diodes with 10-A forward current and 1.6 kV breakdown voltage J Wang, L Cao, J Xie, E Beam, C Youtsey, R McfCarthy, L Guido, P Fay 2018 76th Device Research Conference (DRC), 1-2, 2018 | 4 | 2018 |
| Thin-Film GaN p-n Diodes and Epitaxial Lift-Off From GaN Substrates J Wang, C Youtsey, R McCarthy, R Reddy, N Allen, L Guido, A Xie, ... Int’l. Symp. Compound Semiconductor Week (CSW), B8.5, 2017 | 4 | 2017 |
