| Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors SF Chichibu, A Uedono, T Onuma, BA Haskell, A Chakraborty, T Koyama, ... Nature materials 5 (10), 810-816, 2006 | 834 | 2006 |
| High-power AlGaN/GaN HEMTs for ka-band applications T Palacios, A Chakraborty, S Rajan, C Poblenz, S Keller, SP DenBaars, ... IEEE Electron device letters 26 (11), 781-783, 2005 | 590 | 2005 |
| High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates Y Dora, A Chakraborty, L Mccarthy, S Keller, SP DenBaars, UK Mishra IEEE Electron Device Letters 27 (9), 713-715, 2006 | 556 | 2006 |
| Wafer level phosphor coating method and devices fabricated utilizing method A Chitnis, J Ibbetson, B Keller, DT Emerson, J Edmond, MJ Bergmann, ... US Patent 9,159,888, 2015 | 481 | 2015 |
| AlGaN/GaN high electron mobility transistors with InGaN back-barriers T Palacios, A Chakraborty, S Heikman, S Keller, SP DenBaars, UK Mishra IEEE Electron device letters 27 (1), 13-15, 2005 | 478 | 2005 |
| Wafer level phosphor coating method and devices fabricated utilizing method A Chitnis, J Ibbetson, A Chakraborty, EJ Tarsa, B Keller, J Seruto, Y Fu US Patent 9,024,349, 2015 | 460 | 2015 |
| Technique for the growth and fabrication of semipolar (Ga, A1, In, B) N thin films, heterostructures, and devices RM Farrell Jr, TJ Baker, A Chakraborty, BA Haskell, PM Pattison, ... US Patent 7,846,757, 2010 | 334 | 2010 |
| Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition A Chakraborty, BA Haskell, S Keller, JS Speck, SP DenBaars, ... US Patent 7,186,302, 2007 | 329 | 2007 |
| LONG WAVELENGTH NONPOLAR AND SEMIPOLAR (Al, Ga, In) N BASED LASER DIODES A Chakraborty, YD Lin, S Nakamura, SP DenBaars US Patent App. 12/795,360, 2010 | 283 | 2010 |
| Nonpolar InGaN∕ GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak A Chakraborty, BA Haskell, S Keller, JS Speck, SP DenBaars, ... Applied Physics Letters 85 (22), 5143-5145, 2004 | 278 | 2004 |
| Tapered Horizontal Growth Chamber JW Raring, A Chakraborty, M Coulter US Patent App. 13/046,565, 2011 | 253 | 2011 |
| Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates A Chakraborty, BA Haskell, S Keller, JS Speck, SP Denbaars, ... Japanese Journal of Applied Physics 44 (1L), L173, 2005 | 253 | 2005 |
| Influence of the dynamic access resistance in the g/sub m/and f/sub T/linearity of AlGaN/GaN HEMTs T Palacios, S Rajan, A Chakraborty, S Heikman, S Keller, SP DenBaars, ... IEEE Transactions on Electron Devices 52 (10), 2117-2123, 2005 | 252 | 2005 |
| Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes A Chakraborty, B Keller US Patent 7,999,283, 2011 | 238 | 2011 |
| Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices J Raring, A Chakraborty, C Poblenz US Patent App. 12/859,153, 2011 | 235 | 2011 |
| High-performance e-mode algan/gan hemts T Palacios, CS Suh, A Chakraborty, S Keller, SP DenBaars, UK Mishra IEEE Electron Device Letters 27 (6), 428-430, 2006 | 230 | 2006 |
| Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition MD Craven, F Wu, A Chakraborty, B Imer, UK Mishra, SP DenBaars, ... Applied Physics Letters 84 (8), 1281-1283, 2004 | 174 | 2004 |
| Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask A Chakraborty, KC Kim, F Wu, JS Speck, SP DenBaars, UK Mishra Applied physics letters 89 (4), 2006 | 162 | 2006 |
| Encapsulation for phosphor-converted white light emitting diode A Chakraborty US Patent 9,287,469, 2016 | 160 | 2016 |
| Bulk GaN based violet light-emitting diodes with high efficiency at very high current density MJ Cich, RI Aldaz, A Chakraborty, A David, MJ Grundmann, A Tyagi, ... Applied Physics Letters 101 (22), 2012 | 145 | 2012 |
